A broadband self-powered photodetector based on NiPS3
Self-powered photodetectors have been attracting more and more attention due to the energy shortage issues around the world. As a type of layered van der Waals material, NiPS3 has garnered much attention in the realms of optoelectronics. In order to excavate the possible self-powered potential of th...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2024-01, Vol.12 (2), p.593-599 |
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| container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
| container_volume | 12 |
| creator | Zong, Linghao Song, Jiaming Wang, Shuxian Chen, Wenhui Yang, Juanjuan Li, Bingda Hu, Peng Fan, Haibo Teng, Feng Zhao, Xin |
| description | Self-powered photodetectors have been attracting more and more attention due to the energy shortage issues around the world. As a type of layered van der Waals material, NiPS3 has garnered much attention in the realms of optoelectronics. In order to excavate the possible self-powered potential of this material, we utilized the asymmetric electrode contact design in the device structure of a NiPS3-based photodetector. Photoelectric characterization of the device presented a broadband spectral detection range from 254 nm to 1020 nm. The device showed a zero-bias photoelectric response with responsivity and detectivity of 2.3 mA W−1 and 6.2 × 109 Jones, respectively. Moreover, this photodetector exhibited a response time of less than 40 ms for both rising and decay times and low dark current (∼pA). The self-powered phenomenon is possibly attributed to the unbalanced Schottky barriers of the two electrode contacts. This study provides a potential route for van der Waals material-based photoelectric devices applied in wearable photoelectronic devices and green energy economy. |
| doi_str_mv | 10.1039/d3tc03804a |
| format | Article |
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As a type of layered van der Waals material, NiPS3 has garnered much attention in the realms of optoelectronics. In order to excavate the possible self-powered potential of this material, we utilized the asymmetric electrode contact design in the device structure of a NiPS3-based photodetector. Photoelectric characterization of the device presented a broadband spectral detection range from 254 nm to 1020 nm. The device showed a zero-bias photoelectric response with responsivity and detectivity of 2.3 mA W−1 and 6.2 × 109 Jones, respectively. Moreover, this photodetector exhibited a response time of less than 40 ms for both rising and decay times and low dark current (∼pA). The self-powered phenomenon is possibly attributed to the unbalanced Schottky barriers of the two electrode contacts. This study provides a potential route for van der Waals material-based photoelectric devices applied in wearable photoelectronic devices and green energy economy.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/d3tc03804a</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Broadband ; Clean energy ; Dark current ; Electrodes ; Optoelectronics ; Photoelectricity ; Photometers</subject><ispartof>Journal of materials chemistry. 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This study provides a potential route for van der Waals material-based photoelectric devices applied in wearable photoelectronic devices and green energy economy.</description><subject>Broadband</subject><subject>Clean energy</subject><subject>Dark current</subject><subject>Electrodes</subject><subject>Optoelectronics</subject><subject>Photoelectricity</subject><subject>Photometers</subject><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNo9jUtLAzEUhYMoWGo3_oIB19Gbx81jWYovKCqo65KbZNBSJuMkxb_vgOLZnPOdxTmMXQq4FqD8TVItgnKgwwlbSEDgFpU-_c_SnLNVrXuY5YRxxi8YrjuaSkgUhtTVfOj5WL7zlFM3fpRWUm45tjJ1FOrclaF7-nx5VRfsrA-Hmld_vmTvd7dvmwe-fb5_3Ky3fBRONa7JZO11JIjokw9GOSdzQvREaIV2KAMEMjMSOW372EewtrcIpAWiWrKr391xKl_HXNtuX47TMF_upAdvpDDaqR_aoUaU</recordid><startdate>20240104</startdate><enddate>20240104</enddate><creator>Zong, Linghao</creator><creator>Song, Jiaming</creator><creator>Wang, Shuxian</creator><creator>Chen, Wenhui</creator><creator>Yang, Juanjuan</creator><creator>Li, Bingda</creator><creator>Hu, Peng</creator><creator>Fan, Haibo</creator><creator>Teng, Feng</creator><creator>Zhao, Xin</creator><general>Royal Society of Chemistry</general><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20240104</creationdate><title>A broadband self-powered photodetector based on NiPS3</title><author>Zong, Linghao ; Song, Jiaming ; Wang, Shuxian ; Chen, Wenhui ; Yang, Juanjuan ; Li, Bingda ; Hu, Peng ; Fan, Haibo ; Teng, Feng ; Zhao, Xin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p183t-4b6e494cb0c59d9a63882ed559bb5714852a0ab69bbbb847fcfc077f750b41553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Broadband</topic><topic>Clean energy</topic><topic>Dark current</topic><topic>Electrodes</topic><topic>Optoelectronics</topic><topic>Photoelectricity</topic><topic>Photometers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zong, Linghao</creatorcontrib><creatorcontrib>Song, Jiaming</creatorcontrib><creatorcontrib>Wang, Shuxian</creatorcontrib><creatorcontrib>Chen, Wenhui</creatorcontrib><creatorcontrib>Yang, Juanjuan</creatorcontrib><creatorcontrib>Li, Bingda</creatorcontrib><creatorcontrib>Hu, Peng</creatorcontrib><creatorcontrib>Fan, Haibo</creatorcontrib><creatorcontrib>Teng, Feng</creatorcontrib><creatorcontrib>Zhao, Xin</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zong, Linghao</au><au>Song, Jiaming</au><au>Wang, Shuxian</au><au>Chen, Wenhui</au><au>Yang, Juanjuan</au><au>Li, Bingda</au><au>Hu, Peng</au><au>Fan, Haibo</au><au>Teng, Feng</au><au>Zhao, Xin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A broadband self-powered photodetector based on NiPS3</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2024-01-04</date><risdate>2024</risdate><volume>12</volume><issue>2</issue><spage>593</spage><epage>599</epage><pages>593-599</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>Self-powered photodetectors have been attracting more and more attention due to the energy shortage issues around the world. As a type of layered van der Waals material, NiPS3 has garnered much attention in the realms of optoelectronics. In order to excavate the possible self-powered potential of this material, we utilized the asymmetric electrode contact design in the device structure of a NiPS3-based photodetector. Photoelectric characterization of the device presented a broadband spectral detection range from 254 nm to 1020 nm. The device showed a zero-bias photoelectric response with responsivity and detectivity of 2.3 mA W−1 and 6.2 × 109 Jones, respectively. Moreover, this photodetector exhibited a response time of less than 40 ms for both rising and decay times and low dark current (∼pA). The self-powered phenomenon is possibly attributed to the unbalanced Schottky barriers of the two electrode contacts. 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| ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-01, Vol.12 (2), p.593-599 |
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| source | Royal Society Of Chemistry Journals 2008- |
| subjects | Broadband Clean energy Dark current Electrodes Optoelectronics Photoelectricity Photometers |
| title | A broadband self-powered photodetector based on NiPS3 |
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