Electron beam irradiation-induced changes in the microstructure and optoelectronic properties of nanostructured Co-doped SnO2 diluted magnetic semiconductor thin film

This study reveals that electron beam irradiation (5–15 kGy) induced changes in the microstructure and the optoelectronic properties of nanostructured diluted magnetic semiconductor Sn 0.96 Co 0.04 O 2 thin film deposited by the spray pyrolysis method. XRD investigation shows that a single tetragona...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	European physical journal plus 2022-08, Vol.137 (8), p.905, Article 905
Hauptverfasser:	Ezzeldien, Mohammed, Amer, M. I., Shalaby, M. S., Moustafa, S. H., Hashem, H. M., Emam-Ismail, M., El-Hagary, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied and Technical Physics Atomic Complex Systems Condensed Matter Physics Crystal defects Crystal structure Crystallites Dilution Electron beams Electron irradiation Electrons Energy gap Fourier transforms Grain size Investigations Irradiation Lattice vibration Magnetic properties Magnetic semiconductors Mathematical and Computational Physics Microstructural analysis Microstructure Molecular Morphology Nanostructure Optical and Plasma Physics Optical properties Optoelectronics Oxygen Oxygen content Parameters Physics Physics and Astronomy Point defects Pyrolysis Radiation Radiation detectors Radiation dosage Reduction Refractivity Regular Article Rietveld method Semiconductors Spectrum analysis Surface roughness Theoretical Thin films
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!