Flux growth and characterization of an FeSi4P4 single crystal

Herein, a single crystal of FeSi4P4 (FSP) with dimensions up to 8 × 7 × 3 mm3 was successfully grown using a seeded flux growth method. Single crystal X-ray diffraction results revealed that the FSP crystal crystallized in the chiral space group P1 (no. 1). High-resolution X-ray diffraction presents a full-width at half-maximum (FWHM) of 36′′ and 46′′ for the (100) and (001) FSP crystals, respectively, which indicates that FSP crystals have high crystalline quality. FSP is thermally stable up to 1157.1 °C and has a high thermal conductivity of 35 W (m K)−1 at room temperature. The magnetic analysis shows that the FSP crystal is paramagnetic in the range from 5 to 300 K. The Hall effect measurement suggests that the FSP crystal is a promising p-type semiconductor at room temperature.