Valence electronic structure of tantalum carbide and nitride
The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength o...
Gespeichert in:
| Veröffentlicht in: | Science China. Physics, mechanics & astronomy mechanics & astronomy, 2007-12, Vol.50 (6), p.737-741 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 741 |
|---|---|
| container_issue | 6 |
| container_start_page | 737 |
| container_title | Science China. Physics, mechanics & astronomy |
| container_volume | 50 |
| creator | Fan, ChangZeng Sun, LiLing Wei, ZunJie Ma, Mingzhen Liu, RiPing Zeng, SongYan Wang, WenKui |
| description | The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.…… |
| doi_str_mv | 10.1007/s11433-007-0078-y |
| format | Article |
| fullrecord | <record><control><sourceid>wanfang_jour_proqu</sourceid><recordid>TN_cdi_proquest_journals_2918545902</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>1000887450</cqvip_id><wanfj_id>zgkx_eg200706007</wanfj_id><sourcerecordid>zgkx_eg200706007</sourcerecordid><originalsourceid>FETCH-LOGICAL-c366t-f191c2aaefb22fd2f83c1a4ad7016aeb40cd4172568a65d95d16fe0a3c98096b3</originalsourceid><addsrcrecordid>eNpdkF1LwzAUhosoOOZ-gHcFRbyp5qtpAt7I8AsG3qi34TRNarcu3ZIWnb_elA0vDCTnvXjec07eJDnH6AYjVNwGjBmlWZTjFdnuKJlgwWWGJSmOo-YFywrKxGkyC2GJ4qESsYJNkrsPaI3TJjWt0b3vXKPT0PtB94M3aWfTHlwP7bBONfiyqUwKrkpd0_uoz5ITC20ws0OdJu-PD2_z52zx-vQyv19kmnLeZxZLrAmAsSUhtiJWUI2BQVUgzMGUDOmK4YLkXADPK5lXmFuDgGopkOQlnSbX-75f4Cy4Wi27wbs4Uf3Uq29lahK_jXh8Inq1Rze-2w4m9GrdBG3aFpzphqAoFkIgxiJ48Q_8a0okFjnLJSKRwntK-y4Eb6za-GYNfqcwUmP2ap-9GuWYvdpFz-XB89m5etvEfUvQK9u0ZrQgIQqWI_oLFxiB3g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2918545902</pqid></control><display><type>article</type><title>Valence electronic structure of tantalum carbide and nitride</title><source>Springer Nature - Complete Springer Journals</source><source>Alma/SFX Local Collection</source><creator>Fan, ChangZeng ; Sun, LiLing ; Wei, ZunJie ; Ma, Mingzhen ; Liu, RiPing ; Zeng, SongYan ; Wang, WenKui</creator><creatorcontrib>Fan, ChangZeng ; Sun, LiLing ; Wei, ZunJie ; Ma, Mingzhen ; Liu, RiPing ; Zeng, SongYan ; Wang, WenKui</creatorcontrib><description>The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.……</description><identifier>ISSN: 1674-7348</identifier><identifier>ISSN: 1672-1799</identifier><identifier>EISSN: 1869-1927</identifier><identifier>EISSN: 1862-2844</identifier><identifier>DOI: 10.1007/s11433-007-0078-y</identifier><language>eng</language><publisher>Beijing: Springer Nature B.V</publisher><subject>All ; also ; analysis ; and ; are ; been ; bond ; bonds ; calculated ; carbide ; characters ; Chemical bonds ; coincides ; components ; compounds ; Covalence ; covalent ; Covalent bonds ; deduced ; EET ; electronic ; Electronic structure ; empirical ; Empirical analysis ; First principles ; For ; former ; found ; from ; has ; have ; implanting ; ionic ; ionicities ; ionicity ; larger ; latter ; metallic ; method. ; nitride ; number ; PVL ; quantitative ; relative ; results ; reveal ; smaller ; strength ; stronger ; strongest ; structure ; structures ; studied ; suggest ; TaC ; TaN ; Tantalum ; Tantalum carbide ; Tantalum nitrides ; than ; that ; The ; their ; theory ; these ; using ; valence ; which</subject><ispartof>Science China. Physics, mechanics & astronomy, 2007-12, Vol.50 (6), p.737-741</ispartof><rights>Science in China Press 2007.</rights><rights>Copyright © Wanfang Data Co. Ltd. All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c366t-f191c2aaefb22fd2f83c1a4ad7016aeb40cd4172568a65d95d16fe0a3c98096b3</citedby><cites>FETCH-LOGICAL-c366t-f191c2aaefb22fd2f83c1a4ad7016aeb40cd4172568a65d95d16fe0a3c98096b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/60109X/60109X.jpg</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Fan, ChangZeng</creatorcontrib><creatorcontrib>Sun, LiLing</creatorcontrib><creatorcontrib>Wei, ZunJie</creatorcontrib><creatorcontrib>Ma, Mingzhen</creatorcontrib><creatorcontrib>Liu, RiPing</creatorcontrib><creatorcontrib>Zeng, SongYan</creatorcontrib><creatorcontrib>Wang, WenKui</creatorcontrib><title>Valence electronic structure of tantalum carbide and nitride</title><title>Science China. Physics, mechanics & astronomy</title><description>The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.……</description><subject>All</subject><subject>also</subject><subject>analysis</subject><subject>and</subject><subject>are</subject><subject>been</subject><subject>bond</subject><subject>bonds</subject><subject>calculated</subject><subject>carbide</subject><subject>characters</subject><subject>Chemical bonds</subject><subject>coincides</subject><subject>components</subject><subject>compounds</subject><subject>Covalence</subject><subject>covalent</subject><subject>Covalent bonds</subject><subject>deduced</subject><subject>EET</subject><subject>electronic</subject><subject>Electronic structure</subject><subject>empirical</subject><subject>Empirical analysis</subject><subject>First principles</subject><subject>For</subject><subject>former</subject><subject>found</subject><subject>from</subject><subject>has</subject><subject>have</subject><subject>implanting</subject><subject>ionic</subject><subject>ionicities</subject><subject>ionicity</subject><subject>larger</subject><subject>latter</subject><subject>metallic</subject><subject>method.</subject><subject>nitride</subject><subject>number</subject><subject>PVL</subject><subject>quantitative</subject><subject>relative</subject><subject>results</subject><subject>reveal</subject><subject>smaller</subject><subject>strength</subject><subject>stronger</subject><subject>strongest</subject><subject>structure</subject><subject>structures</subject><subject>studied</subject><subject>suggest</subject><subject>TaC</subject><subject>TaN</subject><subject>Tantalum</subject><subject>Tantalum carbide</subject><subject>Tantalum nitrides</subject><subject>than</subject><subject>that</subject><subject>The</subject><subject>their</subject><subject>theory</subject><subject>these</subject><subject>using</subject><subject>valence</subject><subject>which</subject><issn>1674-7348</issn><issn>1672-1799</issn><issn>1869-1927</issn><issn>1862-2844</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNpdkF1LwzAUhosoOOZ-gHcFRbyp5qtpAt7I8AsG3qi34TRNarcu3ZIWnb_elA0vDCTnvXjec07eJDnH6AYjVNwGjBmlWZTjFdnuKJlgwWWGJSmOo-YFywrKxGkyC2GJ4qESsYJNkrsPaI3TJjWt0b3vXKPT0PtB94M3aWfTHlwP7bBONfiyqUwKrkpd0_uoz5ITC20ws0OdJu-PD2_z52zx-vQyv19kmnLeZxZLrAmAsSUhtiJWUI2BQVUgzMGUDOmK4YLkXADPK5lXmFuDgGopkOQlnSbX-75f4Cy4Wi27wbs4Uf3Uq29lahK_jXh8Inq1Rze-2w4m9GrdBG3aFpzphqAoFkIgxiJ48Q_8a0okFjnLJSKRwntK-y4Eb6za-GYNfqcwUmP2ap-9GuWYvdpFz-XB89m5etvEfUvQK9u0ZrQgIQqWI_oLFxiB3g</recordid><startdate>20071201</startdate><enddate>20071201</enddate><creator>Fan, ChangZeng</creator><creator>Sun, LiLing</creator><creator>Wei, ZunJie</creator><creator>Ma, Mingzhen</creator><creator>Liu, RiPing</creator><creator>Zeng, SongYan</creator><creator>Wang, WenKui</creator><general>Springer Nature B.V</general><general>Department of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China</general><general>National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China%National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China%Department of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China%National Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AEUYN</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BHPHI</scope><scope>BKSAR</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PCBAR</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>H8D</scope><scope>KR7</scope><scope>L7M</scope><scope>2B.</scope><scope>4A8</scope><scope>92I</scope><scope>93N</scope><scope>PSX</scope><scope>TCJ</scope></search><sort><creationdate>20071201</creationdate><title>Valence electronic structure of tantalum carbide and nitride</title><author>Fan, ChangZeng ; Sun, LiLing ; Wei, ZunJie ; Ma, Mingzhen ; Liu, RiPing ; Zeng, SongYan ; Wang, WenKui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c366t-f191c2aaefb22fd2f83c1a4ad7016aeb40cd4172568a65d95d16fe0a3c98096b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>All</topic><topic>also</topic><topic>analysis</topic><topic>and</topic><topic>are</topic><topic>been</topic><topic>bond</topic><topic>bonds</topic><topic>calculated</topic><topic>carbide</topic><topic>characters</topic><topic>Chemical bonds</topic><topic>coincides</topic><topic>components</topic><topic>compounds</topic><topic>Covalence</topic><topic>covalent</topic><topic>Covalent bonds</topic><topic>deduced</topic><topic>EET</topic><topic>electronic</topic><topic>Electronic structure</topic><topic>empirical</topic><topic>Empirical analysis</topic><topic>First principles</topic><topic>For</topic><topic>former</topic><topic>found</topic><topic>from</topic><topic>has</topic><topic>have</topic><topic>implanting</topic><topic>ionic</topic><topic>ionicities</topic><topic>ionicity</topic><topic>larger</topic><topic>latter</topic><topic>metallic</topic><topic>method.</topic><topic>nitride</topic><topic>number</topic><topic>PVL</topic><topic>quantitative</topic><topic>relative</topic><topic>results</topic><topic>reveal</topic><topic>smaller</topic><topic>strength</topic><topic>stronger</topic><topic>strongest</topic><topic>structure</topic><topic>structures</topic><topic>studied</topic><topic>suggest</topic><topic>TaC</topic><topic>TaN</topic><topic>Tantalum</topic><topic>Tantalum carbide</topic><topic>Tantalum nitrides</topic><topic>than</topic><topic>that</topic><topic>The</topic><topic>their</topic><topic>theory</topic><topic>these</topic><topic>using</topic><topic>valence</topic><topic>which</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fan, ChangZeng</creatorcontrib><creatorcontrib>Sun, LiLing</creatorcontrib><creatorcontrib>Wei, ZunJie</creatorcontrib><creatorcontrib>Ma, Mingzhen</creatorcontrib><creatorcontrib>Liu, RiPing</creatorcontrib><creatorcontrib>Zeng, SongYan</creatorcontrib><creatorcontrib>Wang, WenKui</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest One Sustainability</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>Natural Science Collection</collection><collection>Earth, Atmospheric & Aquatic Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Earth, Atmospheric & Aquatic Science Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Wanfang Data Journals - Hong Kong</collection><collection>WANFANG Data Centre</collection><collection>Wanfang Data Journals</collection><collection>万方数据期刊 - 香港版</collection><collection>China Online Journals (COJ)</collection><collection>China Online Journals (COJ)</collection><jtitle>Science China. Physics, mechanics & astronomy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fan, ChangZeng</au><au>Sun, LiLing</au><au>Wei, ZunJie</au><au>Ma, Mingzhen</au><au>Liu, RiPing</au><au>Zeng, SongYan</au><au>Wang, WenKui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Valence electronic structure of tantalum carbide and nitride</atitle><jtitle>Science China. Physics, mechanics & astronomy</jtitle><date>2007-12-01</date><risdate>2007</risdate><volume>50</volume><issue>6</issue><spage>737</spage><epage>741</epage><pages>737-741</pages><issn>1674-7348</issn><issn>1672-1799</issn><eissn>1869-1927</eissn><eissn>1862-2844</eissn><abstract>The valence electronic structures of tantalum carbide (TaC) and tantalum nitride (TaN) are studied by using the empirical electronic theory (EET). The results reveal that the bonds of these compounds have covalent, metallic and ionic characters. For a quantitative analysis of the relative strength of these components, their ionicities have been calculated by implanting the results of EET to the PVL model. It has been found that the ionicity of tantalum carbide is smaller than that of tantalum nitride. The EET results also reveal that the covalent electronic number of the strongest bond in the former is larger than that of the latter. All these suggest that the covalent bond of TaC is stronger than that of TaN, which coincides to that deduced from the first-principles method.……</abstract><cop>Beijing</cop><pub>Springer Nature B.V</pub><doi>10.1007/s11433-007-0078-y</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1674-7348 |
| ispartof | Science China. Physics, mechanics & astronomy, 2007-12, Vol.50 (6), p.737-741 |
| issn | 1674-7348 1672-1799 1869-1927 1862-2844 |
| language | eng |
| recordid | cdi_proquest_journals_2918545902 |
| source | Springer Nature - Complete Springer Journals; Alma/SFX Local Collection |
| subjects | All also analysis and are been bond bonds calculated carbide characters Chemical bonds coincides components compounds Covalence covalent Covalent bonds deduced EET electronic Electronic structure empirical Empirical analysis First principles For former found from has have implanting ionic ionicities ionicity larger latter metallic method. nitride number PVL quantitative relative results reveal smaller strength stronger strongest structure structures studied suggest TaC TaN Tantalum Tantalum carbide Tantalum nitrides than that The their theory these using valence which |
| title | Valence electronic structure of tantalum carbide and nitride |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T22%3A03%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-wanfang_jour_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Valence%20electronic%20structure%20of%20tantalum%20carbide%20and%20nitride&rft.jtitle=Science%20China.%20Physics,%20mechanics%20&%20astronomy&rft.au=Fan,%20ChangZeng&rft.date=2007-12-01&rft.volume=50&rft.issue=6&rft.spage=737&rft.epage=741&rft.pages=737-741&rft.issn=1674-7348&rft.eissn=1869-1927&rft_id=info:doi/10.1007/s11433-007-0078-y&rft_dat=%3Cwanfang_jour_proqu%3Ezgkx_eg200706007%3C/wanfang_jour_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2918545902&rft_id=info:pmid/&rft_cqvip_id=1000887450&rft_wanfj_id=zgkx_eg200706007&rfr_iscdi=true |