Amorphization of SiO2 Thin Films by Using 200 MeV Ag15+ Ions
Effect of swift heavy ions (SHI) on low-k SiO 2 thin films has been investigated. SiO 2 thin films were deposited on pre-cleaned p-Si substrate by using sol-gel spin coating technique. Further, deposited films were annealed at 400 ∘ C to remove structural irregularities. Prepared samples were irradi...
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| Veröffentlicht in: | SILICON 2019-04, Vol.11 (2), p.1017-1021 |
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| creator | Gaikwad, Anil Mhaisagar, Yogesh Gupta, Swati Joshi, Bhavana Asokan, Kandasami Mahajan, Ashok |
| description | Effect of swift heavy ions (SHI) on low-k SiO
2
thin films has been investigated. SiO
2
thin films were deposited on pre-cleaned p-Si substrate by using sol-gel spin coating technique. Further, deposited films were annealed at 400
∘
C to remove structural irregularities. Prepared samples were irradiated with 200 MeV Ag
15+
ions at different ion fluence such as 5 × 10
11
, 1 × 10
12
and 5 × 10
12
ions/cm
2
. Deposition of SiO
2
was confirmed by using EDAX and FTIR spectroscopy. Increase in ion fluence increases the RMS roughness from 1.49 to 7.79 nm. The transformation of deposited material from polycrystalline to amorphous nature was confirmed from XRD spectra. Increase in SHI fluence decreases the grain size from 181.3 to 74.1 nm for pristine and sample irradiated at 5 × 10
11
ions/cm
2
. Whereas, for sample irradiated with 5 × 10
11
ions/cm
2
fluence doesn’t show crystalline peak at (011). It is observed that SHI irradiation leads to grain agglomeration with decrease in crystal size at higher fluence. Further, conductivity of the samples under study was observed to be decreased with increase in ion fluence. Thus, it is demonstrated that the surface and structural properties of low-k silica thin films can be tailored by controlling the SHI fluence. |
| doi_str_mv | 10.1007/s12633-018-9882-4 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2920376248</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2920376248</sourcerecordid><originalsourceid>FETCH-LOGICAL-c246t-5b00cb49c283d1d9b7af920821566e566fd509c0a5c3be70017038b9a9cd54f63</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMoWGp_gLeAR4lOkt18gJdSbC1UerAVb2E3m223tJuatIf6601Z0ZMDw8zh_YAHoVsKDxRAPkbKBOcEqCJaKUayC9SjSgqiNVWXvz98XKNBjBtIw5lUQvfQ03Dnw37dfBWHxrfY1_itmTO8WDctHjfbXcTlCS9j064wA8Cv7h0PVzS_x1Pfxht0VRfb6AY_t4-W4-fF6IXM5pPpaDgjlmXiQPISwJaZtkzxila6lEWtGShGcyFc2rrKQVsocstLJwGoBK5KXWhb5VkteB_ddbn74D-PLh7Mxh9DmyoNS0FcCpappKKdygYfY3C12YdmV4SToWDOnEzHySRO5szJZMnDOk9M2nblwl_y_6ZvmnRmeQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2920376248</pqid></control><display><type>article</type><title>Amorphization of SiO2 Thin Films by Using 200 MeV Ag15+ Ions</title><source>ProQuest Central UK/Ireland</source><source>SpringerLink Journals - AutoHoldings</source><source>ProQuest Central</source><creator>Gaikwad, Anil ; Mhaisagar, Yogesh ; Gupta, Swati ; Joshi, Bhavana ; Asokan, Kandasami ; Mahajan, Ashok</creator><creatorcontrib>Gaikwad, Anil ; Mhaisagar, Yogesh ; Gupta, Swati ; Joshi, Bhavana ; Asokan, Kandasami ; Mahajan, Ashok</creatorcontrib><description>Effect of swift heavy ions (SHI) on low-k SiO
2
thin films has been investigated. SiO
2
thin films were deposited on pre-cleaned p-Si substrate by using sol-gel spin coating technique. Further, deposited films were annealed at 400
∘
C to remove structural irregularities. Prepared samples were irradiated with 200 MeV Ag
15+
ions at different ion fluence such as 5 × 10
11
, 1 × 10
12
and 5 × 10
12
ions/cm
2
. Deposition of SiO
2
was confirmed by using EDAX and FTIR spectroscopy. Increase in ion fluence increases the RMS roughness from 1.49 to 7.79 nm. The transformation of deposited material from polycrystalline to amorphous nature was confirmed from XRD spectra. Increase in SHI fluence decreases the grain size from 181.3 to 74.1 nm for pristine and sample irradiated at 5 × 10
11
ions/cm
2
. Whereas, for sample irradiated with 5 × 10
11
ions/cm
2
fluence doesn’t show crystalline peak at (011). It is observed that SHI irradiation leads to grain agglomeration with decrease in crystal size at higher fluence. Further, conductivity of the samples under study was observed to be decreased with increase in ion fluence. Thus, it is demonstrated that the surface and structural properties of low-k silica thin films can be tailored by controlling the SHI fluence.</description><identifier>ISSN: 1876-990X</identifier><identifier>EISSN: 1876-9918</identifier><identifier>DOI: 10.1007/s12633-018-9882-4</identifier><language>eng</language><publisher>Dordrecht: Springer Netherlands</publisher><subject>Amorphization ; Amorphous materials ; Chemistry ; Chemistry and Materials Science ; Environmental Chemistry ; Fluence ; Grain size ; Heavy ions ; Inorganic Chemistry ; Irradiation ; Lasers ; Materials Science ; Optical Devices ; Optics ; Original Paper ; Photonics ; Polymer Sciences ; Silicon dioxide ; Silicon substrates ; Sol-gel processes ; Spectrum analysis ; Spin coating ; Thin films</subject><ispartof>SILICON, 2019-04, Vol.11 (2), p.1017-1021</ispartof><rights>Springer Science+Business Media B.V., part of Springer Nature 2018</rights><rights>Springer Science+Business Media B.V., part of Springer Nature 2018.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c246t-5b00cb49c283d1d9b7af920821566e566fd509c0a5c3be70017038b9a9cd54f63</citedby><cites>FETCH-LOGICAL-c246t-5b00cb49c283d1d9b7af920821566e566fd509c0a5c3be70017038b9a9cd54f63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12633-018-9882-4$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2920376248?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,780,784,21388,27924,27925,33744,41488,42557,43805,51319,64385,64389,72341</link.rule.ids></links><search><creatorcontrib>Gaikwad, Anil</creatorcontrib><creatorcontrib>Mhaisagar, Yogesh</creatorcontrib><creatorcontrib>Gupta, Swati</creatorcontrib><creatorcontrib>Joshi, Bhavana</creatorcontrib><creatorcontrib>Asokan, Kandasami</creatorcontrib><creatorcontrib>Mahajan, Ashok</creatorcontrib><title>Amorphization of SiO2 Thin Films by Using 200 MeV Ag15+ Ions</title><title>SILICON</title><addtitle>Silicon</addtitle><description>Effect of swift heavy ions (SHI) on low-k SiO
2
thin films has been investigated. SiO
2
thin films were deposited on pre-cleaned p-Si substrate by using sol-gel spin coating technique. Further, deposited films were annealed at 400
∘
C to remove structural irregularities. Prepared samples were irradiated with 200 MeV Ag
15+
ions at different ion fluence such as 5 × 10
11
, 1 × 10
12
and 5 × 10
12
ions/cm
2
. Deposition of SiO
2
was confirmed by using EDAX and FTIR spectroscopy. Increase in ion fluence increases the RMS roughness from 1.49 to 7.79 nm. The transformation of deposited material from polycrystalline to amorphous nature was confirmed from XRD spectra. Increase in SHI fluence decreases the grain size from 181.3 to 74.1 nm for pristine and sample irradiated at 5 × 10
11
ions/cm
2
. Whereas, for sample irradiated with 5 × 10
11
ions/cm
2
fluence doesn’t show crystalline peak at (011). It is observed that SHI irradiation leads to grain agglomeration with decrease in crystal size at higher fluence. Further, conductivity of the samples under study was observed to be decreased with increase in ion fluence. Thus, it is demonstrated that the surface and structural properties of low-k silica thin films can be tailored by controlling the SHI fluence.</description><subject>Amorphization</subject><subject>Amorphous materials</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Environmental Chemistry</subject><subject>Fluence</subject><subject>Grain size</subject><subject>Heavy ions</subject><subject>Inorganic Chemistry</subject><subject>Irradiation</subject><subject>Lasers</subject><subject>Materials Science</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Original Paper</subject><subject>Photonics</subject><subject>Polymer Sciences</subject><subject>Silicon dioxide</subject><subject>Silicon substrates</subject><subject>Sol-gel processes</subject><subject>Spectrum analysis</subject><subject>Spin coating</subject><subject>Thin films</subject><issn>1876-990X</issn><issn>1876-9918</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1kE1LAzEQhoMoWGp_gLeAR4lOkt18gJdSbC1UerAVb2E3m223tJuatIf6601Z0ZMDw8zh_YAHoVsKDxRAPkbKBOcEqCJaKUayC9SjSgqiNVWXvz98XKNBjBtIw5lUQvfQ03Dnw37dfBWHxrfY1_itmTO8WDctHjfbXcTlCS9j064wA8Cv7h0PVzS_x1Pfxht0VRfb6AY_t4-W4-fF6IXM5pPpaDgjlmXiQPISwJaZtkzxila6lEWtGShGcyFc2rrKQVsocstLJwGoBK5KXWhb5VkteB_ddbn74D-PLh7Mxh9DmyoNS0FcCpappKKdygYfY3C12YdmV4SToWDOnEzHySRO5szJZMnDOk9M2nblwl_y_6ZvmnRmeQ</recordid><startdate>20190401</startdate><enddate>20190401</enddate><creator>Gaikwad, Anil</creator><creator>Mhaisagar, Yogesh</creator><creator>Gupta, Swati</creator><creator>Joshi, Bhavana</creator><creator>Asokan, Kandasami</creator><creator>Mahajan, Ashok</creator><general>Springer Netherlands</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope></search><sort><creationdate>20190401</creationdate><title>Amorphization of SiO2 Thin Films by Using 200 MeV Ag15+ Ions</title><author>Gaikwad, Anil ; Mhaisagar, Yogesh ; Gupta, Swati ; Joshi, Bhavana ; Asokan, Kandasami ; Mahajan, Ashok</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c246t-5b00cb49c283d1d9b7af920821566e566fd509c0a5c3be70017038b9a9cd54f63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Amorphization</topic><topic>Amorphous materials</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Environmental Chemistry</topic><topic>Fluence</topic><topic>Grain size</topic><topic>Heavy ions</topic><topic>Inorganic Chemistry</topic><topic>Irradiation</topic><topic>Lasers</topic><topic>Materials Science</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Original Paper</topic><topic>Photonics</topic><topic>Polymer Sciences</topic><topic>Silicon dioxide</topic><topic>Silicon substrates</topic><topic>Sol-gel processes</topic><topic>Spectrum analysis</topic><topic>Spin coating</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gaikwad, Anil</creatorcontrib><creatorcontrib>Mhaisagar, Yogesh</creatorcontrib><creatorcontrib>Gupta, Swati</creatorcontrib><creatorcontrib>Joshi, Bhavana</creatorcontrib><creatorcontrib>Asokan, Kandasami</creatorcontrib><creatorcontrib>Mahajan, Ashok</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><jtitle>SILICON</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gaikwad, Anil</au><au>Mhaisagar, Yogesh</au><au>Gupta, Swati</au><au>Joshi, Bhavana</au><au>Asokan, Kandasami</au><au>Mahajan, Ashok</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Amorphization of SiO2 Thin Films by Using 200 MeV Ag15+ Ions</atitle><jtitle>SILICON</jtitle><stitle>Silicon</stitle><date>2019-04-01</date><risdate>2019</risdate><volume>11</volume><issue>2</issue><spage>1017</spage><epage>1021</epage><pages>1017-1021</pages><issn>1876-990X</issn><eissn>1876-9918</eissn><abstract>Effect of swift heavy ions (SHI) on low-k SiO
2
thin films has been investigated. SiO
2
thin films were deposited on pre-cleaned p-Si substrate by using sol-gel spin coating technique. Further, deposited films were annealed at 400
∘
C to remove structural irregularities. Prepared samples were irradiated with 200 MeV Ag
15+
ions at different ion fluence such as 5 × 10
11
, 1 × 10
12
and 5 × 10
12
ions/cm
2
. Deposition of SiO
2
was confirmed by using EDAX and FTIR spectroscopy. Increase in ion fluence increases the RMS roughness from 1.49 to 7.79 nm. The transformation of deposited material from polycrystalline to amorphous nature was confirmed from XRD spectra. Increase in SHI fluence decreases the grain size from 181.3 to 74.1 nm for pristine and sample irradiated at 5 × 10
11
ions/cm
2
. Whereas, for sample irradiated with 5 × 10
11
ions/cm
2
fluence doesn’t show crystalline peak at (011). It is observed that SHI irradiation leads to grain agglomeration with decrease in crystal size at higher fluence. Further, conductivity of the samples under study was observed to be decreased with increase in ion fluence. Thus, it is demonstrated that the surface and structural properties of low-k silica thin films can be tailored by controlling the SHI fluence.</abstract><cop>Dordrecht</cop><pub>Springer Netherlands</pub><doi>10.1007/s12633-018-9882-4</doi><tpages>5</tpages></addata></record> |
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| subjects | Amorphization Amorphous materials Chemistry Chemistry and Materials Science Environmental Chemistry Fluence Grain size Heavy ions Inorganic Chemistry Irradiation Lasers Materials Science Optical Devices Optics Original Paper Photonics Polymer Sciences Silicon dioxide Silicon substrates Sol-gel processes Spectrum analysis Spin coating Thin films |
| title | Amorphization of SiO2 Thin Films by Using 200 MeV Ag15+ Ions |
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