Effects of BaTiO3 and SrTiO3 as the buffer layers of epitaxial BiFeO3 thin films
BiFeO3 （BFO） thin films with BaTiO3 （BTO） or SrTiO3 （STO） as buffer layer were epitaxially grown on SrRuO3-covered SrTiO3 substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelect...
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| Veröffentlicht in: | Science China. Physics, mechanics & astronomy mechanics & astronomy, 2017-06, Vol.60 (6), p.69-73, Article 067711 |
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| container_title | Science China. Physics, mechanics & astronomy |
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| creator | Feng, Yu Wang, Can Tian, ShiLu Zhou, Yong Ge, Chen Guo, HaiZhong He, Meng Jin, KuiJuan Yang, GuoZhen |
| description | BiFeO3 （BFO） thin films with BaTiO3 （BTO） or SrTiO3 （STO） as buffer layer were epitaxially grown on SrRuO3-covered SrTiO3 substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelectric domain structures caused by these two strain statuses are revealed by piezoelectric force microscopy. Electrical and magnetical measurements show that the tensile-strained BFO/BTO samples have reduced leakage current and large ferroelectric polarization and magnetization, compared with compressively strained BFO/STO. These results demonstrate that the electrical and magnetical properties of BFO thin films can be artificially modified by using a buffer layer. |
| doi_str_mv | 10.1007/s11433-017-9020-8 |
| format | Article |
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X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelectric domain structures caused by these two strain statuses are revealed by piezoelectric force microscopy. Electrical and magnetical measurements show that the tensile-strained BFO/BTO samples have reduced leakage current and large ferroelectric polarization and magnetization, compared with compressively strained BFO/STO. These results demonstrate that the electrical and magnetical properties of BFO thin films can be artificially modified by using a buffer layer.</description><identifier>ISSN: 1674-7348</identifier><identifier>EISSN: 1869-1927</identifier><identifier>DOI: 10.1007/s11433-017-9020-8</identifier><language>eng</language><publisher>Beijing: Science China Press</publisher><subject>Astronomy ; Barium titanates ; BaTiO3 ; BiFeO3薄膜 ; Buffer layers ; Classical and Continuum Physics ; Compressive properties ; Epitaxial growth ; Ferroelectric domains ; Ferroelectric materials ; Ferroelectricity ; Information storage ; Leakage current ; Magnetic properties ; Microscopy ; Observations and Techniques ; Physical properties ; Physics ; Physics and Astronomy ; Piezoelectricity ; SrTiO3 ; Strontium titanates ; Substrates ; Tensile strain ; Thin films ; X-ray diffraction ; X射线衍射测量 ; 拉伸应变 ; 缓冲层 ; 钛酸钡薄膜 ; 铁电畴结构</subject><ispartof>Science China. Physics, mechanics & astronomy, 2017-06, Vol.60 (6), p.69-73, Article 067711</ispartof><rights>Science China Press and Springer-Verlag Berlin Heidelberg 2017</rights><rights>Science China Press and Springer-Verlag Berlin Heidelberg 2017.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c343t-f3d0920bd2fc076b92f571e6814359accee587addfe3b83e8350e71130e768b53</citedby><cites>FETCH-LOGICAL-c343t-f3d0920bd2fc076b92f571e6814359accee587addfe3b83e8350e71130e768b53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/60109X/60109X.jpg</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11433-017-9020-8$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11433-017-9020-8$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Feng, Yu</creatorcontrib><creatorcontrib>Wang, Can</creatorcontrib><creatorcontrib>Tian, ShiLu</creatorcontrib><creatorcontrib>Zhou, Yong</creatorcontrib><creatorcontrib>Ge, Chen</creatorcontrib><creatorcontrib>Guo, HaiZhong</creatorcontrib><creatorcontrib>He, Meng</creatorcontrib><creatorcontrib>Jin, KuiJuan</creatorcontrib><creatorcontrib>Yang, GuoZhen</creatorcontrib><title>Effects of BaTiO3 and SrTiO3 as the buffer layers of epitaxial BiFeO3 thin films</title><title>Science China. Physics, mechanics & astronomy</title><addtitle>Sci. China Phys. Mech. Astron</addtitle><addtitle>SCIENCE CHINA Physics, Mechanics ＆ Astronomy</addtitle><description>BiFeO3 （BFO） thin films with BaTiO3 （BTO） or SrTiO3 （STO） as buffer layer were epitaxially grown on SrRuO3-covered SrTiO3 substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelectric domain structures caused by these two strain statuses are revealed by piezoelectric force microscopy. Electrical and magnetical measurements show that the tensile-strained BFO/BTO samples have reduced leakage current and large ferroelectric polarization and magnetization, compared with compressively strained BFO/STO. These results demonstrate that the electrical and magnetical properties of BFO thin films can be artificially modified by using a buffer layer.</description><subject>Astronomy</subject><subject>Barium titanates</subject><subject>BaTiO3</subject><subject>BiFeO3薄膜</subject><subject>Buffer layers</subject><subject>Classical and Continuum Physics</subject><subject>Compressive properties</subject><subject>Epitaxial growth</subject><subject>Ferroelectric domains</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Information storage</subject><subject>Leakage current</subject><subject>Magnetic properties</subject><subject>Microscopy</subject><subject>Observations and Techniques</subject><subject>Physical properties</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Piezoelectricity</subject><subject>SrTiO3</subject><subject>Strontium titanates</subject><subject>Substrates</subject><subject>Tensile strain</subject><subject>Thin films</subject><subject>X-ray diffraction</subject><subject>X射线衍射测量</subject><subject>拉伸应变</subject><subject>缓冲层</subject><subject>钛酸钡薄膜</subject><subject>铁电畴结构</subject><issn>1674-7348</issn><issn>1869-1927</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kEFPAjEQhRujiQT5Ad4aPVfbzu62PQoBNCHBRDw33d0Wliy70C6J_HuLS_TmHGbm8L15mYfQPaNPjFLxHBhLAAhlgijKKZFXaMBkpghTXFzHPRMJEZDIWzQKYUtjgaKJSAbofeqcLbqAW4fHZlUtAZumxB--XwPuNhbnxwh5XJuT9T-k3Ved-apMjcfVzEaw21QNdlW9C3foxpk62NFlDtHnbLqavJLFcv42eVmQAhLoiIOSKk7zkruCiixX3KWC2UzGT1JlisLaVApTls5CLsFKSKkVjEHsmcxTGKLH_u7et4ejDZ3etkffREvNVXyeCy55pFhPFb4NwVun977aGX_SjOpzdrrPTsfs9Dk7LaOG95oQ2WZt_d_l_0QPF6NN26wPUffrlAnOqFIS4BsZH3oC</recordid><startdate>20170601</startdate><enddate>20170601</enddate><creator>Feng, Yu</creator><creator>Wang, Can</creator><creator>Tian, ShiLu</creator><creator>Zhou, Yong</creator><creator>Ge, Chen</creator><creator>Guo, HaiZhong</creator><creator>He, Meng</creator><creator>Jin, KuiJuan</creator><creator>Yang, GuoZhen</creator><general>Science China Press</general><general>Springer Nature B.V</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AEUYN</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BHPHI</scope><scope>BKSAR</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PCBAR</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope></search><sort><creationdate>20170601</creationdate><title>Effects of BaTiO3 and SrTiO3 as the buffer layers of epitaxial BiFeO3 thin films</title><author>Feng, Yu ; Wang, Can ; Tian, ShiLu ; Zhou, Yong ; Ge, Chen ; Guo, HaiZhong ; He, Meng ; Jin, KuiJuan ; Yang, GuoZhen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c343t-f3d0920bd2fc076b92f571e6814359accee587addfe3b83e8350e71130e768b53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Astronomy</topic><topic>Barium titanates</topic><topic>BaTiO3</topic><topic>BiFeO3薄膜</topic><topic>Buffer layers</topic><topic>Classical and Continuum Physics</topic><topic>Compressive properties</topic><topic>Epitaxial growth</topic><topic>Ferroelectric domains</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Information storage</topic><topic>Leakage current</topic><topic>Magnetic properties</topic><topic>Microscopy</topic><topic>Observations and Techniques</topic><topic>Physical properties</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Piezoelectricity</topic><topic>SrTiO3</topic><topic>Strontium titanates</topic><topic>Substrates</topic><topic>Tensile strain</topic><topic>Thin films</topic><topic>X-ray diffraction</topic><topic>X射线衍射测量</topic><topic>拉伸应变</topic><topic>缓冲层</topic><topic>钛酸钡薄膜</topic><topic>铁电畴结构</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Feng, Yu</creatorcontrib><creatorcontrib>Wang, Can</creatorcontrib><creatorcontrib>Tian, ShiLu</creatorcontrib><creatorcontrib>Zhou, Yong</creatorcontrib><creatorcontrib>Ge, Chen</creatorcontrib><creatorcontrib>Guo, HaiZhong</creatorcontrib><creatorcontrib>He, Meng</creatorcontrib><creatorcontrib>Jin, KuiJuan</creatorcontrib><creatorcontrib>Yang, GuoZhen</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest One Sustainability</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>Natural Science Collection</collection><collection>Earth, Atmospheric & Aquatic Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Earth, Atmospheric & Aquatic Science Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><jtitle>Science China. Physics, mechanics & astronomy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Feng, Yu</au><au>Wang, Can</au><au>Tian, ShiLu</au><au>Zhou, Yong</au><au>Ge, Chen</au><au>Guo, HaiZhong</au><au>He, Meng</au><au>Jin, KuiJuan</au><au>Yang, GuoZhen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of BaTiO3 and SrTiO3 as the buffer layers of epitaxial BiFeO3 thin films</atitle><jtitle>Science China. Physics, mechanics & astronomy</jtitle><stitle>Sci. China Phys. Mech. Astron</stitle><addtitle>SCIENCE CHINA Physics, Mechanics ＆ Astronomy</addtitle><date>2017-06-01</date><risdate>2017</risdate><volume>60</volume><issue>6</issue><spage>69</spage><epage>73</epage><pages>69-73</pages><artnum>067711</artnum><issn>1674-7348</issn><eissn>1869-1927</eissn><abstract>BiFeO3 （BFO） thin films with BaTiO3 （BTO） or SrTiO3 （STO） as buffer layer were epitaxially grown on SrRuO3-covered SrTiO3 substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelectric domain structures caused by these two strain statuses are revealed by piezoelectric force microscopy. Electrical and magnetical measurements show that the tensile-strained BFO/BTO samples have reduced leakage current and large ferroelectric polarization and magnetization, compared with compressively strained BFO/STO. These results demonstrate that the electrical and magnetical properties of BFO thin films can be artificially modified by using a buffer layer.</abstract><cop>Beijing</cop><pub>Science China Press</pub><doi>10.1007/s11433-017-9020-8</doi><tpages>5</tpages></addata></record> |
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| subjects | Astronomy Barium titanates BaTiO3 BiFeO3薄膜 Buffer layers Classical and Continuum Physics Compressive properties Epitaxial growth Ferroelectric domains Ferroelectric materials Ferroelectricity Information storage Leakage current Magnetic properties Microscopy Observations and Techniques Physical properties Physics Physics and Astronomy Piezoelectricity SrTiO3 Strontium titanates Substrates Tensile strain Thin films X-ray diffraction X射线衍射测量 拉伸应变 缓冲层 钛酸钡薄膜 铁电畴结构 |
| title | Effects of BaTiO3 and SrTiO3 as the buffer layers of epitaxial BiFeO3 thin films |
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