Delay of the potential-induced degradation of n-type crystalline silicon photovoltaic modules by the prior application of reverse bias

We investigated the influence of the pre-application of reverse bias on the potential-induced degradation (PID) of n-type front-emitter (n-FE) crystalline Si (c-Si) photovoltaic modules. Applying a prior positive reverse bias to n-FE cells delays charge-accumulation-type PID (PID-1), decreases in sh...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2024-02, Vol.63 (2), p.2
Hauptverfasser:	Wu, Deqin, Tu, Huynh Thi Cam, Ohdaira, Keisuke
Format:	Artikel
Sprache:	eng
Schlagworte:	Accumulation Bias Degradation Emitters n-type front-emitter crystalline silicon solar cell Open circuit voltage P-n junctions Photovoltaic cells photovoltaic module potential-induced degradation Short circuit currents Silicon
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