GaN Optical Devices Integrated With Sol-Gel Films for pH Detection
Accurate pH measurement is essential in numerous applications; however, developing a compact pH-sensing unit with features of quick response, a wide measurement range, and high reliability remains a significant challenge. In this work, the miniaturized design and fabrication of a fully integrated de...
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| Veröffentlicht in: | IEEE transactions on electron devices 2024-02, Vol.71 (2), p.1-5 |
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| container_title | IEEE transactions on electron devices |
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| creator | Lu, Gaofei Chen, Jian Chai, Yang Li, Kwai Hei |
| description | Accurate pH measurement is essential in numerous applications; however, developing a compact pH-sensing unit with features of quick response, a wide measurement range, and high reliability remains a significant challenge. In this work, the miniaturized design and fabrication of a fully integrated device for pH detection are demonstrated. The capabilities of the GaN device in light emission and light detection are investigated, and the effectiveness of the sol-gel film in responding to pH changes is determined through optical reflectance spectroscopy. By using an optimized film thickness of 16 \mu m, the compact integrated device exhibits a highly linear response across a wide pH range of 5-13. Dynamic measurements confirm that the device can provide consistent, stable, and fast photocurrent responses within 3-5 s when testing various 1- \mu L acid-base samples. The developed chip-scale device has appealing characteristics such as millimeter-scale size, short measurement time, low sample volume demands, and ease of use, which render it a viable candidate for pH detection applications. |
| doi_str_mv | 10.1109/TED.2023.3344549 |
| format | Article |
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In this work, the miniaturized design and fabrication of a fully integrated device for pH detection are demonstrated. The capabilities of the GaN device in light emission and light detection are investigated, and the effectiveness of the sol-gel film in responding to pH changes is determined through optical reflectance spectroscopy. By using an optimized film thickness of 16 <inline-formula> <tex-math notation="LaTeX">\mu </tex-math> </inline-formula>m, the compact integrated device exhibits a highly linear response across a wide pH range of 5-13. Dynamic measurements confirm that the device can provide consistent, stable, and fast photocurrent responses within 3-5 s when testing various 1-<inline-formula> <tex-math notation="LaTeX">\mu </tex-math> </inline-formula>L acid-base samples. The developed chip-scale device has appealing characteristics such as millimeter-scale size, short measurement time, low sample volume demands, and ease of use, which render it a viable candidate for pH detection applications.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2023.3344549</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Emission analysis ; Film thickness ; Gallium nitrides ; GaN ; integrated device ; Light emission ; Light emitting diodes ; optical device ; Optical device fabrication ; Optical films ; Optical reflection ; pH detection ; Photoconductivity ; Photoelectric effect ; Semiconductor device measurement ; Sol-gel processes</subject><ispartof>IEEE transactions on electron devices, 2024-02, Vol.71 (2), p.1-5</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c245t-d03331e3a0ee42dc25e89b73fce2afc42477f25e3cc4a8f0abd6356001ab98363</cites><orcidid>0000-0002-0520-1632 ; 0000-0002-8943-0861</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10374315$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10374315$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lu, Gaofei</creatorcontrib><creatorcontrib>Chen, Jian</creatorcontrib><creatorcontrib>Chai, Yang</creatorcontrib><creatorcontrib>Li, Kwai Hei</creatorcontrib><title>GaN Optical Devices Integrated With Sol-Gel Films for pH Detection</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[Accurate pH measurement is essential in numerous applications; however, developing a compact pH-sensing unit with features of quick response, a wide measurement range, and high reliability remains a significant challenge. In this work, the miniaturized design and fabrication of a fully integrated device for pH detection are demonstrated. The capabilities of the GaN device in light emission and light detection are investigated, and the effectiveness of the sol-gel film in responding to pH changes is determined through optical reflectance spectroscopy. By using an optimized film thickness of 16 <inline-formula> <tex-math notation="LaTeX">\mu </tex-math> </inline-formula>m, the compact integrated device exhibits a highly linear response across a wide pH range of 5-13. Dynamic measurements confirm that the device can provide consistent, stable, and fast photocurrent responses within 3-5 s when testing various 1-<inline-formula> <tex-math notation="LaTeX">\mu </tex-math> </inline-formula>L acid-base samples. The developed chip-scale device has appealing characteristics such as millimeter-scale size, short measurement time, low sample volume demands, and ease of use, which render it a viable candidate for pH detection applications.]]></description><subject>Emission analysis</subject><subject>Film thickness</subject><subject>Gallium nitrides</subject><subject>GaN</subject><subject>integrated device</subject><subject>Light emission</subject><subject>Light emitting diodes</subject><subject>optical device</subject><subject>Optical device fabrication</subject><subject>Optical films</subject><subject>Optical reflection</subject><subject>pH detection</subject><subject>Photoconductivity</subject><subject>Photoelectric effect</subject><subject>Semiconductor device measurement</subject><subject>Sol-gel processes</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkD1PwzAQhi0EEqWwMzBYYk6xfc6HR-i3VNGBIkbLdS6QKk2C7SLx73HVDkynOz3v3ekh5J6zEedMPW2mk5FgAkYAUqZSXZABT9M8UZnMLsmAMV4kCgq4Jjfe72KbSSkG5GVuXum6D7U1DZ3gT23R02Ub8NOZgCX9qMMXfeuaZI4NndXN3tOqc7RfRDigDXXX3pKryjQe7851SN5n0814kazW8-X4eZVYIdOQlAwAOIJhiFKUVqRYqG0OlUVhKiuFzPMqDsFaaYqKmW2ZQZrFT81WFZDBkDye9vau-z6gD3rXHVwbT2qheMFEJhSLFDtR1nXeO6x07-q9cb-aM300paMpfTSlz6Zi5OEUqRHxHw65BJ7CH8YnYqY</recordid><startdate>20240201</startdate><enddate>20240201</enddate><creator>Lu, Gaofei</creator><creator>Chen, Jian</creator><creator>Chai, Yang</creator><creator>Li, Kwai Hei</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0520-1632</orcidid><orcidid>https://orcid.org/0000-0002-8943-0861</orcidid></search><sort><creationdate>20240201</creationdate><title>GaN Optical Devices Integrated With Sol-Gel Films for pH Detection</title><author>Lu, Gaofei ; Chen, Jian ; Chai, Yang ; Li, Kwai Hei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c245t-d03331e3a0ee42dc25e89b73fce2afc42477f25e3cc4a8f0abd6356001ab98363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Emission analysis</topic><topic>Film thickness</topic><topic>Gallium nitrides</topic><topic>GaN</topic><topic>integrated device</topic><topic>Light emission</topic><topic>Light emitting diodes</topic><topic>optical device</topic><topic>Optical device fabrication</topic><topic>Optical films</topic><topic>Optical reflection</topic><topic>pH detection</topic><topic>Photoconductivity</topic><topic>Photoelectric effect</topic><topic>Semiconductor device measurement</topic><topic>Sol-gel processes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, Gaofei</creatorcontrib><creatorcontrib>Chen, Jian</creatorcontrib><creatorcontrib>Chai, Yang</creatorcontrib><creatorcontrib>Li, Kwai Hei</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lu, Gaofei</au><au>Chen, Jian</au><au>Chai, Yang</au><au>Li, Kwai Hei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaN Optical Devices Integrated With Sol-Gel Films for pH Detection</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2024-02-01</date><risdate>2024</risdate><volume>71</volume><issue>2</issue><spage>1</spage><epage>5</epage><pages>1-5</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[Accurate pH measurement is essential in numerous applications; however, developing a compact pH-sensing unit with features of quick response, a wide measurement range, and high reliability remains a significant challenge. In this work, the miniaturized design and fabrication of a fully integrated device for pH detection are demonstrated. The capabilities of the GaN device in light emission and light detection are investigated, and the effectiveness of the sol-gel film in responding to pH changes is determined through optical reflectance spectroscopy. By using an optimized film thickness of 16 <inline-formula> <tex-math notation="LaTeX">\mu </tex-math> </inline-formula>m, the compact integrated device exhibits a highly linear response across a wide pH range of 5-13. Dynamic measurements confirm that the device can provide consistent, stable, and fast photocurrent responses within 3-5 s when testing various 1-<inline-formula> <tex-math notation="LaTeX">\mu </tex-math> </inline-formula>L acid-base samples. The developed chip-scale device has appealing characteristics such as millimeter-scale size, short measurement time, low sample volume demands, and ease of use, which render it a viable candidate for pH detection applications.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2023.3344549</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-0520-1632</orcidid><orcidid>https://orcid.org/0000-0002-8943-0861</orcidid></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Emission analysis Film thickness Gallium nitrides GaN integrated device Light emission Light emitting diodes optical device Optical device fabrication Optical films Optical reflection pH detection Photoconductivity Photoelectric effect Semiconductor device measurement Sol-gel processes |
| title | GaN Optical Devices Integrated With Sol-Gel Films for pH Detection |
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