Self-powered silicon metal–semiconductor–metal photodetector based on asymmetric Schottky barrier heights
We present a highly efficient self-powered silicon metal–semiconductor–metal (MSM) photodetector (PD). The key feature of our device lies in its asymmetric electrode design, which induces an asymmetry in the Schottky barrier heights at the MSM interface. We utilize a built-in electric field that ori...
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Veröffentlicht in: | Applied physics letters 2023-12, Vol.123 (25) |
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creator | Kim, You Jin Kumar, Mondal Ramit Kumar, Ghimire Mohan Kim, Munho |
description | We present a highly efficient self-powered silicon metal–semiconductor–metal (MSM) photodetector (PD). The key feature of our device lies in its asymmetric electrode design, which induces an asymmetry in the Schottky barrier heights at the MSM interface. We utilize a built-in electric field that originates from the larger electrode and extends toward the smaller electrode due to the presence of trapped holes on the larger electrode side. This approach facilitates efficient charge carrier separation and collection, leading to self-powered operation across a wavelength range of 300–1000 nm at 0 V bias. The PD exhibits a high responsivity of 513 mA/W and detectivity of 2.04
× 1011 Jones at a wavelength of 1000 nm. Furthermore, the normalized photocurrent-to-dark current ratio (NPDR) analysis reveals the PD's superior dark current suppression capabilities, resulting in high sensitivity and reliable detection. |
doi_str_mv | 10.1063/5.0178740 |
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× 1011 Jones at a wavelength of 1000 nm. Furthermore, the normalized photocurrent-to-dark current ratio (NPDR) analysis reveals the PD's superior dark current suppression capabilities, resulting in high sensitivity and reliable detection.</description><subject>Applied physics</subject><subject>Asymmetry</subject><subject>Current carriers</subject><subject>Dark current</subject><subject>Electric fields</subject><subject>Electrodes</subject><subject>Photoelectric effect</subject><subject>Photometers</subject><subject>Silicon</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kEFOwzAQRS0EEqWw4AaRWIGUYmecOF6iigJSJRaFdeQ4E-qS1MF2hbrjDtyQk-DSrlmN_sz7M5pPyCWjE0YLuM0nlIlScHpERowKkQJj5TEZUUohLWTOTsmZ96so8wxgRPoFdm062E902CTedEbbddJjUN3P17fHfqebjQ7WRf3XT4alDbbBgLtuUisfndGk_LaPgDM6WeiIhPdtHDpn0CVLNG_L4M_JSas6jxeHOiavs_uX6WM6f354mt7NU53lWUi1EG0rWdkIzRmXqimA1zUWAIUEVnPFGyEQFXKpM-ASRImaAUMlJY0_wphc7fcOzn5s0IdqZTduHU9WmaRcQFGAiNT1ntLOeu-wrQZneuW2FaPVLs0qrw5pRvZmz3ptggrGrv-BfwEQVXf8</recordid><startdate>20231218</startdate><enddate>20231218</enddate><creator>Kim, You Jin</creator><creator>Kumar, Mondal Ramit</creator><creator>Kumar, Ghimire Mohan</creator><creator>Kim, Munho</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-1675-4184</orcidid><orcidid>https://orcid.org/0000-0003-3998-7087</orcidid><orcidid>https://orcid.org/0000-0002-0379-1886</orcidid></search><sort><creationdate>20231218</creationdate><title>Self-powered silicon metal–semiconductor–metal photodetector based on asymmetric Schottky barrier heights</title><author>Kim, You Jin ; Kumar, Mondal Ramit ; Kumar, Ghimire Mohan ; Kim, Munho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c252t-c77ff918d7c4149ad634bbe6336931b4a4d77eeae49c2349378ec131ea9909513</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Applied physics</topic><topic>Asymmetry</topic><topic>Current carriers</topic><topic>Dark current</topic><topic>Electric fields</topic><topic>Electrodes</topic><topic>Photoelectric effect</topic><topic>Photometers</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, You Jin</creatorcontrib><creatorcontrib>Kumar, Mondal Ramit</creatorcontrib><creatorcontrib>Kumar, Ghimire Mohan</creatorcontrib><creatorcontrib>Kim, Munho</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, You Jin</au><au>Kumar, Mondal Ramit</au><au>Kumar, Ghimire Mohan</au><au>Kim, Munho</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Self-powered silicon metal–semiconductor–metal photodetector based on asymmetric Schottky barrier heights</atitle><jtitle>Applied physics letters</jtitle><date>2023-12-18</date><risdate>2023</risdate><volume>123</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We present a highly efficient self-powered silicon metal–semiconductor–metal (MSM) photodetector (PD). The key feature of our device lies in its asymmetric electrode design, which induces an asymmetry in the Schottky barrier heights at the MSM interface. We utilize a built-in electric field that originates from the larger electrode and extends toward the smaller electrode due to the presence of trapped holes on the larger electrode side. This approach facilitates efficient charge carrier separation and collection, leading to self-powered operation across a wavelength range of 300–1000 nm at 0 V bias. The PD exhibits a high responsivity of 513 mA/W and detectivity of 2.04
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subjects | Applied physics Asymmetry Current carriers Dark current Electric fields Electrodes Photoelectric effect Photometers Silicon |
title | Self-powered silicon metal–semiconductor–metal photodetector based on asymmetric Schottky barrier heights |
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