Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy

Surface potentials in the vicinity of V-pits (cone bottom) and U-pits (blunt bottom) on epitaxial GaN surface have been systematically studied using ultraviolet (UV) light-assisted Kelvin probe force microscopy (KPFM). The band structure models are established to understand variation of the surface...

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Veröffentlicht in:	Science China. Physics, mechanics & astronomy mechanics & astronomy, 2019-06, Vol.62 (6), p.67311, Article 67311
Hauptverfasser:	Kai, CuiHong, Sun, XiaoJuan, Jia, YuPing, Shi, ZhiMing, Jiang, Ke, Ben, JianWei, Wu, You, Wang, Yong, Liu, HeNan, Li, XiaoHang, Li, DaBing
Format:	Artikel
Sprache:	eng
Schlagworte:	Astronomy Carrier recombination Classical and Continuum Physics Defects Microscopy Observations and Techniques Physics Physics and Astronomy Pits Ultraviolet radiation
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