Enhanced Efficiency of Graphene-Silicon Schottky Junction Solar Cell through Pyramid Arrays Texturation

Graphene/silicon (Gr/Si) Schottky junction solar cells have attracted extensive research interest due to their simple structure and potential low-cost. Surface texturing is an important part of high-efficiency solar cells. In this paper, the effects of TMAH concentration, IPA concentration and etching time on the structure and anti-reflection ability of silicon pyramid array (SiPa) were systematically studied to obtain uniform and reliable pyramid array. Under the optimized conditions, a large scale SiPa with uniform size distribution was obtained and applied to Gr/Si solar cells. The results show that the TMAH etched SiPa has a better Schottky junction contact between graphene and the SiPa surface, and the SiPa can further improves the ability of collecting photogenerated carriers. Compared with Gr/Si solar cells, the power conversion efficiency (PCE) of Gr/SiPa device is 1.66 times higher than that of Gr/Si solar cells. Finally, Gr/SiPa devices with PCE of 5.67% is successfully obtained by HNO 3 doping. This work proposes a new strategy for TMAH etching SiPa to improve the performance of Gr/Si solar cells. Highlights The effects of TMAH concentration, IPA concentration and etching time on silicon pyramid structure were studied. Uniform silicon pyramid arrays with low reflectivity were prepared. The results show that the TMAH etched SiPa has a better Schottky junction contact between graphene and the SiPa surface. The PCE of Gr/SiPa solar cells could reach up to 5.67%.