Synthesis and investigation of silicon carbide nanowires by HFCVD method

Silicon carbide (SiC) nanowire has been fabricated by hot filament chemical vapour deposition (HFCVD) mechanism in the temperature range of 600–800°C. Synthesis is performed under vacuum in the atmospheres of hexamethyldisiloxane/alcohol (HMDSO/C 2 H 5 OH) vapour and hydrogen (H 2 ) gas mixture. In this research dependence of SiC properties on temperature is discussed. Morphology and structural properties of SiC nanowire grown on glass substrate were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), energy diffraction spectrometer (EDX), and four-point probe (4PP). Also Mountains Map Premium (64-bit version) software is used to investigate morphological features of samples. In this context, the analysis of the motifs, depth histograms, statistical parameters, texture direction, fractal, and the peak count histograms of the nanostructure surface of samples are carried out. According to analysis, SiC films had a good crystal quality without defects or low residual stress. We found that increasing substrate temperature increases silicon and oxygen doping amount. We also found that electrical resistivity and surface roughness increased by increasing substrate temperature. This study showed that SiC nanowires with high density grew on the free catalyst glass substrate, and the alignment of SiC nanowires decreased.