A Study on the Electronic Properties of SiOxNy/p-Si Interface
In this study, we investigated the electrical properties of Sn/SiO x N y / p-Si metal-insulator layer-semiconductor ( MIS ) structure. Silicon oxynitride ( SiO x N y ) thin film was grown on chemically cleaned p-Si substrate by the plasma nitridation process. The chemical composition and surface mor...
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| Veröffentlicht in: | SILICON 2018-11, Vol.10 (6), p.2717-2725 |
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| creator | Akkaya, A. Boyarbay, B. Çetin, H. Yıldızlı, K. Ayyıldız, E. |
| description | In this study, we investigated the electrical properties of
Sn/SiO
x
N
y
/
p-Si
metal-insulator layer-semiconductor (
MIS
) structure. Silicon oxynitride (
SiO
x
N
y
) thin film was grown on chemically cleaned
p-Si
substrate by the plasma nitridation process. The chemical composition and surface morphology of the thin film were analyzed using X-ray photoelectron spectroscopy (
XPS
) and atomic force microscopy (
AFM
). Electrical measurements of the devices (e.g. current-voltage (
I
-
V
), capacitance-voltage (
C
-
V
), capacitance and conductance-frequency characteristics (
C
-f and
G
-
f
)) were performed at room temperature. The characteristic parameters of the
SiO
x
N
y
/
p-Si
interface such as energy position, interface state density and relaxation time constant were obtained from admittance measurements over a wide range of frequencies (from 1 to 500 kHz) for the values of the forward bias between 0.0 V ≤ V ≤ 1.1 V. The values of the interface state density and their relaxation time constant changed from 3.684 × 10
13
cm
− 2
eV
− 1
to 3.216 × 10
12
cm
− 2
eV
− 1
and from 1.770 × 10
− 5
s to 6.277 × 10
− 7
s, respectively. The obtained values of the interface state density were compared to those of the oxides grown by the other techniques. The experimental results clearly show that the density and location of interface states has a significant effect on electrical characteristics of the
MIS
structure. |
| doi_str_mv | 10.1007/s12633-018-9811-6 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2919555327</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2919555327</sourcerecordid><originalsourceid>FETCH-LOGICAL-c246t-40876a122b2fa41bf125941321dba6fdc08bdc36f4751d2622637c3b69233b013</originalsourceid><addsrcrecordid>eNp1kEFLAzEQhYMoWGp_gLeA59hMspvdHDyUUrVQrFAFb2E3m-iWulmTFOy_b8qKnpzLzOG9mXkfQtdAb4HSYhqACc4JhZLIEoCIMzSCshBESijPf2f6dokmIWxpKs6KUsgRupvhTdw3B-w6HD8MXuyMjt51rcbP3vXGx9YE7CzetOvvp8O0J5sWL7tovK20uUIXttoFM_npY_R6v3iZP5LV-mE5n62IZpmIJKPpgQoYq5mtMqgtsFxmwBk0dSVso2lZN5oLmxU5NEywFKfQvBaScV5T4GN0M-ztvfvamxDV1u19l04qJkHmeZ7yJBUMKu1dCN5Y1fv2s_IHBVSdQKkBlEqg1AmUEsnDBk9I2u7d-L_N_5uOsA5oPw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2919555327</pqid></control><display><type>article</type><title>A Study on the Electronic Properties of SiOxNy/p-Si Interface</title><source>SpringerNature Journals</source><source>ProQuest Central UK/Ireland</source><source>ProQuest Central</source><creator>Akkaya, A. ; Boyarbay, B. ; Çetin, H. ; Yıldızlı, K. ; Ayyıldız, E.</creator><creatorcontrib>Akkaya, A. ; Boyarbay, B. ; Çetin, H. ; Yıldızlı, K. ; Ayyıldız, E.</creatorcontrib><description>In this study, we investigated the electrical properties of
Sn/SiO
x
N
y
/
p-Si
metal-insulator layer-semiconductor (
MIS
) structure. Silicon oxynitride (
SiO
x
N
y
) thin film was grown on chemically cleaned
p-Si
substrate by the plasma nitridation process. The chemical composition and surface morphology of the thin film were analyzed using X-ray photoelectron spectroscopy (
XPS
) and atomic force microscopy (
AFM
). Electrical measurements of the devices (e.g. current-voltage (
I
-
V
), capacitance-voltage (
C
-
V
), capacitance and conductance-frequency characteristics (
C
-f and
G
-
f
)) were performed at room temperature. The characteristic parameters of the
SiO
x
N
y
/
p-Si
interface such as energy position, interface state density and relaxation time constant were obtained from admittance measurements over a wide range of frequencies (from 1 to 500 kHz) for the values of the forward bias between 0.0 V ≤ V ≤ 1.1 V. The values of the interface state density and their relaxation time constant changed from 3.684 × 10
13
cm
− 2
eV
− 1
to 3.216 × 10
12
cm
− 2
eV
− 1
and from 1.770 × 10
− 5
s to 6.277 × 10
− 7
s, respectively. The obtained values of the interface state density were compared to those of the oxides grown by the other techniques. The experimental results clearly show that the density and location of interface states has a significant effect on electrical characteristics of the
MIS
structure.</description><identifier>ISSN: 1876-990X</identifier><identifier>EISSN: 1876-9918</identifier><identifier>DOI: 10.1007/s12633-018-9811-6</identifier><language>eng</language><publisher>Dordrecht: Springer Netherlands</publisher><subject>Capacitance ; Chemical composition ; Chemistry ; Chemistry and Materials Science ; Density ; Electric potential ; Electrical measurement ; Electrical properties ; Electronic properties ; Environmental Chemistry ; Inorganic Chemistry ; Insulators ; Lasers ; Materials Science ; Optical Devices ; Optics ; Original Paper ; Photoelectrons ; Photonics ; Polymer Sciences ; Relaxation time ; Room temperature ; Silicon oxynitride ; Silicon substrates ; Thin films ; Time constant ; Voltage ; X ray photoelectron spectroscopy</subject><ispartof>SILICON, 2018-11, Vol.10 (6), p.2717-2725</ispartof><rights>Springer Science+Business Media B.V., part of Springer Nature 2018</rights><rights>Springer Science+Business Media B.V., part of Springer Nature 2018.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c246t-40876a122b2fa41bf125941321dba6fdc08bdc36f4751d2622637c3b69233b013</citedby><cites>FETCH-LOGICAL-c246t-40876a122b2fa41bf125941321dba6fdc08bdc36f4751d2622637c3b69233b013</cites><orcidid>0000-0002-4086-6365</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12633-018-9811-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2919555327?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>315,781,785,21393,27929,27930,33749,41493,42562,43810,51324,64390,64394,72474</link.rule.ids></links><search><creatorcontrib>Akkaya, A.</creatorcontrib><creatorcontrib>Boyarbay, B.</creatorcontrib><creatorcontrib>Çetin, H.</creatorcontrib><creatorcontrib>Yıldızlı, K.</creatorcontrib><creatorcontrib>Ayyıldız, E.</creatorcontrib><title>A Study on the Electronic Properties of SiOxNy/p-Si Interface</title><title>SILICON</title><addtitle>Silicon</addtitle><description>In this study, we investigated the electrical properties of
Sn/SiO
x
N
y
/
p-Si
metal-insulator layer-semiconductor (
MIS
) structure. Silicon oxynitride (
SiO
x
N
y
) thin film was grown on chemically cleaned
p-Si
substrate by the plasma nitridation process. The chemical composition and surface morphology of the thin film were analyzed using X-ray photoelectron spectroscopy (
XPS
) and atomic force microscopy (
AFM
). Electrical measurements of the devices (e.g. current-voltage (
I
-
V
), capacitance-voltage (
C
-
V
), capacitance and conductance-frequency characteristics (
C
-f and
G
-
f
)) were performed at room temperature. The characteristic parameters of the
SiO
x
N
y
/
p-Si
interface such as energy position, interface state density and relaxation time constant were obtained from admittance measurements over a wide range of frequencies (from 1 to 500 kHz) for the values of the forward bias between 0.0 V ≤ V ≤ 1.1 V. The values of the interface state density and their relaxation time constant changed from 3.684 × 10
13
cm
− 2
eV
− 1
to 3.216 × 10
12
cm
− 2
eV
− 1
and from 1.770 × 10
− 5
s to 6.277 × 10
− 7
s, respectively. The obtained values of the interface state density were compared to those of the oxides grown by the other techniques. The experimental results clearly show that the density and location of interface states has a significant effect on electrical characteristics of the
MIS
structure.</description><subject>Capacitance</subject><subject>Chemical composition</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Density</subject><subject>Electric potential</subject><subject>Electrical measurement</subject><subject>Electrical properties</subject><subject>Electronic properties</subject><subject>Environmental Chemistry</subject><subject>Inorganic Chemistry</subject><subject>Insulators</subject><subject>Lasers</subject><subject>Materials Science</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Original Paper</subject><subject>Photoelectrons</subject><subject>Photonics</subject><subject>Polymer Sciences</subject><subject>Relaxation time</subject><subject>Room temperature</subject><subject>Silicon oxynitride</subject><subject>Silicon substrates</subject><subject>Thin films</subject><subject>Time constant</subject><subject>Voltage</subject><subject>X ray photoelectron spectroscopy</subject><issn>1876-990X</issn><issn>1876-9918</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1kEFLAzEQhYMoWGp_gLeA59hMspvdHDyUUrVQrFAFb2E3m-iWulmTFOy_b8qKnpzLzOG9mXkfQtdAb4HSYhqACc4JhZLIEoCIMzSCshBESijPf2f6dokmIWxpKs6KUsgRupvhTdw3B-w6HD8MXuyMjt51rcbP3vXGx9YE7CzetOvvp8O0J5sWL7tovK20uUIXttoFM_npY_R6v3iZP5LV-mE5n62IZpmIJKPpgQoYq5mtMqgtsFxmwBk0dSVso2lZN5oLmxU5NEywFKfQvBaScV5T4GN0M-ztvfvamxDV1u19l04qJkHmeZ7yJBUMKu1dCN5Y1fv2s_IHBVSdQKkBlEqg1AmUEsnDBk9I2u7d-L_N_5uOsA5oPw</recordid><startdate>20181101</startdate><enddate>20181101</enddate><creator>Akkaya, A.</creator><creator>Boyarbay, B.</creator><creator>Çetin, H.</creator><creator>Yıldızlı, K.</creator><creator>Ayyıldız, E.</creator><general>Springer Netherlands</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><orcidid>https://orcid.org/0000-0002-4086-6365</orcidid></search><sort><creationdate>20181101</creationdate><title>A Study on the Electronic Properties of SiOxNy/p-Si Interface</title><author>Akkaya, A. ; Boyarbay, B. ; Çetin, H. ; Yıldızlı, K. ; Ayyıldız, E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c246t-40876a122b2fa41bf125941321dba6fdc08bdc36f4751d2622637c3b69233b013</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Capacitance</topic><topic>Chemical composition</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Density</topic><topic>Electric potential</topic><topic>Electrical measurement</topic><topic>Electrical properties</topic><topic>Electronic properties</topic><topic>Environmental Chemistry</topic><topic>Inorganic Chemistry</topic><topic>Insulators</topic><topic>Lasers</topic><topic>Materials Science</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Original Paper</topic><topic>Photoelectrons</topic><topic>Photonics</topic><topic>Polymer Sciences</topic><topic>Relaxation time</topic><topic>Room temperature</topic><topic>Silicon oxynitride</topic><topic>Silicon substrates</topic><topic>Thin films</topic><topic>Time constant</topic><topic>Voltage</topic><topic>X ray photoelectron spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Akkaya, A.</creatorcontrib><creatorcontrib>Boyarbay, B.</creatorcontrib><creatorcontrib>Çetin, H.</creatorcontrib><creatorcontrib>Yıldızlı, K.</creatorcontrib><creatorcontrib>Ayyıldız, E.</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><jtitle>SILICON</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Akkaya, A.</au><au>Boyarbay, B.</au><au>Çetin, H.</au><au>Yıldızlı, K.</au><au>Ayyıldız, E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Study on the Electronic Properties of SiOxNy/p-Si Interface</atitle><jtitle>SILICON</jtitle><stitle>Silicon</stitle><date>2018-11-01</date><risdate>2018</risdate><volume>10</volume><issue>6</issue><spage>2717</spage><epage>2725</epage><pages>2717-2725</pages><issn>1876-990X</issn><eissn>1876-9918</eissn><abstract>In this study, we investigated the electrical properties of
Sn/SiO
x
N
y
/
p-Si
metal-insulator layer-semiconductor (
MIS
) structure. Silicon oxynitride (
SiO
x
N
y
) thin film was grown on chemically cleaned
p-Si
substrate by the plasma nitridation process. The chemical composition and surface morphology of the thin film were analyzed using X-ray photoelectron spectroscopy (
XPS
) and atomic force microscopy (
AFM
). Electrical measurements of the devices (e.g. current-voltage (
I
-
V
), capacitance-voltage (
C
-
V
), capacitance and conductance-frequency characteristics (
C
-f and
G
-
f
)) were performed at room temperature. The characteristic parameters of the
SiO
x
N
y
/
p-Si
interface such as energy position, interface state density and relaxation time constant were obtained from admittance measurements over a wide range of frequencies (from 1 to 500 kHz) for the values of the forward bias between 0.0 V ≤ V ≤ 1.1 V. The values of the interface state density and their relaxation time constant changed from 3.684 × 10
13
cm
− 2
eV
− 1
to 3.216 × 10
12
cm
− 2
eV
− 1
and from 1.770 × 10
− 5
s to 6.277 × 10
− 7
s, respectively. The obtained values of the interface state density were compared to those of the oxides grown by the other techniques. The experimental results clearly show that the density and location of interface states has a significant effect on electrical characteristics of the
MIS
structure.</abstract><cop>Dordrecht</cop><pub>Springer Netherlands</pub><doi>10.1007/s12633-018-9811-6</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-4086-6365</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1876-990X |
| ispartof | SILICON, 2018-11, Vol.10 (6), p.2717-2725 |
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| language | eng |
| recordid | cdi_proquest_journals_2919555327 |
| source | SpringerNature Journals; ProQuest Central UK/Ireland; ProQuest Central |
| subjects | Capacitance Chemical composition Chemistry Chemistry and Materials Science Density Electric potential Electrical measurement Electrical properties Electronic properties Environmental Chemistry Inorganic Chemistry Insulators Lasers Materials Science Optical Devices Optics Original Paper Photoelectrons Photonics Polymer Sciences Relaxation time Room temperature Silicon oxynitride Silicon substrates Thin films Time constant Voltage X ray photoelectron spectroscopy |
| title | A Study on the Electronic Properties of SiOxNy/p-Si Interface |
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