Numerical study of a novel GaN vertical FinFET with a p-base structure for high switching performance
In this work, a novel GaN-based vertical power FinFET with an embedded p-base structure is proposed and investigated by TCAD simulations. Owing to the p-base region and heavily doped n-GaN channels, the electrical performance is significantly improved. Among performance measures, the threshold volta...
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| Veröffentlicht in: | Journal of computational electronics 2022-06, Vol.21 (3), p.625-632 |
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| container_title | Journal of computational electronics |
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| creator | Zhang, Chi Hou, Bo Li, Sheng Lu, Weihao Huang, Jingwen Ma, Yanfeng Liu, Siyang Sun, Weifeng |
| description | In this work, a novel GaN-based vertical power FinFET with an embedded p-base structure is proposed and investigated by TCAD simulations. Owing to the p-base region and heavily doped n-GaN channels, the electrical performance is significantly improved. Among performance measures, the threshold voltage exceeds 1.7 V, which increases the compatibility in the system applications. Also, the specific
on
-resistance and the breakdown voltage reach 0.277 mΩ cm
2
and 881 V, respectively, indicating a high figure of merit of 2.81 GW/cm
2
. Meanwhile, the p-base region is also employed to flatten the electric field beneath the bottom of each trench, ensuring blocking capability even without a source field plate in the proposed device. The source field plate-free structure of the proposed device exhibits smaller capacitance characteristics, resulting in shorter switching time and smaller switching energy loss. In summary, the proposed device combines the advantages of high threshold voltage, high breakdown voltage, low specific
on
-resistance and better switching performance. |
| doi_str_mv | 10.1007/s10825-022-01868-y |
| format | Article |
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on
-resistance and the breakdown voltage reach 0.277 mΩ cm
2
and 881 V, respectively, indicating a high figure of merit of 2.81 GW/cm
2
. Meanwhile, the p-base region is also employed to flatten the electric field beneath the bottom of each trench, ensuring blocking capability even without a source field plate in the proposed device. The source field plate-free structure of the proposed device exhibits smaller capacitance characteristics, resulting in shorter switching time and smaller switching energy loss. In summary, the proposed device combines the advantages of high threshold voltage, high breakdown voltage, low specific
on
-resistance and better switching performance.</description><identifier>ISSN: 1569-8025</identifier><identifier>EISSN: 1572-8137</identifier><identifier>DOI: 10.1007/s10825-022-01868-y</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Breakdown ; Design ; Electric fields ; Electrical Engineering ; Engineering ; Figure of merit ; Mathematical and Computational Engineering ; Mathematical and Computational Physics ; Mechanical Engineering ; Optical and Electronic Materials ; Semiconductors ; Simulation ; Switching ; Theoretical ; Threshold voltage ; Transistors</subject><ispartof>Journal of computational electronics, 2022-06, Vol.21 (3), p.625-632</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022</rights><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2022.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-743159ac26730955546d1501b356c04a1cf19289d54398b860abace2aaf363883</citedby><cites>FETCH-LOGICAL-c319t-743159ac26730955546d1501b356c04a1cf19289d54398b860abace2aaf363883</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10825-022-01868-y$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2918276388?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,780,784,21388,27924,27925,33744,41488,42557,43805,51319,64385,64389,72469</link.rule.ids></links><search><creatorcontrib>Zhang, Chi</creatorcontrib><creatorcontrib>Hou, Bo</creatorcontrib><creatorcontrib>Li, Sheng</creatorcontrib><creatorcontrib>Lu, Weihao</creatorcontrib><creatorcontrib>Huang, Jingwen</creatorcontrib><creatorcontrib>Ma, Yanfeng</creatorcontrib><creatorcontrib>Liu, Siyang</creatorcontrib><creatorcontrib>Sun, Weifeng</creatorcontrib><title>Numerical study of a novel GaN vertical FinFET with a p-base structure for high switching performance</title><title>Journal of computational electronics</title><addtitle>J Comput Electron</addtitle><description>In this work, a novel GaN-based vertical power FinFET with an embedded p-base structure is proposed and investigated by TCAD simulations. Owing to the p-base region and heavily doped n-GaN channels, the electrical performance is significantly improved. Among performance measures, the threshold voltage exceeds 1.7 V, which increases the compatibility in the system applications. Also, the specific
on
-resistance and the breakdown voltage reach 0.277 mΩ cm
2
and 881 V, respectively, indicating a high figure of merit of 2.81 GW/cm
2
. Meanwhile, the p-base region is also employed to flatten the electric field beneath the bottom of each trench, ensuring blocking capability even without a source field plate in the proposed device. The source field plate-free structure of the proposed device exhibits smaller capacitance characteristics, resulting in shorter switching time and smaller switching energy loss. In summary, the proposed device combines the advantages of high threshold voltage, high breakdown voltage, low specific
on
-resistance and better switching performance.</description><subject>Breakdown</subject><subject>Design</subject><subject>Electric fields</subject><subject>Electrical Engineering</subject><subject>Engineering</subject><subject>Figure of merit</subject><subject>Mathematical and Computational Engineering</subject><subject>Mathematical and Computational Physics</subject><subject>Mechanical Engineering</subject><subject>Optical and Electronic Materials</subject><subject>Semiconductors</subject><subject>Simulation</subject><subject>Switching</subject><subject>Theoretical</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>1569-8025</issn><issn>1572-8137</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNp9kE1OwzAQRi0EEqVwAVaWWBvGdpzYS1TRglSVDawtx3V-qjYJdgLqbTgLJ8NtKrFjNdb4fd9ID6FbCvcUIHsIFCQTBBgjQGUqyf4MTajIGJGUZ-eHd6qIBCYu0VUIGwAGLKETVK6GnfO1NVsc-mG9x22Bzc930366LV6YFf50vj9-z-tm_vSGv-q-OhAdyU1wMeQH2w_e4aL1uKrLCoeI2KpuStw5H7c701h3jS4Ksw3u5jSn6D22zZ7J8nXxMntcEsup6kmWcCqUsSzNOCghRJKuqQCac5FaSAy1BVVMqrVIuJK5TMHkxjpmTMFTLiWforuxt_Ptx-BCrzft4Jt4UjNFJctOFBsp69sQvCt05-ud8XtNQR-E6lGojkL1UajexxAfQyHCTen8X_U_qV9VGnoz</recordid><startdate>20220601</startdate><enddate>20220601</enddate><creator>Zhang, Chi</creator><creator>Hou, Bo</creator><creator>Li, Sheng</creator><creator>Lu, Weihao</creator><creator>Huang, Jingwen</creator><creator>Ma, Yanfeng</creator><creator>Liu, Siyang</creator><creator>Sun, Weifeng</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JQ2</scope><scope>K7-</scope><scope>L6V</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope></search><sort><creationdate>20220601</creationdate><title>Numerical study of a novel GaN vertical FinFET with a p-base structure for high switching performance</title><author>Zhang, Chi ; Hou, Bo ; Li, Sheng ; Lu, Weihao ; Huang, Jingwen ; Ma, Yanfeng ; Liu, Siyang ; Sun, Weifeng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-743159ac26730955546d1501b356c04a1cf19289d54398b860abace2aaf363883</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Breakdown</topic><topic>Design</topic><topic>Electric fields</topic><topic>Electrical Engineering</topic><topic>Engineering</topic><topic>Figure of merit</topic><topic>Mathematical and Computational Engineering</topic><topic>Mathematical and Computational Physics</topic><topic>Mechanical Engineering</topic><topic>Optical and Electronic Materials</topic><topic>Semiconductors</topic><topic>Simulation</topic><topic>Switching</topic><topic>Theoretical</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Chi</creatorcontrib><creatorcontrib>Hou, Bo</creatorcontrib><creatorcontrib>Li, Sheng</creatorcontrib><creatorcontrib>Lu, Weihao</creatorcontrib><creatorcontrib>Huang, Jingwen</creatorcontrib><creatorcontrib>Ma, Yanfeng</creatorcontrib><creatorcontrib>Liu, Siyang</creatorcontrib><creatorcontrib>Sun, Weifeng</creatorcontrib><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Computer Science Collection</collection><collection>Computer Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><jtitle>Journal of computational electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Chi</au><au>Hou, Bo</au><au>Li, Sheng</au><au>Lu, Weihao</au><au>Huang, Jingwen</au><au>Ma, Yanfeng</au><au>Liu, Siyang</au><au>Sun, Weifeng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Numerical study of a novel GaN vertical FinFET with a p-base structure for high switching performance</atitle><jtitle>Journal of computational electronics</jtitle><stitle>J Comput Electron</stitle><date>2022-06-01</date><risdate>2022</risdate><volume>21</volume><issue>3</issue><spage>625</spage><epage>632</epage><pages>625-632</pages><issn>1569-8025</issn><eissn>1572-8137</eissn><abstract>In this work, a novel GaN-based vertical power FinFET with an embedded p-base structure is proposed and investigated by TCAD simulations. Owing to the p-base region and heavily doped n-GaN channels, the electrical performance is significantly improved. Among performance measures, the threshold voltage exceeds 1.7 V, which increases the compatibility in the system applications. Also, the specific
on
-resistance and the breakdown voltage reach 0.277 mΩ cm
2
and 881 V, respectively, indicating a high figure of merit of 2.81 GW/cm
2
. Meanwhile, the p-base region is also employed to flatten the electric field beneath the bottom of each trench, ensuring blocking capability even without a source field plate in the proposed device. The source field plate-free structure of the proposed device exhibits smaller capacitance characteristics, resulting in shorter switching time and smaller switching energy loss. In summary, the proposed device combines the advantages of high threshold voltage, high breakdown voltage, low specific
on
-resistance and better switching performance.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10825-022-01868-y</doi><tpages>8</tpages></addata></record> |
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| subjects | Breakdown Design Electric fields Electrical Engineering Engineering Figure of merit Mathematical and Computational Engineering Mathematical and Computational Physics Mechanical Engineering Optical and Electronic Materials Semiconductors Simulation Switching Theoretical Threshold voltage Transistors |
| title | Numerical study of a novel GaN vertical FinFET with a p-base structure for high switching performance |
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