Fabrication of 0.3-μm T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition

We present an InGaAs metamorphic high electron mobility transistor （mHEMT） grown using Metalorganic Chemical Vapor Deposition （MOCVD） on an n-type silicon substrate with the introduction of an effective multi-stage buffering scheme. Fabrication and performance of a high-frequency 0.3μm gate-length d...

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