An analytical model for a TFET with an n-doped channel operating in accumulation and inversion modes
The tunnel field-effect transistor (TFET) is an ambipolar device that conducts current with the channel in both accumulation and inversion modes. Analytical expressions for the channel potential and current in a TFET with an n -doped channel when operating in the accumulation and inversion modes are...
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| Veröffentlicht in: | Journal of computational electronics 2021-06, Vol.20 (3), p.1125-1136 |
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| creator | Ranjith, R. Suja, K. J. Komaragiri, Rama S. |
| description | The tunnel field-effect transistor (TFET) is an ambipolar device that conducts current with the channel in both accumulation and inversion modes. Analytical expressions for the channel potential and current in a TFET with an
n
-doped channel when operating in the accumulation and inversion modes are proposed herein. The potential model is derived by solving the two-dimensional (2D) Poisson equation using the superposition principle while considering the charges present in the channel due to electron or hole accumulation along with the depletion charges. An expression for the tunneling current corresponding to the maximum tunneling probability is also derived. The tunneling current is obtained by analytically calculating the minimum tunneling length in a TFET when operating in the accumulation or inversion mode. The results of the proposed potential model is compared with technology computer-aided design (TCAD) simulations for TFET with various dimensions, revealing good agreement. The potential and current in an
n
-type TFET (
n
TFET) obtained using the proposed models are also analyzed. |
| doi_str_mv | 10.1007/s10825-021-01683-x |
| format | Article |
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n
-doped channel when operating in the accumulation and inversion modes are proposed herein. The potential model is derived by solving the two-dimensional (2D) Poisson equation using the superposition principle while considering the charges present in the channel due to electron or hole accumulation along with the depletion charges. An expression for the tunneling current corresponding to the maximum tunneling probability is also derived. The tunneling current is obtained by analytically calculating the minimum tunneling length in a TFET when operating in the accumulation or inversion mode. The results of the proposed potential model is compared with technology computer-aided design (TCAD) simulations for TFET with various dimensions, revealing good agreement. The potential and current in an
n
-type TFET (
n
TFET) obtained using the proposed models are also analyzed.</description><identifier>ISSN: 1569-8025</identifier><identifier>EISSN: 1572-8137</identifier><identifier>DOI: 10.1007/s10825-021-01683-x</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Accumulation ; CAD ; Computer aided design ; Electric fields ; Electrical Engineering ; Electrons ; Engineering ; Field effect transistors ; Mathematical analysis ; Mathematical and Computational Engineering ; Mathematical and Computational Physics ; Mathematical models ; Mechanical Engineering ; Optical and Electronic Materials ; Poisson equation ; Semiconductor devices ; Superposition (mathematics) ; Theoretical</subject><ispartof>Journal of computational electronics, 2021-06, Vol.20 (3), p.1125-1136</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021</rights><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2021.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-66bb195f0f7eb3cc3be1ce43571355fb37751afa9778b55891f4975a02986cb43</citedby><cites>FETCH-LOGICAL-c319t-66bb195f0f7eb3cc3be1ce43571355fb37751afa9778b55891f4975a02986cb43</cites><orcidid>0000-0001-9991-9145</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10825-021-01683-x$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2918274934?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,780,784,21388,27924,27925,33744,41488,42557,43805,51319,64385,64389,72469</link.rule.ids></links><search><creatorcontrib>Ranjith, R.</creatorcontrib><creatorcontrib>Suja, K. J.</creatorcontrib><creatorcontrib>Komaragiri, Rama S.</creatorcontrib><title>An analytical model for a TFET with an n-doped channel operating in accumulation and inversion modes</title><title>Journal of computational electronics</title><addtitle>J Comput Electron</addtitle><description>The tunnel field-effect transistor (TFET) is an ambipolar device that conducts current with the channel in both accumulation and inversion modes. Analytical expressions for the channel potential and current in a TFET with an
n
-doped channel when operating in the accumulation and inversion modes are proposed herein. The potential model is derived by solving the two-dimensional (2D) Poisson equation using the superposition principle while considering the charges present in the channel due to electron or hole accumulation along with the depletion charges. An expression for the tunneling current corresponding to the maximum tunneling probability is also derived. The tunneling current is obtained by analytically calculating the minimum tunneling length in a TFET when operating in the accumulation or inversion mode. The results of the proposed potential model is compared with technology computer-aided design (TCAD) simulations for TFET with various dimensions, revealing good agreement. The potential and current in an
n
-type TFET (
n
TFET) obtained using the proposed models are also analyzed.</description><subject>Accumulation</subject><subject>CAD</subject><subject>Computer aided design</subject><subject>Electric fields</subject><subject>Electrical Engineering</subject><subject>Electrons</subject><subject>Engineering</subject><subject>Field effect transistors</subject><subject>Mathematical analysis</subject><subject>Mathematical and Computational Engineering</subject><subject>Mathematical and Computational Physics</subject><subject>Mathematical models</subject><subject>Mechanical Engineering</subject><subject>Optical and Electronic Materials</subject><subject>Poisson equation</subject><subject>Semiconductor devices</subject><subject>Superposition (mathematics)</subject><subject>Theoretical</subject><issn>1569-8025</issn><issn>1572-8137</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNp9kE9PwyAchonRxDn9Ap5IPKP8oJRyXBb_JUu8zDOhFLYuXTuh1e3bS62JN0_wkud9El6EboHeA6XyIQItmCCUAaGQF5wcz9AMhGSkAC7Px3uuSEGZuERXMe4oZZRlMEPVosWmNc2pr61p8L6rXIN9F7DB66fHNf6q-20CcEuq7uAqbLembROSQjB93W5wnQTWDvuhSbkbbVV6-3QhjmkUxmt04U0T3c3vOUfvyb18Iau359flYkUsB9WTPC9LUMJTL13JreWlA-syLiRwIXzJpRRgvFFSFqUQhQKfKSkMZarIbZnxObqbvIfQfQwu9nrXDSH9LmqmoGAyU3yk2ETZ0MUYnNeHUO9NOGmgelxTT2vqtKb-WVMfU4lPpZjgduPCn_qf1jf9_nfz</recordid><startdate>20210601</startdate><enddate>20210601</enddate><creator>Ranjith, R.</creator><creator>Suja, K. 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J.</au><au>Komaragiri, Rama S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An analytical model for a TFET with an n-doped channel operating in accumulation and inversion modes</atitle><jtitle>Journal of computational electronics</jtitle><stitle>J Comput Electron</stitle><date>2021-06-01</date><risdate>2021</risdate><volume>20</volume><issue>3</issue><spage>1125</spage><epage>1136</epage><pages>1125-1136</pages><issn>1569-8025</issn><eissn>1572-8137</eissn><abstract>The tunnel field-effect transistor (TFET) is an ambipolar device that conducts current with the channel in both accumulation and inversion modes. Analytical expressions for the channel potential and current in a TFET with an
n
-doped channel when operating in the accumulation and inversion modes are proposed herein. The potential model is derived by solving the two-dimensional (2D) Poisson equation using the superposition principle while considering the charges present in the channel due to electron or hole accumulation along with the depletion charges. An expression for the tunneling current corresponding to the maximum tunneling probability is also derived. The tunneling current is obtained by analytically calculating the minimum tunneling length in a TFET when operating in the accumulation or inversion mode. The results of the proposed potential model is compared with technology computer-aided design (TCAD) simulations for TFET with various dimensions, revealing good agreement. The potential and current in an
n
-type TFET (
n
TFET) obtained using the proposed models are also analyzed.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10825-021-01683-x</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0001-9991-9145</orcidid></addata></record> |
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| subjects | Accumulation CAD Computer aided design Electric fields Electrical Engineering Electrons Engineering Field effect transistors Mathematical analysis Mathematical and Computational Engineering Mathematical and Computational Physics Mathematical models Mechanical Engineering Optical and Electronic Materials Poisson equation Semiconductor devices Superposition (mathematics) Theoretical |
| title | An analytical model for a TFET with an n-doped channel operating in accumulation and inversion modes |
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