The Optimization of Program Operation for Low Power Consumption in 3D Ferroelectric (Fe)-NAND Flash Memory

This paper proposes an optimized program operation method for ferroelectric NAND (FE-NAND) flash memory utilizing the gate-induced drain leakage (GIDL) program and validated through simulations. The program operation was performed by setting the time for the unselected cell to reach the pass voltage...

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Veröffentlicht in:	Electronics (Basel) 2024-01, Vol.13 (2), p.316
Hauptverfasser:	Yun, Myeongsang, Lee, Gyuhyeon, Ryu, Gyunseok, Kim, Hyoungsoo, Kang, Myounggon
Format:	Artikel
Sprache:	eng
Schlagworte:	Complementary metal oxide semiconductors Design and construction Ferroelectric materials Ferroelectricity Flash memory Flash memory (computers) Integrated circuit fabrication Mathematical optimization Methods Power consumption Simulation Threshold voltage Transistors
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