CMOS Voltage-Controlled Oscillator with Complementary and Adaptive Overdrive Voltage Control Structures
This paper displays a voltage-controlled oscillator (VCO) with high performance implemented in 0.18 µm CMOS. The proposed CMOS VCO adopts a current-reused method, analog coarse and fine tuning mechanisms, and an adaptive overdrive voltage control structure to increase the overall performance, such a...
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Veröffentlicht in: | Electronics (Basel) 2024-01, Vol.13 (2), p.440 |
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description | This paper displays a voltage-controlled oscillator (VCO) with high performance implemented in 0.18 µm CMOS. The proposed CMOS VCO adopts a current-reused method, analog coarse and fine tuning mechanisms, and an adaptive overdrive voltage control structure to increase the overall performance, such as the power dissipation, phase noise, and tuning range, and has a robust start-up condition. The current-reused complementary structure with higher transistor transconductances is to save power consumption; the analog coarse and fine tuning mechanisms are to effectively widen the tuning range; and the adaptive overdrive voltage control technique is to change the transconductances of the transistors to improve power consumption by reasonably biasing the gate and body terminals in a class-AB mode to adjust the threshold voltage of the NMOS transistors. The proposed CMOS VCO adopts the class-AB mode to improve the overall performance and the start-up condition. The figure-of-merit (FOM) and FOM with tuning range (FOMT) are used in evaluating the CMOS VCO performance. The measured phase noise at 1 MHz and 10 MHz offsets is –130.34 dBc/Hz and –150.96 dBc/Hz at the 3.38 GHz operating frequency, respectively. The proposed CMOS VCO has a tuning range between 2.85 and 3.62 GHz corresponding to 23.8% for the fifth-generation (5G) wireless communication applications. The proposed CMOS VCO core using a 1.4-V supply consumes 7.5 mW DC power. The FOMs and FOMTs at 1- and 10-MHz offsets are −192.2, −192.8, −199.7, and −200.3 dBc/Hz, respectively, from the 3.38 GHz output frequency. |
doi_str_mv | 10.3390/electronics13020440 |
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The proposed CMOS VCO adopts a current-reused method, analog coarse and fine tuning mechanisms, and an adaptive overdrive voltage control structure to increase the overall performance, such as the power dissipation, phase noise, and tuning range, and has a robust start-up condition. The current-reused complementary structure with higher transistor transconductances is to save power consumption; the analog coarse and fine tuning mechanisms are to effectively widen the tuning range; and the adaptive overdrive voltage control technique is to change the transconductances of the transistors to improve power consumption by reasonably biasing the gate and body terminals in a class-AB mode to adjust the threshold voltage of the NMOS transistors. The proposed CMOS VCO adopts the class-AB mode to improve the overall performance and the start-up condition. The figure-of-merit (FOM) and FOM with tuning range (FOMT) are used in evaluating the CMOS VCO performance. The measured phase noise at 1 MHz and 10 MHz offsets is –130.34 dBc/Hz and –150.96 dBc/Hz at the 3.38 GHz operating frequency, respectively. The proposed CMOS VCO has a tuning range between 2.85 and 3.62 GHz corresponding to 23.8% for the fifth-generation (5G) wireless communication applications. The proposed CMOS VCO core using a 1.4-V supply consumes 7.5 mW DC power. The FOMs and FOMTs at 1- and 10-MHz offsets are −192.2, −192.8, −199.7, and −200.3 dBc/Hz, respectively, from the 3.38 GHz output frequency.</description><identifier>ISSN: 2079-9292</identifier><identifier>EISSN: 2079-9292</identifier><identifier>DOI: 10.3390/electronics13020440</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Adaptive control ; Bias ; Circuit design ; CMOS ; Complementary metal oxide semiconductors ; Design and construction ; Design specifications ; Energy dissipation ; Figure of merit ; Metal oxide semiconductors ; Methods ; Offsets ; Oscillators (Electronics) ; Phase noise ; Power consumption ; Threshold voltage ; Transistors ; Voltage controlled oscillators ; Wireless communications</subject><ispartof>Electronics (Basel), 2024-01, Vol.13 (2), p.440</ispartof><rights>COPYRIGHT 2024 MDPI AG</rights><rights>2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). 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The proposed CMOS VCO adopts a current-reused method, analog coarse and fine tuning mechanisms, and an adaptive overdrive voltage control structure to increase the overall performance, such as the power dissipation, phase noise, and tuning range, and has a robust start-up condition. The current-reused complementary structure with higher transistor transconductances is to save power consumption; the analog coarse and fine tuning mechanisms are to effectively widen the tuning range; and the adaptive overdrive voltage control technique is to change the transconductances of the transistors to improve power consumption by reasonably biasing the gate and body terminals in a class-AB mode to adjust the threshold voltage of the NMOS transistors. The proposed CMOS VCO adopts the class-AB mode to improve the overall performance and the start-up condition. The figure-of-merit (FOM) and FOM with tuning range (FOMT) are used in evaluating the CMOS VCO performance. The measured phase noise at 1 MHz and 10 MHz offsets is –130.34 dBc/Hz and –150.96 dBc/Hz at the 3.38 GHz operating frequency, respectively. The proposed CMOS VCO has a tuning range between 2.85 and 3.62 GHz corresponding to 23.8% for the fifth-generation (5G) wireless communication applications. The proposed CMOS VCO core using a 1.4-V supply consumes 7.5 mW DC power. The FOMs and FOMTs at 1- and 10-MHz offsets are −192.2, −192.8, −199.7, and −200.3 dBc/Hz, respectively, from the 3.38 GHz output frequency.</description><subject>Adaptive control</subject><subject>Bias</subject><subject>Circuit design</subject><subject>CMOS</subject><subject>Complementary metal oxide semiconductors</subject><subject>Design and construction</subject><subject>Design specifications</subject><subject>Energy dissipation</subject><subject>Figure of merit</subject><subject>Metal oxide semiconductors</subject><subject>Methods</subject><subject>Offsets</subject><subject>Oscillators (Electronics)</subject><subject>Phase noise</subject><subject>Power consumption</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>Voltage controlled oscillators</subject><subject>Wireless communications</subject><issn>2079-9292</issn><issn>2079-9292</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNptUU1LAzEQXUTBUvsLvAQ8b50k-5E9lsUvqPRQ9bpMs5O6Jd3UJK34793SHjw4c5jH8N4bmJcktxymUlZwT5Z09K7vdOASBGQZXCQjAWWVVqISl3_wdTIJYQNDVVwqCaNkXb8uluzD2YhrSmvXD07WUssWQXfWYnSefXfxk9Vuu7O0pT6i_2HYt2zW4i52B2KLA_nWH9HZh5192DL6vY57T-EmuTJoA03Oc5y8Pz681c_pfPH0Us_mqZacxxRRKAVSG6VMmWOhcoUKKxAGoQAjFG9XVIJULYmizXIjATNQtBJliQUWcpzcnXx33n3tKcRm4_a-H042ouKqFBKAD6zpibVGS03XGxc96qFb2nba9WS6YT8rFagyy3k-CORJoL0LwZNpdr7bDp9oODTHFJp_UpC_LmZ-cA</recordid><startdate>20240101</startdate><enddate>20240101</enddate><creator>Chang, Yu-Hsin</creator><creator>Luo, Yong-Lun</creator><general>MDPI AG</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope></search><sort><creationdate>20240101</creationdate><title>CMOS Voltage-Controlled Oscillator with Complementary and Adaptive Overdrive Voltage Control Structures</title><author>Chang, Yu-Hsin ; 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The proposed CMOS VCO adopts a current-reused method, analog coarse and fine tuning mechanisms, and an adaptive overdrive voltage control structure to increase the overall performance, such as the power dissipation, phase noise, and tuning range, and has a robust start-up condition. The current-reused complementary structure with higher transistor transconductances is to save power consumption; the analog coarse and fine tuning mechanisms are to effectively widen the tuning range; and the adaptive overdrive voltage control technique is to change the transconductances of the transistors to improve power consumption by reasonably biasing the gate and body terminals in a class-AB mode to adjust the threshold voltage of the NMOS transistors. The proposed CMOS VCO adopts the class-AB mode to improve the overall performance and the start-up condition. The figure-of-merit (FOM) and FOM with tuning range (FOMT) are used in evaluating the CMOS VCO performance. The measured phase noise at 1 MHz and 10 MHz offsets is –130.34 dBc/Hz and –150.96 dBc/Hz at the 3.38 GHz operating frequency, respectively. The proposed CMOS VCO has a tuning range between 2.85 and 3.62 GHz corresponding to 23.8% for the fifth-generation (5G) wireless communication applications. The proposed CMOS VCO core using a 1.4-V supply consumes 7.5 mW DC power. The FOMs and FOMTs at 1- and 10-MHz offsets are −192.2, −192.8, −199.7, and −200.3 dBc/Hz, respectively, from the 3.38 GHz output frequency.</abstract><cop>Basel</cop><pub>MDPI AG</pub><doi>10.3390/electronics13020440</doi><oa>free_for_read</oa></addata></record> |
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subjects | Adaptive control Bias Circuit design CMOS Complementary metal oxide semiconductors Design and construction Design specifications Energy dissipation Figure of merit Metal oxide semiconductors Methods Offsets Oscillators (Electronics) Phase noise Power consumption Threshold voltage Transistors Voltage controlled oscillators Wireless communications |
title | CMOS Voltage-Controlled Oscillator with Complementary and Adaptive Overdrive Voltage Control Structures |
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