Dual Operation of Gate-All-Around Silicon Nanowires at Cryogenic Temperatures: FET and Quantum Dot

As CMOS structures are envisioned to host silicon spin qubits, and for co-integrating quantum systems with their classical control blocks, the cryogenic behaviour of such structures need to be investigated. In this paper we characterize the electrical properties of Gate-All-Around (GAA) n-MOSFETs Si...

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Veröffentlicht in:	arXiv.org 2023-12
Hauptverfasser:	Rohrbacher, C, Rivard, J, Ritzenthaler, R, Bureau, B, Lupien, C, Mertens, H, Horiguchi, N, Dupont-Ferrier, E
Format:	Artikel
Sprache:	eng
Schlagworte:	Cryogenic temperature Electrical properties Field effect transistors Nanowires Quantum dots Qubits (quantum computing) Room temperature Silicon
Online-Zugang:	Volltext
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