A Physically-Based Analytic Model for Stress-Induced Hole Mobility Enhancement

A new, computationally efficient model for silicon hole mobility under stress is presented. The model predicts the modulation of hole mobility by stress under arbitrary stress conditions, channel orientations, and fields. The model uses a simplified k-space description of the silicon valence band, w...

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Veröffentlicht in:Journal of computational electronics 2004-10, Vol.3 (3-4), p.161-164
Hauptverfasser: Obradovic, Borna, Matagne, Philippe, Shifren, Lucian, Wang, Everett, Stettler, Mark, He, Jun, Giles, Martin D.
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Sprache:eng
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