Intriguing metal–semiconductor transport properties on Se-substituted β-Zn4Sb3 compounds
Among the numerous thermoelectric compounds, β-Zn 4 Sb 3 has gained significant interest as a promising thermoelectric material due to its effective working temperature range and enhanced figure of merit (ZT) values. In this work, the effect of Se doping in β-Zn 4 Sb 3 system has been studied. The s...
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description | Among the numerous thermoelectric compounds, β-Zn
4
Sb
3
has gained significant interest as a promising thermoelectric material due to its effective working temperature range and enhanced figure of merit (ZT) values. In this work, the effect of Se doping in β-Zn
4
Sb
3
system has been studied. The structure refinement of the prepared Zn
3.9
Se
0.1
Sb
3
solid solution was carried out using Rietveld refinement analysis, which confirms that the compound crystallizes in hexagonal rhombohedric structure with R-3c space group. Temperature-dependent electrical conductivity (
σ
) of the sample has been measured in the temperature range of 300–610 K. At room temperature, the electrical conductivity value of the sample was found to be high (~1919 S m
−1
) and it tends to decrease upon increasing the temperature up to 514 K and thereafter slightly increases, which indicates the typical metallic to semiconductor transition behaviour of the prepared compound. The positive Hall coefficient (
R
H
) value reveals that the holes are the dominant charge carriers (p-type) in the prepared sample. The power factor value (
σS
2
) of the sample increases linearly with increase in temperature up to 610 K. Hence the Se substitution in pristine Zn
4
Sb
3
possesses greater effect in inducing superior thermoelectric power factor values. Temperature-dependent total thermal conductivity (
κ
total
) of Zn
3.9
Se
0.1
Sb
3
sample is measured in the temperature range of 300 to 610 K. At room temperature, the
κ
total
value of the sample was found to be very low (~1 Wm
−1
K
−1
) and it decreases linearly with increasing the temperature. At 610 K, the sample shows merely ultra-low-thermal conductivity value (~0.6 Wm
−1
K
−1
). A peak ZT value of ~0.3 was obtained in Zn
3.9
Se
0.1
Sb
3
solid solution at 610 K, which was found to be quite competitive with the current thermoelectric materials. |
doi_str_mv | 10.1007/s12034-022-02866-3 |
format | Article |
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4
Sb
3
has gained significant interest as a promising thermoelectric material due to its effective working temperature range and enhanced figure of merit (ZT) values. In this work, the effect of Se doping in β-Zn
4
Sb
3
system has been studied. The structure refinement of the prepared Zn
3.9
Se
0.1
Sb
3
solid solution was carried out using Rietveld refinement analysis, which confirms that the compound crystallizes in hexagonal rhombohedric structure with R-3c space group. Temperature-dependent electrical conductivity (
σ
) of the sample has been measured in the temperature range of 300–610 K. At room temperature, the electrical conductivity value of the sample was found to be high (~1919 S m
−1
) and it tends to decrease upon increasing the temperature up to 514 K and thereafter slightly increases, which indicates the typical metallic to semiconductor transition behaviour of the prepared compound. The positive Hall coefficient (
R
H
) value reveals that the holes are the dominant charge carriers (p-type) in the prepared sample. The power factor value (
σS
2
) of the sample increases linearly with increase in temperature up to 610 K. Hence the Se substitution in pristine Zn
4
Sb
3
possesses greater effect in inducing superior thermoelectric power factor values. Temperature-dependent total thermal conductivity (
κ
total
) of Zn
3.9
Se
0.1
Sb
3
sample is measured in the temperature range of 300 to 610 K. At room temperature, the
κ
total
value of the sample was found to be very low (~1 Wm
−1
K
−1
) and it decreases linearly with increasing the temperature. At 610 K, the sample shows merely ultra-low-thermal conductivity value (~0.6 Wm
−1
K
−1
). A peak ZT value of ~0.3 was obtained in Zn
3.9
Se
0.1
Sb
3
solid solution at 610 K, which was found to be quite competitive with the current thermoelectric materials.</description><identifier>ISSN: 0973-7669</identifier><identifier>ISSN: 0250-4707</identifier><identifier>EISSN: 0973-7669</identifier><identifier>DOI: 10.1007/s12034-022-02866-3</identifier><language>eng</language><publisher>Bangalore: Indian Academy of Sciences</publisher><subject>Chemistry and Materials Science ; Crystal structure ; Current carriers ; Electrical resistivity ; Electromagnetism ; Engineering ; Figure of merit ; Hall effect ; Heat conductivity ; Heat transfer ; Hot pressing ; Materials Science ; Power factor ; Room temperature ; Solid solutions ; Temperature dependence ; Thermal conductivity ; Thermoelectric materials ; Transport properties ; Zinc antimonides</subject><ispartof>Bulletin of materials science, 2023-02, Vol.46 (1), p.37, Article 37</ispartof><rights>Indian Academy of Sciences 2023</rights><rights>Indian Academy of Sciences 2023.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-3b44162adfd330e9474dbf648d4da00f33dafbe985cc4d71c0029fde662af13e3</citedby><cites>FETCH-LOGICAL-c319t-3b44162adfd330e9474dbf648d4da00f33dafbe985cc4d71c0029fde662af13e3</cites><orcidid>0000-0001-8483-1378</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/2919339531/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2919339531?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>315,782,786,21395,27931,27932,33751,41495,42564,43812,51326,64392,64396,72476,74309</link.rule.ids></links><search><creatorcontrib>Karthikeyan, N</creatorcontrib><creatorcontrib>Kumar, B Kavin</creatorcontrib><creatorcontrib>Kumar, G Sathish</creatorcontrib><creatorcontrib>Akilan, R</creatorcontrib><title>Intriguing metal–semiconductor transport properties on Se-substituted β-Zn4Sb3 compounds</title><title>Bulletin of materials science</title><addtitle>Bull Mater Sci</addtitle><description>Among the numerous thermoelectric compounds, β-Zn
4
Sb
3
has gained significant interest as a promising thermoelectric material due to its effective working temperature range and enhanced figure of merit (ZT) values. In this work, the effect of Se doping in β-Zn
4
Sb
3
system has been studied. The structure refinement of the prepared Zn
3.9
Se
0.1
Sb
3
solid solution was carried out using Rietveld refinement analysis, which confirms that the compound crystallizes in hexagonal rhombohedric structure with R-3c space group. Temperature-dependent electrical conductivity (
σ
) of the sample has been measured in the temperature range of 300–610 K. At room temperature, the electrical conductivity value of the sample was found to be high (~1919 S m
−1
) and it tends to decrease upon increasing the temperature up to 514 K and thereafter slightly increases, which indicates the typical metallic to semiconductor transition behaviour of the prepared compound. The positive Hall coefficient (
R
H
) value reveals that the holes are the dominant charge carriers (p-type) in the prepared sample. The power factor value (
σS
2
) of the sample increases linearly with increase in temperature up to 610 K. Hence the Se substitution in pristine Zn
4
Sb
3
possesses greater effect in inducing superior thermoelectric power factor values. Temperature-dependent total thermal conductivity (
κ
total
) of Zn
3.9
Se
0.1
Sb
3
sample is measured in the temperature range of 300 to 610 K. At room temperature, the
κ
total
value of the sample was found to be very low (~1 Wm
−1
K
−1
) and it decreases linearly with increasing the temperature. At 610 K, the sample shows merely ultra-low-thermal conductivity value (~0.6 Wm
−1
K
−1
). A peak ZT value of ~0.3 was obtained in Zn
3.9
Se
0.1
Sb
3
solid solution at 610 K, which was found to be quite competitive with the current thermoelectric materials.</description><subject>Chemistry and Materials Science</subject><subject>Crystal structure</subject><subject>Current carriers</subject><subject>Electrical resistivity</subject><subject>Electromagnetism</subject><subject>Engineering</subject><subject>Figure of merit</subject><subject>Hall effect</subject><subject>Heat conductivity</subject><subject>Heat transfer</subject><subject>Hot pressing</subject><subject>Materials Science</subject><subject>Power factor</subject><subject>Room temperature</subject><subject>Solid solutions</subject><subject>Temperature dependence</subject><subject>Thermal conductivity</subject><subject>Thermoelectric materials</subject><subject>Transport properties</subject><subject>Zinc antimonides</subject><issn>0973-7669</issn><issn>0250-4707</issn><issn>0973-7669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kD1OxDAQhS0EEsvCBagiURvsjDdZl2jFz0pIFAsNFFbin1VWGzv4p6DjDtyEg3AIToIhSFBRjGaK9948fQgdU3JKCanPAi0JMEzKMs-8qjDsoAnhNeC6qvjun3sfHYSwIYRyxugEPS5t9N06dXZd9Do224-X16D7TjqrkozOF9E3NgzOx2LwbtA-djoUzhYrjUNqQ-xiiloV72_4wbJVC4V0_eCSVeEQ7ZlmG_TRz56i-8uLu8U1vrm9Wi7Ob7AEyiOGNjepykYZBUA0ZzVTranYXDHVEGIAVGNazeczKZmqqSSk5EbpKnsMBQ1TdDLm5oJPSYcoNi55m1-KklMOwGdAs6ocVdK7ELw2YvBd3_hnQYn4gihGiCJDFN8QBWQTjKaQxXat_W_0P65Pun94aQ</recordid><startdate>20230227</startdate><enddate>20230227</enddate><creator>Karthikeyan, N</creator><creator>Kumar, B Kavin</creator><creator>Kumar, G Sathish</creator><creator>Akilan, R</creator><general>Indian Academy of Sciences</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><orcidid>https://orcid.org/0000-0001-8483-1378</orcidid></search><sort><creationdate>20230227</creationdate><title>Intriguing metal–semiconductor transport properties on Se-substituted β-Zn4Sb3 compounds</title><author>Karthikeyan, N ; Kumar, B Kavin ; Kumar, G Sathish ; Akilan, R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-3b44162adfd330e9474dbf648d4da00f33dafbe985cc4d71c0029fde662af13e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Chemistry and Materials Science</topic><topic>Crystal structure</topic><topic>Current carriers</topic><topic>Electrical resistivity</topic><topic>Electromagnetism</topic><topic>Engineering</topic><topic>Figure of merit</topic><topic>Hall effect</topic><topic>Heat conductivity</topic><topic>Heat transfer</topic><topic>Hot pressing</topic><topic>Materials Science</topic><topic>Power factor</topic><topic>Room temperature</topic><topic>Solid solutions</topic><topic>Temperature dependence</topic><topic>Thermal conductivity</topic><topic>Thermoelectric materials</topic><topic>Transport properties</topic><topic>Zinc antimonides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Karthikeyan, N</creatorcontrib><creatorcontrib>Kumar, B Kavin</creatorcontrib><creatorcontrib>Kumar, G Sathish</creatorcontrib><creatorcontrib>Akilan, R</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><jtitle>Bulletin of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Karthikeyan, N</au><au>Kumar, B Kavin</au><au>Kumar, G Sathish</au><au>Akilan, R</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Intriguing metal–semiconductor transport properties on Se-substituted β-Zn4Sb3 compounds</atitle><jtitle>Bulletin of materials science</jtitle><stitle>Bull Mater Sci</stitle><date>2023-02-27</date><risdate>2023</risdate><volume>46</volume><issue>1</issue><spage>37</spage><pages>37-</pages><artnum>37</artnum><issn>0973-7669</issn><issn>0250-4707</issn><eissn>0973-7669</eissn><abstract>Among the numerous thermoelectric compounds, β-Zn
4
Sb
3
has gained significant interest as a promising thermoelectric material due to its effective working temperature range and enhanced figure of merit (ZT) values. In this work, the effect of Se doping in β-Zn
4
Sb
3
system has been studied. The structure refinement of the prepared Zn
3.9
Se
0.1
Sb
3
solid solution was carried out using Rietveld refinement analysis, which confirms that the compound crystallizes in hexagonal rhombohedric structure with R-3c space group. Temperature-dependent electrical conductivity (
σ
) of the sample has been measured in the temperature range of 300–610 K. At room temperature, the electrical conductivity value of the sample was found to be high (~1919 S m
−1
) and it tends to decrease upon increasing the temperature up to 514 K and thereafter slightly increases, which indicates the typical metallic to semiconductor transition behaviour of the prepared compound. The positive Hall coefficient (
R
H
) value reveals that the holes are the dominant charge carriers (p-type) in the prepared sample. The power factor value (
σS
2
) of the sample increases linearly with increase in temperature up to 610 K. Hence the Se substitution in pristine Zn
4
Sb
3
possesses greater effect in inducing superior thermoelectric power factor values. Temperature-dependent total thermal conductivity (
κ
total
) of Zn
3.9
Se
0.1
Sb
3
sample is measured in the temperature range of 300 to 610 K. At room temperature, the
κ
total
value of the sample was found to be very low (~1 Wm
−1
K
−1
) and it decreases linearly with increasing the temperature. At 610 K, the sample shows merely ultra-low-thermal conductivity value (~0.6 Wm
−1
K
−1
). A peak ZT value of ~0.3 was obtained in Zn
3.9
Se
0.1
Sb
3
solid solution at 610 K, which was found to be quite competitive with the current thermoelectric materials.</abstract><cop>Bangalore</cop><pub>Indian Academy of Sciences</pub><doi>10.1007/s12034-022-02866-3</doi><orcidid>https://orcid.org/0000-0001-8483-1378</orcidid></addata></record> |
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source | SpringerNature Journals; Indian Academy of Sciences; EZB-FREE-00999 freely available EZB journals; ProQuest Central UK/Ireland; Free Full-Text Journals in Chemistry; ProQuest Central |
subjects | Chemistry and Materials Science Crystal structure Current carriers Electrical resistivity Electromagnetism Engineering Figure of merit Hall effect Heat conductivity Heat transfer Hot pressing Materials Science Power factor Room temperature Solid solutions Temperature dependence Thermal conductivity Thermoelectric materials Transport properties Zinc antimonides |
title | Intriguing metal–semiconductor transport properties on Se-substituted β-Zn4Sb3 compounds |
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