Effect of SF6 Plasma Etching on the Optical, Morphological and Structural Properties of SiC Films
Amorphous silicon carbide (a-SiC) films hold promise for microelectronic and MEMS devices. Prior to their use in microfabricated devices, these films undergo plasma etching. This study investigates reactive ion etching (RIE) of sputtered a-SiC films on Si (100) substrates using sulfur hexafluoride (...
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| Veröffentlicht in: | SILICON 2023-12, Vol.15 (18), p.7745-7754 |
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| creator | de Almeida Maribondo Galvão, Nierlly Karinni Godoy Junior, Armstrong de Jesus Pereira, André Luis Martins, Gislene Valdete Pessoa, Rodrigo Sávio Maciel, Homero Santiago Fraga, Mariana Amorim |
| description | Amorphous silicon carbide (a-SiC) films hold promise for microelectronic and MEMS devices. Prior to their use in microfabricated devices, these films undergo plasma etching. This study investigates reactive ion etching (RIE) of sputtered a-SiC films on Si (100) substrates using sulfur hexafluoride (SF
6
) gas. The focus is on the impact of RF power on the thickness, structure, chemistry, and morphology of the SiC film. Grazing Incidence X-ray Diffraction (GIXRD) analysis of the etched samples indicates crystalline SiC formation at low temperatures. Surface morphology analysis using Field Emission Scanning Electron Microscopy (FESEM) confirms the GIXRD results. The RIE process unintentionally induces crystallization of a-SiC films, but adjusting etching process parameters allows control over film crystallinity. |
| doi_str_mv | 10.1007/s12633-023-02618-w |
| format | Article |
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6
) gas. The focus is on the impact of RF power on the thickness, structure, chemistry, and morphology of the SiC film. Grazing Incidence X-ray Diffraction (GIXRD) analysis of the etched samples indicates crystalline SiC formation at low temperatures. Surface morphology analysis using Field Emission Scanning Electron Microscopy (FESEM) confirms the GIXRD results. The RIE process unintentionally induces crystallization of a-SiC films, but adjusting etching process parameters allows control over film crystallinity.</description><identifier>ISSN: 1876-990X</identifier><identifier>EISSN: 1876-9918</identifier><identifier>DOI: 10.1007/s12633-023-02618-w</identifier><language>eng</language><publisher>Dordrecht: Springer Netherlands</publisher><subject>Amorphous materials ; Amorphous silicon ; Carbon ; Chemistry ; Chemistry and Materials Science ; Crystallization ; Emission analysis ; Environmental Chemistry ; Field emission microscopy ; Fluorine ; Gases ; Inorganic Chemistry ; Lasers ; Low temperature ; Materials Science ; Microelectromechanical systems ; Microscopy ; Morphology ; Optical Devices ; Optical properties ; Optics ; Photonics ; Plasma etching ; Polymer Sciences ; Power supply ; Process parameters ; Reactive ion etching ; Silicon carbide ; Silicon substrates ; Silicon wafers ; Sulfur hexafluoride ; Thickness</subject><ispartof>SILICON, 2023-12, Vol.15 (18), p.7745-7754</ispartof><rights>The Author(s), under exclusive licence to Springer Nature B.V. 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-8c77447b92440f515d9f6bbb3606f6f1a10522dae6d8aaf572cd0533b98da4eb3</citedby><cites>FETCH-LOGICAL-c319t-8c77447b92440f515d9f6bbb3606f6f1a10522dae6d8aaf572cd0533b98da4eb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12633-023-02618-w$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2920240241?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,777,781,21369,27905,27906,33725,41469,42538,43786,51300,64364,64368,72218</link.rule.ids></links><search><creatorcontrib>de Almeida Maribondo Galvão, Nierlly Karinni</creatorcontrib><creatorcontrib>Godoy Junior, Armstrong</creatorcontrib><creatorcontrib>de Jesus Pereira, André Luis</creatorcontrib><creatorcontrib>Martins, Gislene Valdete</creatorcontrib><creatorcontrib>Pessoa, Rodrigo Sávio</creatorcontrib><creatorcontrib>Maciel, Homero Santiago</creatorcontrib><creatorcontrib>Fraga, Mariana Amorim</creatorcontrib><title>Effect of SF6 Plasma Etching on the Optical, Morphological and Structural Properties of SiC Films</title><title>SILICON</title><addtitle>Silicon</addtitle><description>Amorphous silicon carbide (a-SiC) films hold promise for microelectronic and MEMS devices. Prior to their use in microfabricated devices, these films undergo plasma etching. This study investigates reactive ion etching (RIE) of sputtered a-SiC films on Si (100) substrates using sulfur hexafluoride (SF
6
) gas. The focus is on the impact of RF power on the thickness, structure, chemistry, and morphology of the SiC film. Grazing Incidence X-ray Diffraction (GIXRD) analysis of the etched samples indicates crystalline SiC formation at low temperatures. Surface morphology analysis using Field Emission Scanning Electron Microscopy (FESEM) confirms the GIXRD results. The RIE process unintentionally induces crystallization of a-SiC films, but adjusting etching process parameters allows control over film crystallinity.</description><subject>Amorphous materials</subject><subject>Amorphous silicon</subject><subject>Carbon</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Crystallization</subject><subject>Emission analysis</subject><subject>Environmental Chemistry</subject><subject>Field emission microscopy</subject><subject>Fluorine</subject><subject>Gases</subject><subject>Inorganic Chemistry</subject><subject>Lasers</subject><subject>Low temperature</subject><subject>Materials Science</subject><subject>Microelectromechanical systems</subject><subject>Microscopy</subject><subject>Morphology</subject><subject>Optical Devices</subject><subject>Optical properties</subject><subject>Optics</subject><subject>Photonics</subject><subject>Plasma etching</subject><subject>Polymer Sciences</subject><subject>Power supply</subject><subject>Process parameters</subject><subject>Reactive ion etching</subject><subject>Silicon carbide</subject><subject>Silicon substrates</subject><subject>Silicon wafers</subject><subject>Sulfur hexafluoride</subject><subject>Thickness</subject><issn>1876-990X</issn><issn>1876-9918</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9UF1LwzAUDaLgmPsDPgV8tZqPNm0eZWxOmGwwBd9CmiZbR9fUJGX4781W0Tcv93LvgXPOhQPALUYPGKH80WPCKE0QOQ3DRXK8ACNc5CzhHBeXvzf6uAYT7_coFiV5wfgIyJkxWgVoDdzMGVw30h8knAW1q9sttC0MOw1XXaiVbO7hq3XdzjZ2e4JQthXcBNer0LsI18522oVa-7NbPYXzujn4G3BlZOP15GePwft89jZdJMvV88v0aZkoinlICpXnaZqXnKQpMhnOKm5YWZaUIWaYwRKjjJBKalYVUposJ6pCGaUlLyqZ6pKOwd3g2zn72WsfxN72ro0vBeEEkTQ2jiwysJSz3jttROfqg3RfAiNxSlMMaYqYpjinKY5RRAeRj-R2q92f9T-qbxCEd10</recordid><startdate>20231201</startdate><enddate>20231201</enddate><creator>de Almeida Maribondo Galvão, Nierlly Karinni</creator><creator>Godoy Junior, Armstrong</creator><creator>de Jesus Pereira, André Luis</creator><creator>Martins, Gislene Valdete</creator><creator>Pessoa, Rodrigo Sávio</creator><creator>Maciel, Homero Santiago</creator><creator>Fraga, Mariana Amorim</creator><general>Springer Netherlands</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope></search><sort><creationdate>20231201</creationdate><title>Effect of SF6 Plasma Etching on the Optical, Morphological and Structural Properties of SiC Films</title><author>de Almeida Maribondo Galvão, Nierlly Karinni ; Godoy Junior, Armstrong ; de Jesus Pereira, André Luis ; Martins, Gislene Valdete ; Pessoa, Rodrigo Sávio ; Maciel, Homero Santiago ; Fraga, Mariana Amorim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-8c77447b92440f515d9f6bbb3606f6f1a10522dae6d8aaf572cd0533b98da4eb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Amorphous materials</topic><topic>Amorphous silicon</topic><topic>Carbon</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Crystallization</topic><topic>Emission analysis</topic><topic>Environmental Chemistry</topic><topic>Field emission microscopy</topic><topic>Fluorine</topic><topic>Gases</topic><topic>Inorganic Chemistry</topic><topic>Lasers</topic><topic>Low temperature</topic><topic>Materials Science</topic><topic>Microelectromechanical systems</topic><topic>Microscopy</topic><topic>Morphology</topic><topic>Optical Devices</topic><topic>Optical properties</topic><topic>Optics</topic><topic>Photonics</topic><topic>Plasma etching</topic><topic>Polymer Sciences</topic><topic>Power supply</topic><topic>Process parameters</topic><topic>Reactive ion etching</topic><topic>Silicon carbide</topic><topic>Silicon substrates</topic><topic>Silicon wafers</topic><topic>Sulfur hexafluoride</topic><topic>Thickness</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>de Almeida Maribondo Galvão, Nierlly Karinni</creatorcontrib><creatorcontrib>Godoy Junior, Armstrong</creatorcontrib><creatorcontrib>de Jesus Pereira, André Luis</creatorcontrib><creatorcontrib>Martins, Gislene Valdete</creatorcontrib><creatorcontrib>Pessoa, Rodrigo Sávio</creatorcontrib><creatorcontrib>Maciel, Homero Santiago</creatorcontrib><creatorcontrib>Fraga, Mariana Amorim</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><jtitle>SILICON</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>de Almeida Maribondo Galvão, Nierlly Karinni</au><au>Godoy Junior, Armstrong</au><au>de Jesus Pereira, André Luis</au><au>Martins, Gislene Valdete</au><au>Pessoa, Rodrigo Sávio</au><au>Maciel, Homero Santiago</au><au>Fraga, Mariana Amorim</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of SF6 Plasma Etching on the Optical, Morphological and Structural Properties of SiC Films</atitle><jtitle>SILICON</jtitle><stitle>Silicon</stitle><date>2023-12-01</date><risdate>2023</risdate><volume>15</volume><issue>18</issue><spage>7745</spage><epage>7754</epage><pages>7745-7754</pages><issn>1876-990X</issn><eissn>1876-9918</eissn><abstract>Amorphous silicon carbide (a-SiC) films hold promise for microelectronic and MEMS devices. Prior to their use in microfabricated devices, these films undergo plasma etching. This study investigates reactive ion etching (RIE) of sputtered a-SiC films on Si (100) substrates using sulfur hexafluoride (SF
6
) gas. The focus is on the impact of RF power on the thickness, structure, chemistry, and morphology of the SiC film. Grazing Incidence X-ray Diffraction (GIXRD) analysis of the etched samples indicates crystalline SiC formation at low temperatures. Surface morphology analysis using Field Emission Scanning Electron Microscopy (FESEM) confirms the GIXRD results. The RIE process unintentionally induces crystallization of a-SiC films, but adjusting etching process parameters allows control over film crystallinity.</abstract><cop>Dordrecht</cop><pub>Springer Netherlands</pub><doi>10.1007/s12633-023-02618-w</doi><tpages>10</tpages></addata></record> |
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| subjects | Amorphous materials Amorphous silicon Carbon Chemistry Chemistry and Materials Science Crystallization Emission analysis Environmental Chemistry Field emission microscopy Fluorine Gases Inorganic Chemistry Lasers Low temperature Materials Science Microelectromechanical systems Microscopy Morphology Optical Devices Optical properties Optics Photonics Plasma etching Polymer Sciences Power supply Process parameters Reactive ion etching Silicon carbide Silicon substrates Silicon wafers Sulfur hexafluoride Thickness |
| title | Effect of SF6 Plasma Etching on the Optical, Morphological and Structural Properties of SiC Films |
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