An improved model for the I-V characteristics of submicron SiC MESFETs by evaluating the potential distribution inside the channel

This paper presents a detailed mathematical model describing the I - V characteristics of submicron SiC MESFETs. Poisson’s equation with appropriate boundary conditions has been solved to determine the potential distribution inside the channel. The location ( L 1 ) of the Schottky barrier gate with...

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Veröffentlicht in:	Journal of computational electronics 2017-09, Vol.16 (3), p.514-525
Hauptverfasser:	Ahmed, M. M., Riaz, M., Ahmed, U. F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Boundary conditions Current voltage characteristics Depletion Electric fields Electrical Engineering Engineering Field effect transistors Mathematical and Computational Engineering Mathematical and Computational Physics Mathematical models Mechanical Engineering Optical and Electronic Materials Poisson equation Theoretical Velocity
Online-Zugang:	Volltext
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