Electrical and dielectric properties of the La0.4Bi0.3Sr0.2Ba0.1MnO3 ceramic synthesized by sol–gel method
We investigate the electrical and dielectric properties of the La 0.4 Bi 0.3 Sr 0.2 Ba 0.1 MnO 3 manganite that is prepared by the sol–gel method. Over the explored temperature interval, our compound reveals a semiconductor behavior. At elevated temperatures, the transport properties are explained b...
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| Veröffentlicht in: | European physical journal plus 2023-08, Vol.138 (8), p.682, Article 682 |
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| creator | Salhi, H. Moualhi, Y. Mleiki, A. Rahmouni, H. Khirouni, K. |
| description | We investigate the electrical and dielectric properties of the La
0.4
Bi
0.3
Sr
0.2
Ba
0.1
MnO
3
manganite that is prepared by the sol–gel method. Over the explored temperature interval, our compound reveals a semiconductor behavior. At elevated temperatures, the transport properties are explained by the activation of the small polaron hopping mechanism. The variable-range hopping process dominates the electrical properties at low temperatures. In the intermediate temperature, the Shklovskii–Efros variable-range hopping model describes well the transport properties. The complex impedance and modulus results reveal the existence of non-Debye relaxation phenomena. The scaling behavior of the
Z
″ spectra indicates that the relaxation time distributions are temperature independent. The dielectric permittivity behavior is related to the presence of the space charge polarization effects. Thus, Maxwell–Wagner’s model is adopted to analyze the dielectric permittivity response of the material. The application of the modified Curie–Weiss law confirms the relaxor dielectric behavior of the material. The presence of confined charge carriers at the grain boundary region is confirmed by analyzing the temperature dependence of the blocking factor.
Graphical abstract |
| doi_str_mv | 10.1140/epjp/s13360-023-04298-2 |
| format | Article |
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0.4
Bi
0.3
Sr
0.2
Ba
0.1
MnO
3
manganite that is prepared by the sol–gel method. Over the explored temperature interval, our compound reveals a semiconductor behavior. At elevated temperatures, the transport properties are explained by the activation of the small polaron hopping mechanism. The variable-range hopping process dominates the electrical properties at low temperatures. In the intermediate temperature, the Shklovskii–Efros variable-range hopping model describes well the transport properties. The complex impedance and modulus results reveal the existence of non-Debye relaxation phenomena. The scaling behavior of the
Z
″ spectra indicates that the relaxation time distributions are temperature independent. The dielectric permittivity behavior is related to the presence of the space charge polarization effects. Thus, Maxwell–Wagner’s model is adopted to analyze the dielectric permittivity response of the material. The application of the modified Curie–Weiss law confirms the relaxor dielectric behavior of the material. The presence of confined charge carriers at the grain boundary region is confirmed by analyzing the temperature dependence of the blocking factor.
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0.4
Bi
0.3
Sr
0.2
Ba
0.1
MnO
3
manganite that is prepared by the sol–gel method. Over the explored temperature interval, our compound reveals a semiconductor behavior. At elevated temperatures, the transport properties are explained by the activation of the small polaron hopping mechanism. The variable-range hopping process dominates the electrical properties at low temperatures. In the intermediate temperature, the Shklovskii–Efros variable-range hopping model describes well the transport properties. The complex impedance and modulus results reveal the existence of non-Debye relaxation phenomena. The scaling behavior of the
Z
″ spectra indicates that the relaxation time distributions are temperature independent. The dielectric permittivity behavior is related to the presence of the space charge polarization effects. Thus, Maxwell–Wagner’s model is adopted to analyze the dielectric permittivity response of the material. The application of the modified Curie–Weiss law confirms the relaxor dielectric behavior of the material. The presence of confined charge carriers at the grain boundary region is confirmed by analyzing the temperature dependence of the blocking factor.
Graphical abstract</description><subject>Applied and Technical Physics</subject><subject>Atomic</subject><subject>Behavior</subject><subject>Complex Systems</subject><subject>Condensed Matter Physics</subject><subject>Current carriers</subject><subject>Dielectric properties</subject><subject>Dielectric relaxation</subject><subject>Electrical properties</subject><subject>Electrons</subject><subject>Fuel cells</subject><subject>Grain boundaries</subject><subject>High temperature</subject><subject>Low temperature</subject><subject>Mathematical and Computational Physics</subject><subject>Molecular</subject><subject>Nitrates</subject><subject>Optical and Plasma Physics</subject><subject>Permittivity</subject><subject>Physical properties</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Regular Article</subject><subject>Relaxation time</subject><subject>Sol-gel processes</subject><subject>Space charge</subject><subject>Spectrum analysis</subject><subject>Temperature</subject><subject>Temperature dependence</subject><subject>Theoretical</subject><subject>Transport properties</subject><issn>2190-5444</issn><issn>2190-5444</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqFkMtOAjEUhhujiQR5Bpu4HujlzKVLIXhJMCzUdVN6gSHDzNgOC1z5Dr6hT2JxSHRnN-1p_u-cnA-ha0rGlAKZ2HbbTgLlPCMJYTwhwESRsDM0YFSQJAWA8z_vSzQKYUviAUFBwABV88rqzpdaVVjVBpvSnj5w65vW-q60ATcOdxuLF4qMYVqSMX_2ZMymsaRP9ZJjbb3aRSQc6pgL5bs1eHXAoam-Pj7XtsI7220ac4UunKqCHZ3uIXq9m7_MHpLF8v5xdrtINOfQJSYrDBiRp8CYgkLkudFASOFUJpzm4JQmBXFpqnOzoqzIXJpZw3TUAJlYKT5EN33fuMLb3oZObpu9r-NIyQQVqRCC5DGV9yntmxC8dbL15U75g6REHu3Ko13Z25XRrvyxK1kki54MkajX1v_2_w_9Bo5zgD0</recordid><startdate>20230804</startdate><enddate>20230804</enddate><creator>Salhi, H.</creator><creator>Moualhi, Y.</creator><creator>Mleiki, A.</creator><creator>Rahmouni, H.</creator><creator>Khirouni, K.</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>AEUYN</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BHPHI</scope><scope>BKSAR</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>P5Z</scope><scope>P62</scope><scope>PCBAR</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><orcidid>https://orcid.org/0009-0004-6459-4749</orcidid></search><sort><creationdate>20230804</creationdate><title>Electrical and dielectric properties of the La0.4Bi0.3Sr0.2Ba0.1MnO3 ceramic synthesized by sol–gel method</title><author>Salhi, H. ; Moualhi, Y. ; Mleiki, A. ; Rahmouni, H. ; Khirouni, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c334t-d68d4d975422a48977dc4008fa69fc34fac080f55c7db1286f56ed2c133469ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Applied and Technical Physics</topic><topic>Atomic</topic><topic>Behavior</topic><topic>Complex Systems</topic><topic>Condensed Matter Physics</topic><topic>Current carriers</topic><topic>Dielectric properties</topic><topic>Dielectric relaxation</topic><topic>Electrical properties</topic><topic>Electrons</topic><topic>Fuel cells</topic><topic>Grain boundaries</topic><topic>High temperature</topic><topic>Low temperature</topic><topic>Mathematical and Computational Physics</topic><topic>Molecular</topic><topic>Nitrates</topic><topic>Optical and Plasma Physics</topic><topic>Permittivity</topic><topic>Physical properties</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Regular Article</topic><topic>Relaxation time</topic><topic>Sol-gel processes</topic><topic>Space charge</topic><topic>Spectrum analysis</topic><topic>Temperature</topic><topic>Temperature dependence</topic><topic>Theoretical</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Salhi, H.</creatorcontrib><creatorcontrib>Moualhi, Y.</creatorcontrib><creatorcontrib>Mleiki, A.</creatorcontrib><creatorcontrib>Rahmouni, H.</creatorcontrib><creatorcontrib>Khirouni, K.</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest One Sustainability</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>Natural Science Collection</collection><collection>Earth, Atmospheric & Aquatic Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Earth, Atmospheric & Aquatic Science Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><jtitle>European physical journal plus</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Salhi, H.</au><au>Moualhi, Y.</au><au>Mleiki, A.</au><au>Rahmouni, H.</au><au>Khirouni, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical and dielectric properties of the La0.4Bi0.3Sr0.2Ba0.1MnO3 ceramic synthesized by sol–gel method</atitle><jtitle>European physical journal plus</jtitle><stitle>Eur. Phys. J. Plus</stitle><date>2023-08-04</date><risdate>2023</risdate><volume>138</volume><issue>8</issue><spage>682</spage><pages>682-</pages><artnum>682</artnum><issn>2190-5444</issn><eissn>2190-5444</eissn><abstract>We investigate the electrical and dielectric properties of the La
0.4
Bi
0.3
Sr
0.2
Ba
0.1
MnO
3
manganite that is prepared by the sol–gel method. Over the explored temperature interval, our compound reveals a semiconductor behavior. At elevated temperatures, the transport properties are explained by the activation of the small polaron hopping mechanism. The variable-range hopping process dominates the electrical properties at low temperatures. In the intermediate temperature, the Shklovskii–Efros variable-range hopping model describes well the transport properties. The complex impedance and modulus results reveal the existence of non-Debye relaxation phenomena. The scaling behavior of the
Z
″ spectra indicates that the relaxation time distributions are temperature independent. The dielectric permittivity behavior is related to the presence of the space charge polarization effects. Thus, Maxwell–Wagner’s model is adopted to analyze the dielectric permittivity response of the material. The application of the modified Curie–Weiss law confirms the relaxor dielectric behavior of the material. The presence of confined charge carriers at the grain boundary region is confirmed by analyzing the temperature dependence of the blocking factor.
Graphical abstract</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1140/epjp/s13360-023-04298-2</doi><orcidid>https://orcid.org/0009-0004-6459-4749</orcidid></addata></record> |
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| subjects | Applied and Technical Physics Atomic Behavior Complex Systems Condensed Matter Physics Current carriers Dielectric properties Dielectric relaxation Electrical properties Electrons Fuel cells Grain boundaries High temperature Low temperature Mathematical and Computational Physics Molecular Nitrates Optical and Plasma Physics Permittivity Physical properties Physics Physics and Astronomy Regular Article Relaxation time Sol-gel processes Space charge Spectrum analysis Temperature Temperature dependence Theoretical Transport properties |
| title | Electrical and dielectric properties of the La0.4Bi0.3Sr0.2Ba0.1MnO3 ceramic synthesized by sol–gel method |
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