Optimized electrical properties of p-type field-effect transistors based on WSe2 grown at moderate temperatures

Two-dimensional transition-metal dichalcogenides (TMDCs) have been pursued for high-performance logic electronic devices, and compatibility with silicon complementary metal-oxide-semiconductor (CMOS) technology is essential. Thus, high-quality material synthesis at reduced temperature is a key chall...

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Veröffentlicht in:	Applied physics letters 2023-12, Vol.123 (26)
Hauptverfasser:	Wang, Xin, Xiong, Xiong, Shi, Xinhang, Gu, Chengru, Wu, Yanqing
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Chemical vapor deposition CMOS Electrical properties Field effect transistors Low temperature Semiconductor devices Silicon dioxide Silicon substrates Synthesis Transition metal compounds
Online-Zugang:	Volltext
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