Theoretical study of built-in-polarization effect on relaxation time and mean free path of phonons in AlxGa1−xN alloy
In this article we have investigated theoretically the effect of built-in-polarization field on various phonon scattering mechanisms in Al x Ga 1−x N alloy. The built-in-polarization field of Al x Ga 1−x N modifies the elastic constant, group velocity of phonons and Debye temperature. As a result, v...
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| Veröffentlicht in: | Bulletin of materials science 2016-12, Vol.39 (7), p.1835-1841 |
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| creator | SAHOO, B K PANSARI, A |
| description | In this article we have investigated theoretically the effect of built-in-polarization field on various phonon scattering mechanisms in Al
x
Ga
1−x
N alloy. The built-in-polarization field of Al
x
Ga
1−x
N modifies the elastic constant, group velocity of phonons and Debye temperature. As a result, various phonon scattering mechanisms are changed. Important phonon scattering mechanisms such as normal scattering, Umklapp scattering, point defect scattering, dislocation scattering and phonon–electron scattering processes have been considered in the computation. The combined relaxation time due to above-mentioned scattering mechanisms has also been computed as a function of phonon frequency for various Al compositions at room temperature. It is found that combined relaxation time is enhanced due to built-in-polarization effect and makes phonon mean free path longer, which is required for higher optical, electrical and thermal transport processes. The result can be used to determine the effect of built-in-polarization field on optical and thermal properties of Al
x
Ga
1−x
N and will be useful, particularly, for improvement of thermoelectric performance of Al
x
Ga
1−x
N alloy through polarization engineering. |
| doi_str_mv | 10.1007/s12034-016-1319-3 |
| format | Article |
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x
Ga
1−x
N alloy. The built-in-polarization field of Al
x
Ga
1−x
N modifies the elastic constant, group velocity of phonons and Debye temperature. As a result, various phonon scattering mechanisms are changed. Important phonon scattering mechanisms such as normal scattering, Umklapp scattering, point defect scattering, dislocation scattering and phonon–electron scattering processes have been considered in the computation. The combined relaxation time due to above-mentioned scattering mechanisms has also been computed as a function of phonon frequency for various Al compositions at room temperature. It is found that combined relaxation time is enhanced due to built-in-polarization effect and makes phonon mean free path longer, which is required for higher optical, electrical and thermal transport processes. The result can be used to determine the effect of built-in-polarization field on optical and thermal properties of Al
x
Ga
1−x
N and will be useful, particularly, for improvement of thermoelectric performance of Al
x
Ga
1−x
N alloy through polarization engineering.</description><identifier>ISSN: 0250-4707</identifier><identifier>EISSN: 0973-7669</identifier><identifier>DOI: 10.1007/s12034-016-1319-3</identifier><language>eng</language><publisher>Bangalore, India: Indian Academy of Sciences</publisher><subject>Alloys ; Chemistry and Materials Science ; Debye temperature ; Efficiency ; Elastic properties ; Electric fields ; Engineering ; Group velocity ; Heat conductivity ; Influence ; Interfaces ; Lasers ; Light emitting diodes ; Materials Science ; Mean free path ; Microwave communications ; Optical properties ; Phonons ; Point defects ; Polarization ; Relaxation time ; Room temperature ; Scattering ; Semiconductors ; Thermodynamic properties ; Transistors ; Velocity</subject><ispartof>Bulletin of materials science, 2016-12, Vol.39 (7), p.1835-1841</ispartof><rights>Indian Academy of Sciences 2016</rights><rights>Indian Academy of Sciences 2016.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/2919967059/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2919967059?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,780,784,21388,27924,27925,33744,41488,42557,43805,51319,64385,64389,72469,74302</link.rule.ids></links><search><creatorcontrib>SAHOO, B K</creatorcontrib><creatorcontrib>PANSARI, A</creatorcontrib><title>Theoretical study of built-in-polarization effect on relaxation time and mean free path of phonons in AlxGa1−xN alloy</title><title>Bulletin of materials science</title><addtitle>Bull Mater Sci</addtitle><description>In this article we have investigated theoretically the effect of built-in-polarization field on various phonon scattering mechanisms in Al
x
Ga
1−x
N alloy. The built-in-polarization field of Al
x
Ga
1−x
N modifies the elastic constant, group velocity of phonons and Debye temperature. As a result, various phonon scattering mechanisms are changed. Important phonon scattering mechanisms such as normal scattering, Umklapp scattering, point defect scattering, dislocation scattering and phonon–electron scattering processes have been considered in the computation. The combined relaxation time due to above-mentioned scattering mechanisms has also been computed as a function of phonon frequency for various Al compositions at room temperature. It is found that combined relaxation time is enhanced due to built-in-polarization effect and makes phonon mean free path longer, which is required for higher optical, electrical and thermal transport processes. The result can be used to determine the effect of built-in-polarization field on optical and thermal properties of Al
x
Ga
1−x
N and will be useful, particularly, for improvement of thermoelectric performance of Al
x
Ga
1−x
N alloy through polarization engineering.</description><subject>Alloys</subject><subject>Chemistry and Materials Science</subject><subject>Debye temperature</subject><subject>Efficiency</subject><subject>Elastic properties</subject><subject>Electric fields</subject><subject>Engineering</subject><subject>Group velocity</subject><subject>Heat conductivity</subject><subject>Influence</subject><subject>Interfaces</subject><subject>Lasers</subject><subject>Light emitting diodes</subject><subject>Materials Science</subject><subject>Mean free path</subject><subject>Microwave communications</subject><subject>Optical properties</subject><subject>Phonons</subject><subject>Point defects</subject><subject>Polarization</subject><subject>Relaxation time</subject><subject>Room temperature</subject><subject>Scattering</subject><subject>Semiconductors</subject><subject>Thermodynamic properties</subject><subject>Transistors</subject><subject>Velocity</subject><issn>0250-4707</issn><issn>0973-7669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpFkEFOwzAQRSMEEqVwAHaWWBs8dhLHy6qCglTBpqwjJxlTV6kdHEe0nIA1R-QkpCoSq_kaPf3RvCS5BnYLjMm7HjgTKWWQUxCgqDhJJkxJQWWeq9Mx84zRVDJ5nlz0_YYxUGkKk-RjtUYfMNpat6SPQ7Mn3pBqsG2k1tHOtzrYTx2tdwSNwTqSMQVs9e64jHaLRLuGbFE7YgIi6XRcH1q6tXfe9cQ6Mmt3Cw0_X9-7Z6Lb1u8vkzOj2x6v_uY0eX24X80f6fJl8TSfLWkHKQja1EJVKKAyCmuOtcGMZ1UqU-AaRCGR55Dpos71-FDDQagCG1kxTLEwhdZimtwce7vg3wfsY7nxQ3DjyZIrUCqXLFMjxY9U3wXr3jD8U8DKg-DyKLgcBZcHwaUQv9EScGk</recordid><startdate>20161201</startdate><enddate>20161201</enddate><creator>SAHOO, B K</creator><creator>PANSARI, A</creator><general>Indian Academy of Sciences</general><general>Springer Nature B.V</general><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope></search><sort><creationdate>20161201</creationdate><title>Theoretical study of built-in-polarization effect on relaxation time and mean free path of phonons in AlxGa1−xN alloy</title><author>SAHOO, B K ; PANSARI, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p1413-dc39be31bf9ec2ecfe525b47412a1387e2615a8c6a019d21398ed7b0e4e8f8aa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Alloys</topic><topic>Chemistry and Materials Science</topic><topic>Debye temperature</topic><topic>Efficiency</topic><topic>Elastic properties</topic><topic>Electric fields</topic><topic>Engineering</topic><topic>Group velocity</topic><topic>Heat conductivity</topic><topic>Influence</topic><topic>Interfaces</topic><topic>Lasers</topic><topic>Light emitting diodes</topic><topic>Materials Science</topic><topic>Mean free path</topic><topic>Microwave communications</topic><topic>Optical properties</topic><topic>Phonons</topic><topic>Point defects</topic><topic>Polarization</topic><topic>Relaxation time</topic><topic>Room temperature</topic><topic>Scattering</topic><topic>Semiconductors</topic><topic>Thermodynamic properties</topic><topic>Transistors</topic><topic>Velocity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SAHOO, B K</creatorcontrib><creatorcontrib>PANSARI, A</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><jtitle>Bulletin of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SAHOO, B K</au><au>PANSARI, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Theoretical study of built-in-polarization effect on relaxation time and mean free path of phonons in AlxGa1−xN alloy</atitle><jtitle>Bulletin of materials science</jtitle><stitle>Bull Mater Sci</stitle><date>2016-12-01</date><risdate>2016</risdate><volume>39</volume><issue>7</issue><spage>1835</spage><epage>1841</epage><pages>1835-1841</pages><issn>0250-4707</issn><eissn>0973-7669</eissn><abstract>In this article we have investigated theoretically the effect of built-in-polarization field on various phonon scattering mechanisms in Al
x
Ga
1−x
N alloy. The built-in-polarization field of Al
x
Ga
1−x
N modifies the elastic constant, group velocity of phonons and Debye temperature. As a result, various phonon scattering mechanisms are changed. Important phonon scattering mechanisms such as normal scattering, Umklapp scattering, point defect scattering, dislocation scattering and phonon–electron scattering processes have been considered in the computation. The combined relaxation time due to above-mentioned scattering mechanisms has also been computed as a function of phonon frequency for various Al compositions at room temperature. It is found that combined relaxation time is enhanced due to built-in-polarization effect and makes phonon mean free path longer, which is required for higher optical, electrical and thermal transport processes. The result can be used to determine the effect of built-in-polarization field on optical and thermal properties of Al
x
Ga
1−x
N and will be useful, particularly, for improvement of thermoelectric performance of Al
x
Ga
1−x
N alloy through polarization engineering.</abstract><cop>Bangalore, India</cop><pub>Indian Academy of Sciences</pub><doi>10.1007/s12034-016-1319-3</doi><tpages>7</tpages></addata></record> |
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| ispartof | Bulletin of materials science, 2016-12, Vol.39 (7), p.1835-1841 |
| issn | 0250-4707 0973-7669 |
| language | eng |
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| source | Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Indian Academy of Sciences; ProQuest Central UK/Ireland; Free Full-Text Journals in Chemistry; SpringerLink Journals - AutoHoldings; ProQuest Central |
| subjects | Alloys Chemistry and Materials Science Debye temperature Efficiency Elastic properties Electric fields Engineering Group velocity Heat conductivity Influence Interfaces Lasers Light emitting diodes Materials Science Mean free path Microwave communications Optical properties Phonons Point defects Polarization Relaxation time Room temperature Scattering Semiconductors Thermodynamic properties Transistors Velocity |
| title | Theoretical study of built-in-polarization effect on relaxation time and mean free path of phonons in AlxGa1−xN alloy |
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