Bridge Transistors: A Study of Bridging Effects and Early Saturation Behaviors
This brief proposes the use of a bridge transistor as a means of achieving early saturation characteristics of drain current. To investigate the electrical properties of the bridge transistor, we introduce materials capable of forming homojunction [2,7-Dioctyl[1]benzothieno[3,2-b][1] benzothiophene...
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| Veröffentlicht in: | IEEE transactions on electron devices 2024-01, Vol.71 (1), p.759-761 |
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| container_title | IEEE transactions on electron devices |
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| creator | Kim, Seongjae Lee, Subin Kim, Chang-Hyun Yoo, Hocheon |
| description | This brief proposes the use of a bridge transistor as a means of achieving early saturation characteristics of drain current. To investigate the electrical properties of the bridge transistor, we introduce materials capable of forming homojunction [2,7-Dioctyl[1]benzothieno[3,2-b][1] benzothiophene (C8-BTBT)], heterojunction [dinaphtho[2,3-b:2',3'-f]thieno[3,2 -b]thiophene (DNTT)], and Schottky junction (Au) as bridge layers, along with the C8-BTBT-based channel. Our findings reveal early saturation characteristics of drain current in bridge transistors with Schottky junction. Through contact resistance extraction and 2-D numerical simulation, we suggest that the early current saturation behavior is due to the additional contact resistance and depletion region. |
| doi_str_mv | 10.1109/TED.2023.3330454 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_2911475732</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10316235</ieee_id><sourcerecordid>2911475732</sourcerecordid><originalsourceid>FETCH-LOGICAL-c245t-7bba311bc38c19ee69b427df737ad8e2c24d171afa926bfdd8e624656ce1f1fc3</originalsourceid><addsrcrecordid>eNpNkD1PwzAQhi0EEqWwMzBYYk7x2Y6dsLUQPqQKhpbZchK7uCpJsR2k_ntc2oHpdHfPeyc9CF0DmQCQ8m5ZPU4ooWzCGCM85ydoBHkus1JwcYpGhECRlaxg5-gihHVqBed0hN5m3rUrg5ded8GF2Ptwj6d4EYd2h3uL_9auW-HKWtPEgHXX4kr7zQ4vdBy8jq7v8Mx86h-XspfozOpNMFfHOkYfT9Xy4SWbvz-_PkznWUN5HjNZ15oB1A0rGiiNEWXNqWytZFK3haGJakGCtrqkorZtmgnKRS4aAxZsw8bo9nB36_vvwYSo1v3gu_RS0RKAy1wymihyoBrfh-CNVVvvvrTfKSBqb00la2pvTR2tpcjNIeKMMf9wBoKynP0Ch_lodQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2911475732</pqid></control><display><type>article</type><title>Bridge Transistors: A Study of Bridging Effects and Early Saturation Behaviors</title><source>IEEE Electronic Library (IEL)</source><creator>Kim, Seongjae ; Lee, Subin ; Kim, Chang-Hyun ; Yoo, Hocheon</creator><creatorcontrib>Kim, Seongjae ; Lee, Subin ; Kim, Chang-Hyun ; Yoo, Hocheon</creatorcontrib><description>This brief proposes the use of a bridge transistor as a means of achieving early saturation characteristics of drain current. To investigate the electrical properties of the bridge transistor, we introduce materials capable of forming homojunction [2,7-Dioctyl[1]benzothieno[3,2-b][1] benzothiophene (C8-BTBT)], heterojunction [dinaphtho[2,3-b:2',3'-f]thieno[3,2 -b]thiophene (DNTT)], and Schottky junction (Au) as bridge layers, along with the C8-BTBT-based channel. Our findings reveal early saturation characteristics of drain current in bridge transistors with Schottky junction. Through contact resistance extraction and 2-D numerical simulation, we suggest that the early current saturation behavior is due to the additional contact resistance and depletion region.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2023.3330454</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Benzothiophene ; Bridge circuits ; Bridge transistors ; Bridges ; Contact resistance ; Electric contacts ; Electrical properties ; Gold ; Heterojunctions ; Homojunctions ; organic semiconductors ; saturation voltage (VSat) ; Thin film transistors ; thin-film transistors (TFTs) ; Transistors ; Voltage measurement</subject><ispartof>IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.759-761</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c245t-7bba311bc38c19ee69b427df737ad8e2c24d171afa926bfdd8e624656ce1f1fc3</cites><orcidid>0000-0002-0973-6490 ; 0000-0003-0772-3327 ; 0000-0001-9856-7758 ; 0000-0002-7112-6335</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10316235$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10316235$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kim, Seongjae</creatorcontrib><creatorcontrib>Lee, Subin</creatorcontrib><creatorcontrib>Kim, Chang-Hyun</creatorcontrib><creatorcontrib>Yoo, Hocheon</creatorcontrib><title>Bridge Transistors: A Study of Bridging Effects and Early Saturation Behaviors</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>This brief proposes the use of a bridge transistor as a means of achieving early saturation characteristics of drain current. To investigate the electrical properties of the bridge transistor, we introduce materials capable of forming homojunction [2,7-Dioctyl[1]benzothieno[3,2-b][1] benzothiophene (C8-BTBT)], heterojunction [dinaphtho[2,3-b:2',3'-f]thieno[3,2 -b]thiophene (DNTT)], and Schottky junction (Au) as bridge layers, along with the C8-BTBT-based channel. Our findings reveal early saturation characteristics of drain current in bridge transistors with Schottky junction. Through contact resistance extraction and 2-D numerical simulation, we suggest that the early current saturation behavior is due to the additional contact resistance and depletion region.</description><subject>Benzothiophene</subject><subject>Bridge circuits</subject><subject>Bridge transistors</subject><subject>Bridges</subject><subject>Contact resistance</subject><subject>Electric contacts</subject><subject>Electrical properties</subject><subject>Gold</subject><subject>Heterojunctions</subject><subject>Homojunctions</subject><subject>organic semiconductors</subject><subject>saturation voltage (VSat)</subject><subject>Thin film transistors</subject><subject>thin-film transistors (TFTs)</subject><subject>Transistors</subject><subject>Voltage measurement</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkD1PwzAQhi0EEqWwMzBYYk7x2Y6dsLUQPqQKhpbZchK7uCpJsR2k_ntc2oHpdHfPeyc9CF0DmQCQ8m5ZPU4ooWzCGCM85ydoBHkus1JwcYpGhECRlaxg5-gihHVqBed0hN5m3rUrg5ded8GF2Ptwj6d4EYd2h3uL_9auW-HKWtPEgHXX4kr7zQ4vdBy8jq7v8Mx86h-XspfozOpNMFfHOkYfT9Xy4SWbvz-_PkznWUN5HjNZ15oB1A0rGiiNEWXNqWytZFK3haGJakGCtrqkorZtmgnKRS4aAxZsw8bo9nB36_vvwYSo1v3gu_RS0RKAy1wymihyoBrfh-CNVVvvvrTfKSBqb00la2pvTR2tpcjNIeKMMf9wBoKynP0Ch_lodQ</recordid><startdate>202401</startdate><enddate>202401</enddate><creator>Kim, Seongjae</creator><creator>Lee, Subin</creator><creator>Kim, Chang-Hyun</creator><creator>Yoo, Hocheon</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0973-6490</orcidid><orcidid>https://orcid.org/0000-0003-0772-3327</orcidid><orcidid>https://orcid.org/0000-0001-9856-7758</orcidid><orcidid>https://orcid.org/0000-0002-7112-6335</orcidid></search><sort><creationdate>202401</creationdate><title>Bridge Transistors: A Study of Bridging Effects and Early Saturation Behaviors</title><author>Kim, Seongjae ; Lee, Subin ; Kim, Chang-Hyun ; Yoo, Hocheon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c245t-7bba311bc38c19ee69b427df737ad8e2c24d171afa926bfdd8e624656ce1f1fc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Benzothiophene</topic><topic>Bridge circuits</topic><topic>Bridge transistors</topic><topic>Bridges</topic><topic>Contact resistance</topic><topic>Electric contacts</topic><topic>Electrical properties</topic><topic>Gold</topic><topic>Heterojunctions</topic><topic>Homojunctions</topic><topic>organic semiconductors</topic><topic>saturation voltage (VSat)</topic><topic>Thin film transistors</topic><topic>thin-film transistors (TFTs)</topic><topic>Transistors</topic><topic>Voltage measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Seongjae</creatorcontrib><creatorcontrib>Lee, Subin</creatorcontrib><creatorcontrib>Kim, Chang-Hyun</creatorcontrib><creatorcontrib>Yoo, Hocheon</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Seongjae</au><au>Lee, Subin</au><au>Kim, Chang-Hyun</au><au>Yoo, Hocheon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bridge Transistors: A Study of Bridging Effects and Early Saturation Behaviors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2024-01</date><risdate>2024</risdate><volume>71</volume><issue>1</issue><spage>759</spage><epage>761</epage><pages>759-761</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>This brief proposes the use of a bridge transistor as a means of achieving early saturation characteristics of drain current. To investigate the electrical properties of the bridge transistor, we introduce materials capable of forming homojunction [2,7-Dioctyl[1]benzothieno[3,2-b][1] benzothiophene (C8-BTBT)], heterojunction [dinaphtho[2,3-b:2',3'-f]thieno[3,2 -b]thiophene (DNTT)], and Schottky junction (Au) as bridge layers, along with the C8-BTBT-based channel. Our findings reveal early saturation characteristics of drain current in bridge transistors with Schottky junction. Through contact resistance extraction and 2-D numerical simulation, we suggest that the early current saturation behavior is due to the additional contact resistance and depletion region.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2023.3330454</doi><tpages>3</tpages><orcidid>https://orcid.org/0000-0002-0973-6490</orcidid><orcidid>https://orcid.org/0000-0003-0772-3327</orcidid><orcidid>https://orcid.org/0000-0001-9856-7758</orcidid><orcidid>https://orcid.org/0000-0002-7112-6335</orcidid></addata></record> |
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| subjects | Benzothiophene Bridge circuits Bridge transistors Bridges Contact resistance Electric contacts Electrical properties Gold Heterojunctions Homojunctions organic semiconductors saturation voltage (VSat) Thin film transistors thin-film transistors (TFTs) Transistors Voltage measurement |
| title | Bridge Transistors: A Study of Bridging Effects and Early Saturation Behaviors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T22%3A06%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Bridge%20Transistors:%20A%20Study%20of%20Bridging%20Effects%20and%20Early%20Saturation%20Behaviors&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Kim,%20Seongjae&rft.date=2024-01&rft.volume=71&rft.issue=1&rft.spage=759&rft.epage=761&rft.pages=759-761&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2023.3330454&rft_dat=%3Cproquest_RIE%3E2911475732%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2911475732&rft_id=info:pmid/&rft_ieee_id=10316235&rfr_iscdi=true |