Electronic structure and transport property of bilayer MoSe2 with AA and AB stacking
In this work, we have analyzed the electronic structure and transmission spectrum of the AA and AB stackedbilayer (2L) MoSe2. The band gap of 2LMoSe2is indirect in nature, with band gap value of AA stacking1.15× times higher than AB stacking. The density functional theory (DFT) calculations in combi...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 1 |
| container_start_page | |
| container_title | |
| container_volume | 2995 |
| creator | Chowdhury, Sayantika Somvanshi, Divya |
| description | In this work, we have analyzed the electronic structure and transmission spectrum of the AA and AB stackedbilayer (2L) MoSe2. The band gap of 2LMoSe2is indirect in nature, with band gap value of AA stacking1.15× times higher than AB stacking. The density functional theory (DFT) calculations in combinations with the non-equilibrium Green’s function (NEGF) approach is used to calculate the transmission spectra of 2L-(AA/AB) MoSe2. Further, we comparedthe transmission spectrumof 2L-(AA/AB) MoSe2 along the zigzag (ZZ) and Armchair (AC) orientation using orthorhombic structure of 2L-MoSe2. The results of this analysis will guide researchers in the area of 2L-MoSe2for futuretwo-dimensional (2D) electronic deviceapplications. |
| doi_str_mv | 10.1063/5.0178182 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_proquest_journals_2913522592</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2913522592</sourcerecordid><originalsourceid>FETCH-LOGICAL-p632-61e1158c9036ade1eedca2364e9a16734739593944b42e7284729d558114221d3</originalsourceid><addsrcrecordid>eNotkMtOwzAURC0EEqWw4A8ssUMK-F6_4mWoykMqYkEX7CLXcSGlxMF2hPr3BNrVbI5mRoeQS2A3wBS_lTcMdAklHpEJSAmFVqCOyYQxIwoU_O2UnKW0YQyN1uWELOdb73IMXetoynFweYie2q6hOdou9SFm2sfQ-5h3NKzpqt3anY_0Obx6pD9t_qBV9c9Xd2OBdZ9t935OTtZ2m_zFIadkeT9fzh6LxcvD06xaFL3iWCjwALJ0hnFlGw_eN84iV8IbC0pzobmRhhshVgK9xlJoNI2UJYBAhIZPydW-djz4PfiU600YYjcu1miAS0RpcKSu91Rybba5DV3dx_bLxl0NrP6TVsv6II3_ArQSXCc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>2913522592</pqid></control><display><type>conference_proceeding</type><title>Electronic structure and transport property of bilayer MoSe2 with AA and AB stacking</title><source>AIP Journals Complete</source><creator>Chowdhury, Sayantika ; Somvanshi, Divya</creator><contributor>Udupa, D. V. ; Tyagi, Mohit ; Mishra, Ajay Kumar ; Rout, Sanjeeb Kumar</contributor><creatorcontrib>Chowdhury, Sayantika ; Somvanshi, Divya ; Udupa, D. V. ; Tyagi, Mohit ; Mishra, Ajay Kumar ; Rout, Sanjeeb Kumar</creatorcontrib><description>In this work, we have analyzed the electronic structure and transmission spectrum of the AA and AB stackedbilayer (2L) MoSe2. The band gap of 2LMoSe2is indirect in nature, with band gap value of AA stacking1.15× times higher than AB stacking. The density functional theory (DFT) calculations in combinations with the non-equilibrium Green’s function (NEGF) approach is used to calculate the transmission spectra of 2L-(AA/AB) MoSe2. Further, we comparedthe transmission spectrumof 2L-(AA/AB) MoSe2 along the zigzag (ZZ) and Armchair (AC) orientation using orthorhombic structure of 2L-MoSe2. The results of this analysis will guide researchers in the area of 2L-MoSe2for futuretwo-dimensional (2D) electronic deviceapplications.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/5.0178182</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Density functional theory ; Electronic structure ; Energy gap ; Green's functions ; Mathematical analysis ; Molybdenum compounds ; Transport properties</subject><ispartof>AIP conference proceedings, 2024, Vol.2995 (1)</ispartof><rights>Author(s)</rights><rights>2024 Author(s). Published by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/acp/article-lookup/doi/10.1063/5.0178182$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,794,4510,23928,23929,25138,27922,27923,76154</link.rule.ids></links><search><contributor>Udupa, D. V.</contributor><contributor>Tyagi, Mohit</contributor><contributor>Mishra, Ajay Kumar</contributor><contributor>Rout, Sanjeeb Kumar</contributor><creatorcontrib>Chowdhury, Sayantika</creatorcontrib><creatorcontrib>Somvanshi, Divya</creatorcontrib><title>Electronic structure and transport property of bilayer MoSe2 with AA and AB stacking</title><title>AIP conference proceedings</title><description>In this work, we have analyzed the electronic structure and transmission spectrum of the AA and AB stackedbilayer (2L) MoSe2. The band gap of 2LMoSe2is indirect in nature, with band gap value of AA stacking1.15× times higher than AB stacking. The density functional theory (DFT) calculations in combinations with the non-equilibrium Green’s function (NEGF) approach is used to calculate the transmission spectra of 2L-(AA/AB) MoSe2. Further, we comparedthe transmission spectrumof 2L-(AA/AB) MoSe2 along the zigzag (ZZ) and Armchair (AC) orientation using orthorhombic structure of 2L-MoSe2. The results of this analysis will guide researchers in the area of 2L-MoSe2for futuretwo-dimensional (2D) electronic deviceapplications.</description><subject>Density functional theory</subject><subject>Electronic structure</subject><subject>Energy gap</subject><subject>Green's functions</subject><subject>Mathematical analysis</subject><subject>Molybdenum compounds</subject><subject>Transport properties</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2024</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotkMtOwzAURC0EEqWw4A8ssUMK-F6_4mWoykMqYkEX7CLXcSGlxMF2hPr3BNrVbI5mRoeQS2A3wBS_lTcMdAklHpEJSAmFVqCOyYQxIwoU_O2UnKW0YQyN1uWELOdb73IMXetoynFweYie2q6hOdou9SFm2sfQ-5h3NKzpqt3anY_0Obx6pD9t_qBV9c9Xd2OBdZ9t935OTtZ2m_zFIadkeT9fzh6LxcvD06xaFL3iWCjwALJ0hnFlGw_eN84iV8IbC0pzobmRhhshVgK9xlJoNI2UJYBAhIZPydW-djz4PfiU600YYjcu1miAS0RpcKSu91Rybba5DV3dx_bLxl0NrP6TVsv6II3_ArQSXCc</recordid><startdate>20240112</startdate><enddate>20240112</enddate><creator>Chowdhury, Sayantika</creator><creator>Somvanshi, Divya</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20240112</creationdate><title>Electronic structure and transport property of bilayer MoSe2 with AA and AB stacking</title><author>Chowdhury, Sayantika ; Somvanshi, Divya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p632-61e1158c9036ade1eedca2364e9a16734739593944b42e7284729d558114221d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Density functional theory</topic><topic>Electronic structure</topic><topic>Energy gap</topic><topic>Green's functions</topic><topic>Mathematical analysis</topic><topic>Molybdenum compounds</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chowdhury, Sayantika</creatorcontrib><creatorcontrib>Somvanshi, Divya</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chowdhury, Sayantika</au><au>Somvanshi, Divya</au><au>Udupa, D. V.</au><au>Tyagi, Mohit</au><au>Mishra, Ajay Kumar</au><au>Rout, Sanjeeb Kumar</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Electronic structure and transport property of bilayer MoSe2 with AA and AB stacking</atitle><btitle>AIP conference proceedings</btitle><date>2024-01-12</date><risdate>2024</risdate><volume>2995</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>In this work, we have analyzed the electronic structure and transmission spectrum of the AA and AB stackedbilayer (2L) MoSe2. The band gap of 2LMoSe2is indirect in nature, with band gap value of AA stacking1.15× times higher than AB stacking. The density functional theory (DFT) calculations in combinations with the non-equilibrium Green’s function (NEGF) approach is used to calculate the transmission spectra of 2L-(AA/AB) MoSe2. Further, we comparedthe transmission spectrumof 2L-(AA/AB) MoSe2 along the zigzag (ZZ) and Armchair (AC) orientation using orthorhombic structure of 2L-MoSe2. The results of this analysis will guide researchers in the area of 2L-MoSe2for futuretwo-dimensional (2D) electronic deviceapplications.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0178182</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2024, Vol.2995 (1) |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_proquest_journals_2913522592 |
| source | AIP Journals Complete |
| subjects | Density functional theory Electronic structure Energy gap Green's functions Mathematical analysis Molybdenum compounds Transport properties |
| title | Electronic structure and transport property of bilayer MoSe2 with AA and AB stacking |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T17%3A26%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Electronic%20structure%20and%20transport%20property%20of%20bilayer%20MoSe2%20with%20AA%20and%20AB%20stacking&rft.btitle=AIP%20conference%20proceedings&rft.au=Chowdhury,%20Sayantika&rft.date=2024-01-12&rft.volume=2995&rft.issue=1&rft.issn=0094-243X&rft.eissn=1551-7616&rft.coden=APCPCS&rft_id=info:doi/10.1063/5.0178182&rft_dat=%3Cproquest_scita%3E2913522592%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2913522592&rft_id=info:pmid/&rfr_iscdi=true |