Does Circulation in Individual Current States Survive in the Total Current Density?
We describe the two-dimensional simulation of a bent resonant tunneling diode structure which displays vortices in its total current density pattern over a range of applied bias. In contrast, a double gate n-MOSFET is shown where such circulation exists in individual subband states but does not surv...
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| Veröffentlicht in: | Journal of computational electronics 2003-12, Vol.2 (2-4), p.105-108 |
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| container_end_page | 108 |
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| container_issue | 2-4 |
| container_start_page | 105 |
| container_title | Journal of computational electronics |
| container_volume | 2 |
| creator | Laux, S.E. Kumar, A. Fischetti, M.V. |
| description | We describe the two-dimensional simulation of a bent resonant tunneling diode structure which displays vortices in its total current density pattern over a range of applied bias. In contrast, a double gate n-MOSFET is shown where such circulation exists in individual subband states but does not survive in the total current density solution. Both devices are simulated assuming ballistic quantum transport in Si at 300 K. |
| doi_str_mv | 10.1023/B:JCEL.0000011407.24435.d9 |
| format | Article |
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| identifier | ISSN: 1569-8025 |
| ispartof | Journal of computational electronics, 2003-12, Vol.2 (2-4), p.105-108 |
| issn | 1569-8025 1572-8137 |
| language | eng |
| recordid | cdi_proquest_journals_2918257435 |
| source | Springer Nature - Complete Springer Journals; ProQuest Central |
| subjects | Current density Quantum transport Resonant tunneling Tunnel diodes |
| title | Does Circulation in Individual Current States Survive in the Total Current Density? |
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