Silicon and gallium nitride electrostatic comb-drive actuators are analyzed for capacitance, displacement, and electric potential distribution

Main objective of this work is to analyse the difference in capacitance value in a structure of electrostatic comb-drive actuators when silicon and gallium nitride are used as a base material. The finite element approach is the foundation for the suggested construction (FEM) which is analysed using COMSOL /Multiphysics software by selecting the electrostatic physics domain. Voltage is applied to comb fingers which are movable and fixed comb fingers are grounded, thus capacitance is established between the comb fingers. Capacitance values are obtained from simulation. When we used Silicon as the material, the capacitance value obtained is 6.5102E-16 F for the Ten comb fingers. And for Gallium Nitride material Capacitance obtained is 5.9012E-16 for Ten comb fingers. And when Comb fingers are varied from one to ten, capacitance will be varied in the range from 1.6832E-16 F to 6.5102E-16 F for Silicon material and varied in the range from 1.3939E-16 F to 5.9012E-16 F for Gallium Nitride material. Displacement of Electric field is calculated with respect to the input potential for both Silicon and Gallium Nitride. Both Silicon and Gallium Nitride Capacitance values are compared and further the Gallium Nitride enhances Capacitance, Power handling capacity and it has higher power density. Keywords: Comb-drive, FEM analysis, Mesh, Silicon, Gallium Nitride