First-principles simulation of oxygen vacancy migration in HfOx, CeOx, and at their interfaces for applications in resistive random-access memories

Transition metal-oxide resistive random-access memories seem to be a viable candidate as the next-generation storage technology because transition metals have multiple oxidation states and are good ionic conductors. A wide range of transition metal oxides have recently been studied; however, fundame...

Ausführliche Beschreibung