InAs/Si Hetero-Junction Channel to Enhance the Performance of DG-TFET with Graphene Nanoribbon: an Analytical Model

In this paper, a new two-dimensional analytical model for our proposed InAs/Si based double-gate dual-metal tunnel field-effect transistor (DG-TFET) with graphene nano-ribbon is presented. Incorporating group III-V material in source – channel junction, which in turn forms heterojunction results bet...

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Veröffentlicht in:	SILICON 2021-05, Vol.13 (5), p.1453-1459
Hauptverfasser:	Dutta, Ritam, Subash, T. D., Paitya, Nitai
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Chemistry and Materials Science Electrons Energy gap Engineering Environmental Chemistry Field effect transistors Graphene Heterojunctions Indium Indium arsenides Inorganic Chemistry Lasers Materials Science Mathematical analysis Mathematical models Metals Nanoribbons Optical Devices Optics Original Paper Photonics Polymer Sciences Semiconductor devices Silicon Simulation Transistors Two dimensional analysis Two dimensional models
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