Mechanistic exploration of charge transport and photosensitivity of metal/polymer/semiconductor (MPS) junction for sensitive light detection applications

Herein, PVA: PVP@Ni(OAc) 2 nanocomposite spin-coated thin films have been fabricated as a barrier modifier interlayer in a metal/polymer/semiconductor configuration for light detection applications. The nanostructure, as well as the surface roughness profile of the deposited thin films, have been in...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials science. Materials in electronics 2023-12, Vol.34 (36), p.2313, Article 2313
Hauptverfasser: El-Mahalawy, Ahmed M., Abdrabou, Mahmoud M., Mansour, S. A., Ali, Fayez M.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 36
container_start_page 2313
container_title Journal of materials science. Materials in electronics
container_volume 34
creator El-Mahalawy, Ahmed M.
Abdrabou, Mahmoud M.
Mansour, S. A.
Ali, Fayez M.
description Herein, PVA: PVP@Ni(OAc) 2 nanocomposite spin-coated thin films have been fabricated as a barrier modifier interlayer in a metal/polymer/semiconductor configuration for light detection applications. The nanostructure, as well as the surface roughness profile of the deposited thin films, have been inspected using a high-resolution transmission electron microscope (HR-TEM) and field emission scan electron microscope (FE-SEM). The obtained results showed nanoplatelet architecture films with smooth surfaces of average roughness of ~ 7.08 nm. The optical absorption, reflection, and transmission spectra have been analyzed and the value of the fabricated film’s energy gap has been confirmed with several analytical approaches. Furthermore, the DC electrical properties of Ag/Si (n-type and p -type), as well as Ag/polymer nanocomposite/Si ( n -type and p -type), have been investigated under dark conditions. The microelectronic properties have been estimated using thermionic emission, Norde’s, and Cheung-Cheung’s models. Besides, the mechanistic details of charge transport have been explored under forward and reverse bias conditions. The photoresponsive features of the designed Ag/ PVA/PVP@Ni(OAc) 2 /p-Si junction have been evaluated under different illumination intensities. The current device achieved superior photodetection capability with high responsivity, detectivity, and fast switching behavior.
doi_str_mv 10.1007/s10854-023-11680-4
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2901673184</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2901673184</sourcerecordid><originalsourceid>FETCH-LOGICAL-c314t-89c088e67528c7ab5a64af9ec2b3fda54c49007778d66bf37b0b6ae40c3fd6283</originalsourceid><addsrcrecordid>eNp9kc1qGzEUhUVpoY7bF-hK0E27mFh_I2mWJTQ_kJBAW-hOaDR3bJmxNJXkED9K37ZjT0J2XV3Q-c65Fx2EPlFyTglRq0yJrkVFGK8olZpU4g1a0FrxSmj2-y1akKZWlagZe4_Oct4SQqTgeoH-3oHb2OBz8Q7D0zjEZIuPAcceT0JaAy7JhjzGVLANHR43scQMIfviH305HMEdFDusxjgcdpBWGXbexdDtXYkJf7l7-PEVb_fBnWL76enFDXjw603BHRSYVTuOg3enA_IH9K63Q4aPz3OJfl1-_3lxXd3eX91cfLutHKeiVLpxRGuQqmbaKdvWVgrbN-BYy_vO1sKJZvohpXQnZdtz1ZJWWhDETbJkmi_R5zl3TPHPHnIx27hPYVppWEOoVJxqMVFsplyKOSfozZj8zqaDocQcKzBzBWaqwJwqMEcTn015gsMa0mv0f1z_AGLLjmI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2901673184</pqid></control><display><type>article</type><title>Mechanistic exploration of charge transport and photosensitivity of metal/polymer/semiconductor (MPS) junction for sensitive light detection applications</title><source>SpringerLink Journals - AutoHoldings</source><creator>El-Mahalawy, Ahmed M. ; Abdrabou, Mahmoud M. ; Mansour, S. A. ; Ali, Fayez M.</creator><creatorcontrib>El-Mahalawy, Ahmed M. ; Abdrabou, Mahmoud M. ; Mansour, S. A. ; Ali, Fayez M.</creatorcontrib><description>Herein, PVA: PVP@Ni(OAc) 2 nanocomposite spin-coated thin films have been fabricated as a barrier modifier interlayer in a metal/polymer/semiconductor configuration for light detection applications. The nanostructure, as well as the surface roughness profile of the deposited thin films, have been inspected using a high-resolution transmission electron microscope (HR-TEM) and field emission scan electron microscope (FE-SEM). The obtained results showed nanoplatelet architecture films with smooth surfaces of average roughness of ~ 7.08 nm. The optical absorption, reflection, and transmission spectra have been analyzed and the value of the fabricated film’s energy gap has been confirmed with several analytical approaches. Furthermore, the DC electrical properties of Ag/Si (n-type and p -type), as well as Ag/polymer nanocomposite/Si ( n -type and p -type), have been investigated under dark conditions. The microelectronic properties have been estimated using thermionic emission, Norde’s, and Cheung-Cheung’s models. Besides, the mechanistic details of charge transport have been explored under forward and reverse bias conditions. The photoresponsive features of the designed Ag/ PVA/PVP@Ni(OAc) 2 /p-Si junction have been evaluated under different illumination intensities. The current device achieved superior photodetection capability with high responsivity, detectivity, and fast switching behavior.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-023-11680-4</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Charge transport ; Chemistry and Materials Science ; Electrical properties ; Electron microscopes ; Energy gap ; Field emission microscopy ; Interlayers ; Materials Science ; Nanocomposites ; Optical and Electronic Materials ; Photosensitivity ; Polymers ; Silicon ; Spin coating ; Surface roughness ; Thermionic emission ; Thin films</subject><ispartof>Journal of materials science. Materials in electronics, 2023-12, Vol.34 (36), p.2313, Article 2313</ispartof><rights>The Author(s) 2023</rights><rights>The Author(s) 2023. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c314t-89c088e67528c7ab5a64af9ec2b3fda54c49007778d66bf37b0b6ae40c3fd6283</cites><orcidid>0000-0002-2613-0116</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-023-11680-4$$EPDF$$P50$$Gspringer$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-023-11680-4$$EHTML$$P50$$Gspringer$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>El-Mahalawy, Ahmed M.</creatorcontrib><creatorcontrib>Abdrabou, Mahmoud M.</creatorcontrib><creatorcontrib>Mansour, S. A.</creatorcontrib><creatorcontrib>Ali, Fayez M.</creatorcontrib><title>Mechanistic exploration of charge transport and photosensitivity of metal/polymer/semiconductor (MPS) junction for sensitive light detection applications</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>Herein, PVA: PVP@Ni(OAc) 2 nanocomposite spin-coated thin films have been fabricated as a barrier modifier interlayer in a metal/polymer/semiconductor configuration for light detection applications. The nanostructure, as well as the surface roughness profile of the deposited thin films, have been inspected using a high-resolution transmission electron microscope (HR-TEM) and field emission scan electron microscope (FE-SEM). The obtained results showed nanoplatelet architecture films with smooth surfaces of average roughness of ~ 7.08 nm. The optical absorption, reflection, and transmission spectra have been analyzed and the value of the fabricated film’s energy gap has been confirmed with several analytical approaches. Furthermore, the DC electrical properties of Ag/Si (n-type and p -type), as well as Ag/polymer nanocomposite/Si ( n -type and p -type), have been investigated under dark conditions. The microelectronic properties have been estimated using thermionic emission, Norde’s, and Cheung-Cheung’s models. Besides, the mechanistic details of charge transport have been explored under forward and reverse bias conditions. The photoresponsive features of the designed Ag/ PVA/PVP@Ni(OAc) 2 /p-Si junction have been evaluated under different illumination intensities. The current device achieved superior photodetection capability with high responsivity, detectivity, and fast switching behavior.</description><subject>Characterization and Evaluation of Materials</subject><subject>Charge transport</subject><subject>Chemistry and Materials Science</subject><subject>Electrical properties</subject><subject>Electron microscopes</subject><subject>Energy gap</subject><subject>Field emission microscopy</subject><subject>Interlayers</subject><subject>Materials Science</subject><subject>Nanocomposites</subject><subject>Optical and Electronic Materials</subject><subject>Photosensitivity</subject><subject>Polymers</subject><subject>Silicon</subject><subject>Spin coating</subject><subject>Surface roughness</subject><subject>Thermionic emission</subject><subject>Thin films</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kc1qGzEUhUVpoY7bF-hK0E27mFh_I2mWJTQ_kJBAW-hOaDR3bJmxNJXkED9K37ZjT0J2XV3Q-c65Fx2EPlFyTglRq0yJrkVFGK8olZpU4g1a0FrxSmj2-y1akKZWlagZe4_Oct4SQqTgeoH-3oHb2OBz8Q7D0zjEZIuPAcceT0JaAy7JhjzGVLANHR43scQMIfviH305HMEdFDusxjgcdpBWGXbexdDtXYkJf7l7-PEVb_fBnWL76enFDXjw603BHRSYVTuOg3enA_IH9K63Q4aPz3OJfl1-_3lxXd3eX91cfLutHKeiVLpxRGuQqmbaKdvWVgrbN-BYy_vO1sKJZvohpXQnZdtz1ZJWWhDETbJkmi_R5zl3TPHPHnIx27hPYVppWEOoVJxqMVFsplyKOSfozZj8zqaDocQcKzBzBWaqwJwqMEcTn015gsMa0mv0f1z_AGLLjmI</recordid><startdate>20231201</startdate><enddate>20231201</enddate><creator>El-Mahalawy, Ahmed M.</creator><creator>Abdrabou, Mahmoud M.</creator><creator>Mansour, S. A.</creator><creator>Ali, Fayez M.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0002-2613-0116</orcidid></search><sort><creationdate>20231201</creationdate><title>Mechanistic exploration of charge transport and photosensitivity of metal/polymer/semiconductor (MPS) junction for sensitive light detection applications</title><author>El-Mahalawy, Ahmed M. ; Abdrabou, Mahmoud M. ; Mansour, S. A. ; Ali, Fayez M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c314t-89c088e67528c7ab5a64af9ec2b3fda54c49007778d66bf37b0b6ae40c3fd6283</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Charge transport</topic><topic>Chemistry and Materials Science</topic><topic>Electrical properties</topic><topic>Electron microscopes</topic><topic>Energy gap</topic><topic>Field emission microscopy</topic><topic>Interlayers</topic><topic>Materials Science</topic><topic>Nanocomposites</topic><topic>Optical and Electronic Materials</topic><topic>Photosensitivity</topic><topic>Polymers</topic><topic>Silicon</topic><topic>Spin coating</topic><topic>Surface roughness</topic><topic>Thermionic emission</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>El-Mahalawy, Ahmed M.</creatorcontrib><creatorcontrib>Abdrabou, Mahmoud M.</creatorcontrib><creatorcontrib>Mansour, S. A.</creatorcontrib><creatorcontrib>Ali, Fayez M.</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies &amp; Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies &amp; Aerospace Database</collection><collection>ProQuest Advanced Technologies &amp; Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>DELNET Engineering &amp; Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>El-Mahalawy, Ahmed M.</au><au>Abdrabou, Mahmoud M.</au><au>Mansour, S. A.</au><au>Ali, Fayez M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mechanistic exploration of charge transport and photosensitivity of metal/polymer/semiconductor (MPS) junction for sensitive light detection applications</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2023-12-01</date><risdate>2023</risdate><volume>34</volume><issue>36</issue><spage>2313</spage><pages>2313-</pages><artnum>2313</artnum><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Herein, PVA: PVP@Ni(OAc) 2 nanocomposite spin-coated thin films have been fabricated as a barrier modifier interlayer in a metal/polymer/semiconductor configuration for light detection applications. The nanostructure, as well as the surface roughness profile of the deposited thin films, have been inspected using a high-resolution transmission electron microscope (HR-TEM) and field emission scan electron microscope (FE-SEM). The obtained results showed nanoplatelet architecture films with smooth surfaces of average roughness of ~ 7.08 nm. The optical absorption, reflection, and transmission spectra have been analyzed and the value of the fabricated film’s energy gap has been confirmed with several analytical approaches. Furthermore, the DC electrical properties of Ag/Si (n-type and p -type), as well as Ag/polymer nanocomposite/Si ( n -type and p -type), have been investigated under dark conditions. The microelectronic properties have been estimated using thermionic emission, Norde’s, and Cheung-Cheung’s models. Besides, the mechanistic details of charge transport have been explored under forward and reverse bias conditions. The photoresponsive features of the designed Ag/ PVA/PVP@Ni(OAc) 2 /p-Si junction have been evaluated under different illumination intensities. The current device achieved superior photodetection capability with high responsivity, detectivity, and fast switching behavior.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-023-11680-4</doi><orcidid>https://orcid.org/0000-0002-2613-0116</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0957-4522
ispartof Journal of materials science. Materials in electronics, 2023-12, Vol.34 (36), p.2313, Article 2313
issn 0957-4522
1573-482X
language eng
recordid cdi_proquest_journals_2901673184
source SpringerLink Journals - AutoHoldings
subjects Characterization and Evaluation of Materials
Charge transport
Chemistry and Materials Science
Electrical properties
Electron microscopes
Energy gap
Field emission microscopy
Interlayers
Materials Science
Nanocomposites
Optical and Electronic Materials
Photosensitivity
Polymers
Silicon
Spin coating
Surface roughness
Thermionic emission
Thin films
title Mechanistic exploration of charge transport and photosensitivity of metal/polymer/semiconductor (MPS) junction for sensitive light detection applications
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T00%3A50%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Mechanistic%20exploration%20of%20charge%20transport%20and%20photosensitivity%20of%20metal/polymer/semiconductor%20(MPS)%20junction%20for%20sensitive%20light%20detection%20applications&rft.jtitle=Journal%20of%20materials%20science.%20Materials%20in%20electronics&rft.au=El-Mahalawy,%20Ahmed%20M.&rft.date=2023-12-01&rft.volume=34&rft.issue=36&rft.spage=2313&rft.pages=2313-&rft.artnum=2313&rft.issn=0957-4522&rft.eissn=1573-482X&rft_id=info:doi/10.1007/s10854-023-11680-4&rft_dat=%3Cproquest_cross%3E2901673184%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2901673184&rft_id=info:pmid/&rfr_iscdi=true