Strategies for dislocation density reduction in CdTe epilayers grown directly on (211) Si substrates using MOVPE

Two different techniques, namely in-situ cycle annealing and post-growth patterning and annealing, were studied to reduce dislocation density in thick CdTe epilayers grown directly on (211) Si substrates using metal organic vapor phase epitaxy (MOVPE) for their applications in X-ray, gamma ray detec...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2024, Vol.35 (1), p.31, Article 31
Hauptverfasser:	Niraula, M., Chaudhari, B. S., Okumura, R., Takagi, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Characterization and Evaluation of Materials Chemistry and Materials Science Dislocation density Gamma ray detectors Gamma rays Materials Science Metalorganic chemical vapor deposition Optical and Electronic Materials Sensors Silicon substrates Single crystals Temperature Vapor phase epitaxy Vapor phases
Online-Zugang:	Volltext
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