Enhanced performance of field-effect transistors based on C60 single crystals with conjugated polyelectrolyte
Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors, leading to a distinct voltage drop at the interface. Here, we demonstrate enhanced performance of n-channel field-effect transistors based on s...
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| Veröffentlicht in: | Science China. Chemistry 2017-04, Vol.60 (4), p.490-496 |
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| container_title | Science China. Chemistry |
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| creator | Li, Qinfen Wu, Jiake Wu, Ruihan Liu, Yujing Chen, Hongzheng Huang, Fei Li, Hanying |
| description | Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors, leading to a distinct voltage drop at the interface. Here, we demonstrate enhanced performance of n-channel field-effect transistors based on solution-grown C60 single-crystalline ribbons by introducing an interlayer of a conjugated polyelectrolyte （CPE） composed of poly[（9,9-bis（3＇-（（N,N-dimethyl）-N-ethylammonium）-propyl）-2,7-fluorene）- alt-2,7-（9,9-dioctylfluorene）] dibromide （PFN＋Br-）. The PFN＋Br- interlayer greatly improves the charge injection. Consequently, the electron mobility is promoted up to 5.60 cm2 V-1 s-1 and the threshold voltage decreased dramatically with the minimum of 4.90 V. |
| doi_str_mv | 10.1007/s11426-016-9018-y |
| format | Article |
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Here, we demonstrate enhanced performance of n-channel field-effect transistors based on solution-grown C60 single-crystalline ribbons by introducing an interlayer of a conjugated polyelectrolyte （CPE） composed of poly[（9,9-bis（3＇-（（N,N-dimethyl）-N-ethylammonium）-propyl）-2,7-fluorene）- alt-2,7-（9,9-dioctylfluorene）] dibromide （PFN＋Br-）. The PFN＋Br- interlayer greatly improves the charge injection. Consequently, the electron mobility is promoted up to 5.60 cm2 V-1 s-1 and the threshold voltage decreased dramatically with the minimum of 4.90 V.</description><identifier>ISSN: 1674-7291</identifier><identifier>EISSN: 1869-1870</identifier><identifier>DOI: 10.1007/s11426-016-9018-y</identifier><language>eng</language><publisher>Beijing: Science China Press</publisher><subject>C60单晶 ; Charge injection ; Chemistry ; Chemistry and Materials Science ; Chemistry/Food Science ; Contact resistance ; Crystallization ; Electrodes ; Electron microscopes ; Electron mobility ; Field effect transistors ; Interfaces ; Interlayers ; Molecular structure ; Morphology ; Performance enhancement ; Polyelectrolytes ; Semiconductor devices ; Semiconductors ; Silicon wafers ; Single crystals ; Threshold voltage ; Transistors ; Voltage drop ; 共轭 ; 增强性能 ; 接触电阻 ; 有机场效应晶体管 ; 电子迁移率 ; 聚电解质溶液 ; 金属电极</subject><ispartof>Science China. Chemistry, 2017-04, Vol.60 (4), p.490-496</ispartof><rights>Science China Press and Springer-Verlag Berlin Heidelberg 2017</rights><rights>Science China Press and Springer-Verlag Berlin Heidelberg 2017.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c258y-bc79d20d63ada301fef010ab86ec97aeaf16baba3e8fffeb73cb15ee0fe5f3993</citedby><cites>FETCH-LOGICAL-c258y-bc79d20d63ada301fef010ab86ec97aeaf16baba3e8fffeb73cb15ee0fe5f3993</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/60113X/60113X.jpg</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11426-016-9018-y$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2918587743?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,778,782,21375,21376,21377,21378,23243,27911,27912,33517,33690,33731,33992,34301,41475,42544,43646,43774,43792,43940,44054,51306,64370,64374,72226</link.rule.ids></links><search><creatorcontrib>Li, Qinfen</creatorcontrib><creatorcontrib>Wu, Jiake</creatorcontrib><creatorcontrib>Wu, Ruihan</creatorcontrib><creatorcontrib>Liu, Yujing</creatorcontrib><creatorcontrib>Chen, Hongzheng</creatorcontrib><creatorcontrib>Huang, Fei</creatorcontrib><creatorcontrib>Li, Hanying</creatorcontrib><title>Enhanced performance of field-effect transistors based on C60 single crystals with conjugated polyelectrolyte</title><title>Science China. Chemistry</title><addtitle>Sci. China Chem</addtitle><addtitle>SCIENCE CHINA Chemistry</addtitle><description>Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors, leading to a distinct voltage drop at the interface. Here, we demonstrate enhanced performance of n-channel field-effect transistors based on solution-grown C60 single-crystalline ribbons by introducing an interlayer of a conjugated polyelectrolyte （CPE） composed of poly[（9,9-bis（3＇-（（N,N-dimethyl）-N-ethylammonium）-propyl）-2,7-fluorene）- alt-2,7-（9,9-dioctylfluorene）] dibromide （PFN＋Br-）. The PFN＋Br- interlayer greatly improves the charge injection. Consequently, the electron mobility is promoted up to 5.60 cm2 V-1 s-1 and the threshold voltage decreased dramatically with the minimum of 4.90 V.</description><subject>C60单晶</subject><subject>Charge injection</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Chemistry/Food Science</subject><subject>Contact resistance</subject><subject>Crystallization</subject><subject>Electrodes</subject><subject>Electron microscopes</subject><subject>Electron mobility</subject><subject>Field effect transistors</subject><subject>Interfaces</subject><subject>Interlayers</subject><subject>Molecular structure</subject><subject>Morphology</subject><subject>Performance enhancement</subject><subject>Polyelectrolytes</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>Silicon wafers</subject><subject>Single crystals</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>Voltage drop</subject><subject>共轭</subject><subject>增强性能</subject><subject>接触电阻</subject><subject>有机场效应晶体管</subject><subject>电子迁移率</subject><subject>聚电解质溶液</subject><subject>金属电极</subject><issn>1674-7291</issn><issn>1869-1870</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNp9kM1OAyEUhYnRxEb7AO6IrlEYOsAsTVN_kiZudE0Y5jKdZgotTGPm7WXSRney4ZJ855zLQeiO0UdGqXxKjC0KQSgTpKJMkfECzZgSFWFK0ss8C7kgsqjYNZqntKX5cE4LWc7QbuU3xlto8B6iC3E3PXBw2HXQNwScAzvgIRqfujSEmHBtUqaDx0tBcep82wO2cUyD6RP-7oYNtsFvj60ZJtPQj9Bni5iHAW7RlcsYzM_3Dfp6WX0u38j64_V9-bwmtijVSGorq6agjeCmMZwyB44yamolwFbSgHFM1KY2HJTLC9aS25qVANRB6XhV8Rv0cPLdx3A4Qhr0Nhyjz5E6t6BKJeWCZ4qdKBtDShGc3sduZ-KoGdVTsfpUrM7F6qlYPWZNcdKkzPoW4p_zf6L7c9Am-PaQdb9JQjKZ_0wF_wFb84qA</recordid><startdate>20170401</startdate><enddate>20170401</enddate><creator>Li, Qinfen</creator><creator>Wu, Jiake</creator><creator>Wu, Ruihan</creator><creator>Liu, Yujing</creator><creator>Chen, Hongzheng</creator><creator>Huang, Fei</creator><creator>Li, Hanying</creator><general>Science China Press</general><general>Springer Nature B.V</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>M2P</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>Q9U</scope></search><sort><creationdate>20170401</creationdate><title>Enhanced performance of field-effect transistors based on C60 single crystals with conjugated polyelectrolyte</title><author>Li, Qinfen ; Wu, Jiake ; Wu, Ruihan ; Liu, Yujing ; Chen, Hongzheng ; Huang, Fei ; Li, Hanying</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c258y-bc79d20d63ada301fef010ab86ec97aeaf16baba3e8fffeb73cb15ee0fe5f3993</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>C60单晶</topic><topic>Charge injection</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Chemistry/Food Science</topic><topic>Contact resistance</topic><topic>Crystallization</topic><topic>Electrodes</topic><topic>Electron microscopes</topic><topic>Electron mobility</topic><topic>Field effect transistors</topic><topic>Interfaces</topic><topic>Interlayers</topic><topic>Molecular structure</topic><topic>Morphology</topic><topic>Performance enhancement</topic><topic>Polyelectrolytes</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><topic>Silicon wafers</topic><topic>Single crystals</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>Voltage drop</topic><topic>共轭</topic><topic>增强性能</topic><topic>接触电阻</topic><topic>有机场效应晶体管</topic><topic>电子迁移率</topic><topic>聚电解质溶液</topic><topic>金属电极</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Qinfen</creatorcontrib><creatorcontrib>Wu, Jiake</creatorcontrib><creatorcontrib>Wu, Ruihan</creatorcontrib><creatorcontrib>Liu, Yujing</creatorcontrib><creatorcontrib>Chen, Hongzheng</creatorcontrib><creatorcontrib>Huang, Fei</creatorcontrib><creatorcontrib>Li, Hanying</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>Science Database (ProQuest)</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central Basic</collection><jtitle>Science China. Chemistry</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Qinfen</au><au>Wu, Jiake</au><au>Wu, Ruihan</au><au>Liu, Yujing</au><au>Chen, Hongzheng</au><au>Huang, Fei</au><au>Li, Hanying</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced performance of field-effect transistors based on C60 single crystals with conjugated polyelectrolyte</atitle><jtitle>Science China. Chemistry</jtitle><stitle>Sci. China Chem</stitle><addtitle>SCIENCE CHINA Chemistry</addtitle><date>2017-04-01</date><risdate>2017</risdate><volume>60</volume><issue>4</issue><spage>490</spage><epage>496</epage><pages>490-496</pages><issn>1674-7291</issn><eissn>1869-1870</eissn><abstract>Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors, leading to a distinct voltage drop at the interface. Here, we demonstrate enhanced performance of n-channel field-effect transistors based on solution-grown C60 single-crystalline ribbons by introducing an interlayer of a conjugated polyelectrolyte （CPE） composed of poly[（9,9-bis（3＇-（（N,N-dimethyl）-N-ethylammonium）-propyl）-2,7-fluorene）- alt-2,7-（9,9-dioctylfluorene）] dibromide （PFN＋Br-）. The PFN＋Br- interlayer greatly improves the charge injection. Consequently, the electron mobility is promoted up to 5.60 cm2 V-1 s-1 and the threshold voltage decreased dramatically with the minimum of 4.90 V.</abstract><cop>Beijing</cop><pub>Science China Press</pub><doi>10.1007/s11426-016-9018-y</doi><tpages>7</tpages></addata></record> |
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| ispartof | Science China. Chemistry, 2017-04, Vol.60 (4), p.490-496 |
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| subjects | C60单晶 Charge injection Chemistry Chemistry and Materials Science Chemistry/Food Science Contact resistance Crystallization Electrodes Electron microscopes Electron mobility Field effect transistors Interfaces Interlayers Molecular structure Morphology Performance enhancement Polyelectrolytes Semiconductor devices Semiconductors Silicon wafers Single crystals Threshold voltage Transistors Voltage drop 共轭 增强性能 接触电阻 有机场效应晶体管 电子迁移率 聚电解质溶液 金属电极 |
| title | Enhanced performance of field-effect transistors based on C60 single crystals with conjugated polyelectrolyte |
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