High-sensitive two-dimensional PbI2 photodetector with ultrashort channel
Photodetectors based on two-dimensional (2D) semiconductors have attracted many research interests owing to their excellent optoelectronic characteristics and application potential for highly integrated applications. However, the unique morphology of 2D materials also restricts the further improveme...
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| Veröffentlicht in: | Frontiers of physics 2023-12, Vol.18 (6), p.63305, Article 63305 |
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| creator | He, Kaiyue Zhu, Jijie Li, Zishun Chen, Zhe Zhang, Hehe Liu, Chao Zhang, Xu Wang, Shuo Zhao, Peiyi Zhou, Yu Zhang, Shizheng Yin, Yao Zheng, Xiaorui Huang, Wei Wang, Lin |
| description | Photodetectors based on two-dimensional (2D) semiconductors have attracted many research interests owing to their excellent optoelectronic characteristics and application potential for highly integrated applications. However, the unique morphology of 2D materials also restricts the further improvement of the device performance, as the carrier transport is very susceptible to intrinsic and extrinsic environment of the materials. Here, we report the highest responsivity (172 A/W) achieved so far for a PbI
2
-based photodetector at room temperature, which is an order of magnitude higher than previously reported. Thermal scanning probe lithography (t-SPL) was used to pattern electrodes to realize the ultrashort channel (~60 nm) in the device. The shortening of the channel length greatly reduces the probability of the photo-generated carriers being scattered during the transport process, which increases the photocurrent density and thus the responsivity. Our work shows that the combination of emerging processing technologies and 2D materials is an effective route to shrink device size and improve device performance. |
| doi_str_mv | 10.1007/s11467-023-1323-1 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2918650445</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2918650445</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-da610361562b8ac834159a99fe47e6bc1cd54d2c496d449710b14243100ff0b03</originalsourceid><addsrcrecordid>eNp1UMtOwzAQtBBIVKUfwC0SZ8Ou7TjNEVU8KlWCA5wtx3GaVGlcbJeKv8dREJy4zO5IM6PdIeQa4RYBiruAKGRBgXGKfIQzMmNQ5hREAee_u2SXZBHCDgAQC5H4jKyfu21Lgx1CF7tPm8WTo3W3H7kbdJ-9VmuWHVoXXW2jNdH57NTFNjv20evQOh8z0-phsP0VuWh0H-ziZ87J--PD2-qZbl6e1qv7DTUcZaS1lghcYi5ZtdRmyQXmpS7LxorCysqgqXNRMyNKWQtRFggVCiZ4erRpoAI-JzdT7sG7j6MNUe3c0adbg2IlLmUOQuRJhZPKeBeCt406-G6v_ZdCUGNpaipNpdLUWFqCOWGTJyTtsLX-L_l_0zceCm3v</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2918650445</pqid></control><display><type>article</type><title>High-sensitive two-dimensional PbI2 photodetector with ultrashort channel</title><source>SpringerLink Journals - AutoHoldings</source><source>ProQuest Central</source><creator>He, Kaiyue ; Zhu, Jijie ; Li, Zishun ; Chen, Zhe ; Zhang, Hehe ; Liu, Chao ; Zhang, Xu ; Wang, Shuo ; Zhao, Peiyi ; Zhou, Yu ; Zhang, Shizheng ; Yin, Yao ; Zheng, Xiaorui ; Huang, Wei ; Wang, Lin</creator><creatorcontrib>He, Kaiyue ; Zhu, Jijie ; Li, Zishun ; Chen, Zhe ; Zhang, Hehe ; Liu, Chao ; Zhang, Xu ; Wang, Shuo ; Zhao, Peiyi ; Zhou, Yu ; Zhang, Shizheng ; Yin, Yao ; Zheng, Xiaorui ; Huang, Wei ; Wang, Lin</creatorcontrib><description>Photodetectors based on two-dimensional (2D) semiconductors have attracted many research interests owing to their excellent optoelectronic characteristics and application potential for highly integrated applications. However, the unique morphology of 2D materials also restricts the further improvement of the device performance, as the carrier transport is very susceptible to intrinsic and extrinsic environment of the materials. Here, we report the highest responsivity (172 A/W) achieved so far for a PbI
2
-based photodetector at room temperature, which is an order of magnitude higher than previously reported. Thermal scanning probe lithography (t-SPL) was used to pattern electrodes to realize the ultrashort channel (~60 nm) in the device. The shortening of the channel length greatly reduces the probability of the photo-generated carriers being scattered during the transport process, which increases the photocurrent density and thus the responsivity. Our work shows that the combination of emerging processing technologies and 2D materials is an effective route to shrink device size and improve device performance.</description><identifier>ISSN: 2095-0462</identifier><identifier>EISSN: 2095-0470</identifier><identifier>DOI: 10.1007/s11467-023-1323-1</identifier><language>eng</language><publisher>Beijing: Higher Education Press</publisher><subject>Astronomy ; Astrophysics and Cosmology ; Atomic ; Carrier transport ; Condensed Matter Physics ; Electrodes ; Electrons ; Low dimensional semiconductors ; Molecular ; Optical and Plasma Physics ; Optoelectronics ; Particle and Nuclear Physics ; Photoelectric effect ; Photometers ; Physics ; Physics and Astronomy ; Research Article ; Room temperature ; Semiconductors ; Special Topic: Two-dimensional Electronic Materials and Devices ; Transistors ; Transport processes ; Two dimensional materials</subject><ispartof>Frontiers of physics, 2023-12, Vol.18 (6), p.63305, Article 63305</ispartof><rights>Higher Education Press 2023</rights><rights>Higher Education Press 2023.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-da610361562b8ac834159a99fe47e6bc1cd54d2c496d449710b14243100ff0b03</citedby><cites>FETCH-LOGICAL-c316t-da610361562b8ac834159a99fe47e6bc1cd54d2c496d449710b14243100ff0b03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11467-023-1323-1$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2918650445?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,776,780,21367,27901,27902,33721,41464,42533,43781,51294</link.rule.ids></links><search><creatorcontrib>He, Kaiyue</creatorcontrib><creatorcontrib>Zhu, Jijie</creatorcontrib><creatorcontrib>Li, Zishun</creatorcontrib><creatorcontrib>Chen, Zhe</creatorcontrib><creatorcontrib>Zhang, Hehe</creatorcontrib><creatorcontrib>Liu, Chao</creatorcontrib><creatorcontrib>Zhang, Xu</creatorcontrib><creatorcontrib>Wang, Shuo</creatorcontrib><creatorcontrib>Zhao, Peiyi</creatorcontrib><creatorcontrib>Zhou, Yu</creatorcontrib><creatorcontrib>Zhang, Shizheng</creatorcontrib><creatorcontrib>Yin, Yao</creatorcontrib><creatorcontrib>Zheng, Xiaorui</creatorcontrib><creatorcontrib>Huang, Wei</creatorcontrib><creatorcontrib>Wang, Lin</creatorcontrib><title>High-sensitive two-dimensional PbI2 photodetector with ultrashort channel</title><title>Frontiers of physics</title><addtitle>Front. Phys</addtitle><description>Photodetectors based on two-dimensional (2D) semiconductors have attracted many research interests owing to their excellent optoelectronic characteristics and application potential for highly integrated applications. However, the unique morphology of 2D materials also restricts the further improvement of the device performance, as the carrier transport is very susceptible to intrinsic and extrinsic environment of the materials. Here, we report the highest responsivity (172 A/W) achieved so far for a PbI
2
-based photodetector at room temperature, which is an order of magnitude higher than previously reported. Thermal scanning probe lithography (t-SPL) was used to pattern electrodes to realize the ultrashort channel (~60 nm) in the device. The shortening of the channel length greatly reduces the probability of the photo-generated carriers being scattered during the transport process, which increases the photocurrent density and thus the responsivity. Our work shows that the combination of emerging processing technologies and 2D materials is an effective route to shrink device size and improve device performance.</description><subject>Astronomy</subject><subject>Astrophysics and Cosmology</subject><subject>Atomic</subject><subject>Carrier transport</subject><subject>Condensed Matter Physics</subject><subject>Electrodes</subject><subject>Electrons</subject><subject>Low dimensional semiconductors</subject><subject>Molecular</subject><subject>Optical and Plasma Physics</subject><subject>Optoelectronics</subject><subject>Particle and Nuclear Physics</subject><subject>Photoelectric effect</subject><subject>Photometers</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Research Article</subject><subject>Room temperature</subject><subject>Semiconductors</subject><subject>Special Topic: Two-dimensional Electronic Materials and Devices</subject><subject>Transistors</subject><subject>Transport processes</subject><subject>Two dimensional materials</subject><issn>2095-0462</issn><issn>2095-0470</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp1UMtOwzAQtBBIVKUfwC0SZ8Ou7TjNEVU8KlWCA5wtx3GaVGlcbJeKv8dREJy4zO5IM6PdIeQa4RYBiruAKGRBgXGKfIQzMmNQ5hREAee_u2SXZBHCDgAQC5H4jKyfu21Lgx1CF7tPm8WTo3W3H7kbdJ-9VmuWHVoXXW2jNdH57NTFNjv20evQOh8z0-phsP0VuWh0H-ziZ87J--PD2-qZbl6e1qv7DTUcZaS1lghcYi5ZtdRmyQXmpS7LxorCysqgqXNRMyNKWQtRFggVCiZ4erRpoAI-JzdT7sG7j6MNUe3c0adbg2IlLmUOQuRJhZPKeBeCt406-G6v_ZdCUGNpaipNpdLUWFqCOWGTJyTtsLX-L_l_0zceCm3v</recordid><startdate>20231201</startdate><enddate>20231201</enddate><creator>He, Kaiyue</creator><creator>Zhu, Jijie</creator><creator>Li, Zishun</creator><creator>Chen, Zhe</creator><creator>Zhang, Hehe</creator><creator>Liu, Chao</creator><creator>Zhang, Xu</creator><creator>Wang, Shuo</creator><creator>Zhao, Peiyi</creator><creator>Zhou, Yu</creator><creator>Zhang, Shizheng</creator><creator>Yin, Yao</creator><creator>Zheng, Xiaorui</creator><creator>Huang, Wei</creator><creator>Wang, Lin</creator><general>Higher Education Press</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABUWG</scope><scope>AEUYN</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BHPHI</scope><scope>BKSAR</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>M2P</scope><scope>P5Z</scope><scope>P62</scope><scope>PCBAR</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>Q9U</scope></search><sort><creationdate>20231201</creationdate><title>High-sensitive two-dimensional PbI2 photodetector with ultrashort channel</title><author>He, Kaiyue ; Zhu, Jijie ; Li, Zishun ; Chen, Zhe ; Zhang, Hehe ; Liu, Chao ; Zhang, Xu ; Wang, Shuo ; Zhao, Peiyi ; Zhou, Yu ; Zhang, Shizheng ; Yin, Yao ; Zheng, Xiaorui ; Huang, Wei ; Wang, Lin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-da610361562b8ac834159a99fe47e6bc1cd54d2c496d449710b14243100ff0b03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Astronomy</topic><topic>Astrophysics and Cosmology</topic><topic>Atomic</topic><topic>Carrier transport</topic><topic>Condensed Matter Physics</topic><topic>Electrodes</topic><topic>Electrons</topic><topic>Low dimensional semiconductors</topic><topic>Molecular</topic><topic>Optical and Plasma Physics</topic><topic>Optoelectronics</topic><topic>Particle and Nuclear Physics</topic><topic>Photoelectric effect</topic><topic>Photometers</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Research Article</topic><topic>Room temperature</topic><topic>Semiconductors</topic><topic>Special Topic: Two-dimensional Electronic Materials and Devices</topic><topic>Transistors</topic><topic>Transport processes</topic><topic>Two dimensional materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>He, Kaiyue</creatorcontrib><creatorcontrib>Zhu, Jijie</creatorcontrib><creatorcontrib>Li, Zishun</creatorcontrib><creatorcontrib>Chen, Zhe</creatorcontrib><creatorcontrib>Zhang, Hehe</creatorcontrib><creatorcontrib>Liu, Chao</creatorcontrib><creatorcontrib>Zhang, Xu</creatorcontrib><creatorcontrib>Wang, Shuo</creatorcontrib><creatorcontrib>Zhao, Peiyi</creatorcontrib><creatorcontrib>Zhou, Yu</creatorcontrib><creatorcontrib>Zhang, Shizheng</creatorcontrib><creatorcontrib>Yin, Yao</creatorcontrib><creatorcontrib>Zheng, Xiaorui</creatorcontrib><creatorcontrib>Huang, Wei</creatorcontrib><creatorcontrib>Wang, Lin</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest One Sustainability</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>Natural Science Collection</collection><collection>Earth, Atmospheric & Aquatic Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>Science Database</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Earth, Atmospheric & Aquatic Science Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central Basic</collection><jtitle>Frontiers of physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>He, Kaiyue</au><au>Zhu, Jijie</au><au>Li, Zishun</au><au>Chen, Zhe</au><au>Zhang, Hehe</au><au>Liu, Chao</au><au>Zhang, Xu</au><au>Wang, Shuo</au><au>Zhao, Peiyi</au><au>Zhou, Yu</au><au>Zhang, Shizheng</au><au>Yin, Yao</au><au>Zheng, Xiaorui</au><au>Huang, Wei</au><au>Wang, Lin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-sensitive two-dimensional PbI2 photodetector with ultrashort channel</atitle><jtitle>Frontiers of physics</jtitle><stitle>Front. Phys</stitle><date>2023-12-01</date><risdate>2023</risdate><volume>18</volume><issue>6</issue><spage>63305</spage><pages>63305-</pages><artnum>63305</artnum><issn>2095-0462</issn><eissn>2095-0470</eissn><abstract>Photodetectors based on two-dimensional (2D) semiconductors have attracted many research interests owing to their excellent optoelectronic characteristics and application potential for highly integrated applications. However, the unique morphology of 2D materials also restricts the further improvement of the device performance, as the carrier transport is very susceptible to intrinsic and extrinsic environment of the materials. Here, we report the highest responsivity (172 A/W) achieved so far for a PbI
2
-based photodetector at room temperature, which is an order of magnitude higher than previously reported. Thermal scanning probe lithography (t-SPL) was used to pattern electrodes to realize the ultrashort channel (~60 nm) in the device. The shortening of the channel length greatly reduces the probability of the photo-generated carriers being scattered during the transport process, which increases the photocurrent density and thus the responsivity. Our work shows that the combination of emerging processing technologies and 2D materials is an effective route to shrink device size and improve device performance.</abstract><cop>Beijing</cop><pub>Higher Education Press</pub><doi>10.1007/s11467-023-1323-1</doi></addata></record> |
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| subjects | Astronomy Astrophysics and Cosmology Atomic Carrier transport Condensed Matter Physics Electrodes Electrons Low dimensional semiconductors Molecular Optical and Plasma Physics Optoelectronics Particle and Nuclear Physics Photoelectric effect Photometers Physics Physics and Astronomy Research Article Room temperature Semiconductors Special Topic: Two-dimensional Electronic Materials and Devices Transistors Transport processes Two dimensional materials |
| title | High-sensitive two-dimensional PbI2 photodetector with ultrashort channel |
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