Low temperature growth of NiO epitaxial films on c-sapphire substrate by pulsed laser deposition technique
NiO films are grown on c-sapphire substrates using pulsed laser deposition technique at different growth temperatures. Both in-plane and out of plane X-ray diffraction studies reveal high epitaxial quality of the film on sapphire. The surface morphology of the films is studied by atomic force micros...
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| creator | Sahu, Bhabani Prasad Yadav, Santosh Kumar Dhar, Subhabrata |
| description | NiO films are grown on c-sapphire substrates using pulsed laser deposition technique at different growth temperatures. Both in-plane and out of plane X-ray diffraction studies reveal high epitaxial quality of the film on sapphire. The surface morphology of the films is studied by atomic force microscopy, which shows smooth and continuous morphology with root mean square (RMS) roughness less than 2 nm. Resistivity of the film is observed to depend strongly on the growth temperature. This has been attributed to the growth temperature dependent variation of Ni vacancy concentration in the film. |
| doi_str_mv | 10.1063/5.0178400 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_proquest_journals_2913522523</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2913522523</sourcerecordid><originalsourceid>FETCH-LOGICAL-p1680-37ee33e16a51fc9ca261fcdd67e9637fafc64835ebd3377c116b78d24d3bc6b73</originalsourceid><addsrcrecordid>eNotkE9LAzEQxYMoWKsHv0HAm7A1fzbJ7lGKVqHYi4K3kM3O2pRtNyZZar-9Ke3pzeE38-Y9hO4pmVEi-ZOYEaqqkpALNKFC0EJJKi_RhJC6LFjJv6_RTYwbQlitVDVBm-Wwxwm2HoJJYwD8E4Z9WuOhwx9uhcG7ZP6c6XHn-m3Eww7bIhrv1y6zcWxiynuAmwP2Yx-hxb2JEHALfoguucwnsOud-x3hFl11JjN3Z52ir9eXz_lbsVwt3ufPy8JTWZGCKwDOgUojaGdra5jM2rZSQS256kxnZVlxAU3LuVKWUtmoqmVlyxubRz5FD6e7PgzZNia9Gcawy5aa1ZQLxgTjmXo8UdHmiMdPtQ9ua8JBU6KPXWqhz13yf6ktZ8Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>2913522523</pqid></control><display><type>conference_proceeding</type><title>Low temperature growth of NiO epitaxial films on c-sapphire substrate by pulsed laser deposition technique</title><source>AIP Journals Complete</source><creator>Sahu, Bhabani Prasad ; Yadav, Santosh Kumar ; Dhar, Subhabrata</creator><contributor>Udupa, D. V. ; Tyagi, Mohit ; Mishra, Ajay Kumar ; Rout, Sanjeeb Kumar</contributor><creatorcontrib>Sahu, Bhabani Prasad ; Yadav, Santosh Kumar ; Dhar, Subhabrata ; Udupa, D. V. ; Tyagi, Mohit ; Mishra, Ajay Kumar ; Rout, Sanjeeb Kumar</creatorcontrib><description>NiO films are grown on c-sapphire substrates using pulsed laser deposition technique at different growth temperatures. Both in-plane and out of plane X-ray diffraction studies reveal high epitaxial quality of the film on sapphire. The surface morphology of the films is studied by atomic force microscopy, which shows smooth and continuous morphology with root mean square (RMS) roughness less than 2 nm. Resistivity of the film is observed to depend strongly on the growth temperature. This has been attributed to the growth temperature dependent variation of Ni vacancy concentration in the film.</description><identifier>ISSN: 0094-243X</identifier><identifier>EISSN: 1551-7616</identifier><identifier>DOI: 10.1063/5.0178400</identifier><identifier>CODEN: APCPCS</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Epitaxial growth ; Low temperature ; Morphology ; Nickel oxides ; Pulsed laser deposition ; Pulsed lasers ; Sapphire ; Substrates ; Temperature dependence</subject><ispartof>AIP conference proceedings, 2024, Vol.2995 (1)</ispartof><rights>AIP Publishing LLC</rights><rights>2024 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/acp/article-lookup/doi/10.1063/5.0178400$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,794,4510,23929,23930,25139,27923,27924,76155</link.rule.ids></links><search><contributor>Udupa, D. V.</contributor><contributor>Tyagi, Mohit</contributor><contributor>Mishra, Ajay Kumar</contributor><contributor>Rout, Sanjeeb Kumar</contributor><creatorcontrib>Sahu, Bhabani Prasad</creatorcontrib><creatorcontrib>Yadav, Santosh Kumar</creatorcontrib><creatorcontrib>Dhar, Subhabrata</creatorcontrib><title>Low temperature growth of NiO epitaxial films on c-sapphire substrate by pulsed laser deposition technique</title><title>AIP conference proceedings</title><description>NiO films are grown on c-sapphire substrates using pulsed laser deposition technique at different growth temperatures. Both in-plane and out of plane X-ray diffraction studies reveal high epitaxial quality of the film on sapphire. The surface morphology of the films is studied by atomic force microscopy, which shows smooth and continuous morphology with root mean square (RMS) roughness less than 2 nm. Resistivity of the film is observed to depend strongly on the growth temperature. This has been attributed to the growth temperature dependent variation of Ni vacancy concentration in the film.</description><subject>Epitaxial growth</subject><subject>Low temperature</subject><subject>Morphology</subject><subject>Nickel oxides</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Sapphire</subject><subject>Substrates</subject><subject>Temperature dependence</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2024</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotkE9LAzEQxYMoWKsHv0HAm7A1fzbJ7lGKVqHYi4K3kM3O2pRtNyZZar-9Ke3pzeE38-Y9hO4pmVEi-ZOYEaqqkpALNKFC0EJJKi_RhJC6LFjJv6_RTYwbQlitVDVBm-Wwxwm2HoJJYwD8E4Z9WuOhwx9uhcG7ZP6c6XHn-m3Eww7bIhrv1y6zcWxiynuAmwP2Yx-hxb2JEHALfoguucwnsOud-x3hFl11JjN3Z52ir9eXz_lbsVwt3ufPy8JTWZGCKwDOgUojaGdra5jM2rZSQS256kxnZVlxAU3LuVKWUtmoqmVlyxubRz5FD6e7PgzZNia9Gcawy5aa1ZQLxgTjmXo8UdHmiMdPtQ9ua8JBU6KPXWqhz13yf6ktZ8Q</recordid><startdate>20240112</startdate><enddate>20240112</enddate><creator>Sahu, Bhabani Prasad</creator><creator>Yadav, Santosh Kumar</creator><creator>Dhar, Subhabrata</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20240112</creationdate><title>Low temperature growth of NiO epitaxial films on c-sapphire substrate by pulsed laser deposition technique</title><author>Sahu, Bhabani Prasad ; Yadav, Santosh Kumar ; Dhar, Subhabrata</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p1680-37ee33e16a51fc9ca261fcdd67e9637fafc64835ebd3377c116b78d24d3bc6b73</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Epitaxial growth</topic><topic>Low temperature</topic><topic>Morphology</topic><topic>Nickel oxides</topic><topic>Pulsed laser deposition</topic><topic>Pulsed lasers</topic><topic>Sapphire</topic><topic>Substrates</topic><topic>Temperature dependence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sahu, Bhabani Prasad</creatorcontrib><creatorcontrib>Yadav, Santosh Kumar</creatorcontrib><creatorcontrib>Dhar, Subhabrata</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sahu, Bhabani Prasad</au><au>Yadav, Santosh Kumar</au><au>Dhar, Subhabrata</au><au>Udupa, D. V.</au><au>Tyagi, Mohit</au><au>Mishra, Ajay Kumar</au><au>Rout, Sanjeeb Kumar</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Low temperature growth of NiO epitaxial films on c-sapphire substrate by pulsed laser deposition technique</atitle><btitle>AIP conference proceedings</btitle><date>2024-01-12</date><risdate>2024</risdate><volume>2995</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>NiO films are grown on c-sapphire substrates using pulsed laser deposition technique at different growth temperatures. Both in-plane and out of plane X-ray diffraction studies reveal high epitaxial quality of the film on sapphire. The surface morphology of the films is studied by atomic force microscopy, which shows smooth and continuous morphology with root mean square (RMS) roughness less than 2 nm. Resistivity of the film is observed to depend strongly on the growth temperature. This has been attributed to the growth temperature dependent variation of Ni vacancy concentration in the film.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0178400</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
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| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_proquest_journals_2913522523 |
| source | AIP Journals Complete |
| subjects | Epitaxial growth Low temperature Morphology Nickel oxides Pulsed laser deposition Pulsed lasers Sapphire Substrates Temperature dependence |
| title | Low temperature growth of NiO epitaxial films on c-sapphire substrate by pulsed laser deposition technique |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T18%3A10%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Low%20temperature%20growth%20of%20NiO%20epitaxial%20films%20on%20c-sapphire%20substrate%20by%20pulsed%20laser%20deposition%20technique&rft.btitle=AIP%20conference%20proceedings&rft.au=Sahu,%20Bhabani%20Prasad&rft.date=2024-01-12&rft.volume=2995&rft.issue=1&rft.issn=0094-243X&rft.eissn=1551-7616&rft.coden=APCPCS&rft_id=info:doi/10.1063/5.0178400&rft_dat=%3Cproquest_scita%3E2913522523%3C/proquest_scita%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2913522523&rft_id=info:pmid/&rfr_iscdi=true |