Design of Si0.5Ge0.5 Sourced Nano-cantilever Pressure Sensor Based on Charge Plasma and Gate Stacked Nanowire Tunnel Field Effect Transistor

In this paper, Si 0.5 Ge 0.5 source with charge plasma and gate stacked Nanowire Tunnel Field Effect Transistor (CP-GS-NWTFET) based pressure sensor is proposed. The pressure sensor is one of the essential components in sensing and actuating applications. Nanocavity is created beneath the gate electrode for possible bending due to the pressure applied. The presented sensor is based on the capacitive gate coupling principle, owing to which the tunneling current is changed. The applied pressure on the nanocantilever (hanging gate electrode towards the cavity) bends the nanocantilever which changes the electrical characteristics of the device. Various bending of the nanocantilever beam used are 0.5, 1, 1.5, and 2 nm. Several device parameters including electric field, potential, carrier concentration, energy band diagram, I on /I off ratio, subthreshold slope, etc. are evaluated as performance parameters of the presented device. The sensitivity is defined as the change in the current ratio per nm of bending with respect to a structure having no bending. The study reveals that the presented pressor sensor is more sensitive for lower bendings. The sensitivity for 0.5 nm and 2 nm of bending is 2.74 × 10 08 /nm and 4.73 × 10 07 /nm respectively. Simulation unearths a remarkable connection between hypothetical and practical accepts of formation. The total length of the proposed device, CP-GS-NWTFET is 92 nm.