Effects of Epithermal Neutron Irradiation on the Characteristics of the Porous Silicon

Porous silicon (PSi) samples were irradiated in the epithermal neutron spectrum for 17 h and drastic changes were observed in its electrical, optical and morphological characteristics. The FE-SEM analysis showed that the mean pore size increases with irradiation, which could be due to the formation of atomic displacements in the silicon (Si) lattice. The electrical properties changed significantly after irradiation and showed an enhancement in the conductivity of PSi due to the 31 P levels which were formed via Neutron Transmutation Doping (NTD). Simultaneously, it has been observed that the surface composition as well as the transmittance of the porous Si wafer was modified as there were enough number of unbounded Si atoms as well as the 31 P levels in the lattice structure. Hence it is recommended that the detailed understanding of damage events as well as a vast knowledge on the neutron induced displacements in Si would open wide possibilities as a potential material in nuclear and materials technology.