Origin of preferred orientation in an isotropic material: High pressure synthesis of bc8-Si
High pressure experiments and ab initio calculations are used to investigate unexpected crystallographic preferred orientation in the bc8 phase of silicon formed under non-hydrostatic conditions. Microstructural characterization in two orthogonal directions reveals that the preferred orientation is...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 2023-12, Vol.123 (23) |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 23 |
container_start_page | |
container_title | Applied physics letters |
container_volume | 123 |
creator | Butler, Sean L. Partridge, Jeffrey F. Huang, Xingshuo Suarez-Martinez, Irene Marks, Nigel A. Bradby, Jodie E. McCulloch, Dougal G. |
description | High pressure experiments and ab initio calculations are used to investigate unexpected crystallographic preferred orientation in the bc8 phase of silicon formed under non-hydrostatic conditions. Microstructural characterization in two orthogonal directions reveals that the preferred orientation is only visible when the sample is viewed perpendicular to the compression axis. Curiously, the elastic constants of bc8-Si are almost perfectly isotropic, making it counter-intuitive that preferred crystallographic orientation is observed. This conundrum is resolved by tracking the phase transformation pathway and computing the three-dimensional Young's modulus. We find the preferred orientation most likely originates from the highly anisotropic simple-hexagonal phase and is passed on to subsequent daughter phases via displacive phase transformations. Our investigation of preferred orientation in bc8-Si complements other high pressure studies where preferred orientation in silicon phases is often observed but not explained. |
doi_str_mv | 10.1063/5.0170712 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2897189118</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2897189118</sourcerecordid><originalsourceid>FETCH-LOGICAL-c287t-7a995dc93b3282a518a92fb1e3888a4fc71e9ae6a1d1808e876352ce4440e3923</originalsourceid><addsrcrecordid>eNp9kE1LAzEQQIMoWKsH_8GCJ4WtmWR3k3iT4hcUelBPHkKazrYp7WZN0kP_vSnbs5cZhnkzwzxCboFOgDb8sZ5QEFQAOyMjoEKUHECekxGllJeNquGSXMW4yWXNOB-Rn3lwK9cVvi36gC2GgMvCB4ddMsn5rsg9k2P0Kfje2WJnEgZntk_Fu1utj0Mx7gMW8dClNUYXj6sWVpaf7ppctGYb8eaUx-T79eVr-l7O5m8f0-dZaZkUqRRGqXppFV9wJpmpQRrF2gUgl1KaqrUCUBlsDCxBUolSNLxmFquqosgV42NyN-ztg__dY0x64_ehyyc1k0qAVNlBpu4HygYfY_5V98HtTDhooProTtf65C6zDwMbrRs8_AP_AVwWbWM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2897189118</pqid></control><display><type>article</type><title>Origin of preferred orientation in an isotropic material: High pressure synthesis of bc8-Si</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Butler, Sean L. ; Partridge, Jeffrey F. ; Huang, Xingshuo ; Suarez-Martinez, Irene ; Marks, Nigel A. ; Bradby, Jodie E. ; McCulloch, Dougal G.</creator><creatorcontrib>Butler, Sean L. ; Partridge, Jeffrey F. ; Huang, Xingshuo ; Suarez-Martinez, Irene ; Marks, Nigel A. ; Bradby, Jodie E. ; McCulloch, Dougal G.</creatorcontrib><description>High pressure experiments and ab initio calculations are used to investigate unexpected crystallographic preferred orientation in the bc8 phase of silicon formed under non-hydrostatic conditions. Microstructural characterization in two orthogonal directions reveals that the preferred orientation is only visible when the sample is viewed perpendicular to the compression axis. Curiously, the elastic constants of bc8-Si are almost perfectly isotropic, making it counter-intuitive that preferred crystallographic orientation is observed. This conundrum is resolved by tracking the phase transformation pathway and computing the three-dimensional Young's modulus. We find the preferred orientation most likely originates from the highly anisotropic simple-hexagonal phase and is passed on to subsequent daughter phases via displacive phase transformations. Our investigation of preferred orientation in bc8-Si complements other high pressure studies where preferred orientation in silicon phases is often observed but not explained.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0170712</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Crystallography ; Elastic properties ; Hexagonal phase ; High pressure ; Isotropic material ; Modulus of elasticity ; Phase transitions ; Preferred orientation ; Silicon</subject><ispartof>Applied physics letters, 2023-12, Vol.123 (23)</ispartof><rights>Author(s)</rights><rights>2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c287t-7a995dc93b3282a518a92fb1e3888a4fc71e9ae6a1d1808e876352ce4440e3923</cites><orcidid>0000-0003-2372-1284 ; 0000-0002-7468-8616 ; 0009-0000-2537-7304 ; 0000-0002-9560-8400 ; 0000-0001-8491-5176 ; 0000-0003-4548-1955 ; 0000-0002-1877-6574</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0170712$$EHTML$$P50$$Gscitation$$Hfree_for_read</linktohtml><link.rule.ids>314,777,781,791,4498,27905,27906,76133</link.rule.ids></links><search><creatorcontrib>Butler, Sean L.</creatorcontrib><creatorcontrib>Partridge, Jeffrey F.</creatorcontrib><creatorcontrib>Huang, Xingshuo</creatorcontrib><creatorcontrib>Suarez-Martinez, Irene</creatorcontrib><creatorcontrib>Marks, Nigel A.</creatorcontrib><creatorcontrib>Bradby, Jodie E.</creatorcontrib><creatorcontrib>McCulloch, Dougal G.</creatorcontrib><title>Origin of preferred orientation in an isotropic material: High pressure synthesis of bc8-Si</title><title>Applied physics letters</title><description>High pressure experiments and ab initio calculations are used to investigate unexpected crystallographic preferred orientation in the bc8 phase of silicon formed under non-hydrostatic conditions. Microstructural characterization in two orthogonal directions reveals that the preferred orientation is only visible when the sample is viewed perpendicular to the compression axis. Curiously, the elastic constants of bc8-Si are almost perfectly isotropic, making it counter-intuitive that preferred crystallographic orientation is observed. This conundrum is resolved by tracking the phase transformation pathway and computing the three-dimensional Young's modulus. We find the preferred orientation most likely originates from the highly anisotropic simple-hexagonal phase and is passed on to subsequent daughter phases via displacive phase transformations. Our investigation of preferred orientation in bc8-Si complements other high pressure studies where preferred orientation in silicon phases is often observed but not explained.</description><subject>Applied physics</subject><subject>Crystallography</subject><subject>Elastic properties</subject><subject>Hexagonal phase</subject><subject>High pressure</subject><subject>Isotropic material</subject><subject>Modulus of elasticity</subject><subject>Phase transitions</subject><subject>Preferred orientation</subject><subject>Silicon</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQQIMoWKsH_8GCJ4WtmWR3k3iT4hcUelBPHkKazrYp7WZN0kP_vSnbs5cZhnkzwzxCboFOgDb8sZ5QEFQAOyMjoEKUHECekxGllJeNquGSXMW4yWXNOB-Rn3lwK9cVvi36gC2GgMvCB4ddMsn5rsg9k2P0Kfje2WJnEgZntk_Fu1utj0Mx7gMW8dClNUYXj6sWVpaf7ppctGYb8eaUx-T79eVr-l7O5m8f0-dZaZkUqRRGqXppFV9wJpmpQRrF2gUgl1KaqrUCUBlsDCxBUolSNLxmFquqosgV42NyN-ztg__dY0x64_ehyyc1k0qAVNlBpu4HygYfY_5V98HtTDhooProTtf65C6zDwMbrRs8_AP_AVwWbWM</recordid><startdate>20231204</startdate><enddate>20231204</enddate><creator>Butler, Sean L.</creator><creator>Partridge, Jeffrey F.</creator><creator>Huang, Xingshuo</creator><creator>Suarez-Martinez, Irene</creator><creator>Marks, Nigel A.</creator><creator>Bradby, Jodie E.</creator><creator>McCulloch, Dougal G.</creator><general>American Institute of Physics</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-2372-1284</orcidid><orcidid>https://orcid.org/0000-0002-7468-8616</orcidid><orcidid>https://orcid.org/0009-0000-2537-7304</orcidid><orcidid>https://orcid.org/0000-0002-9560-8400</orcidid><orcidid>https://orcid.org/0000-0001-8491-5176</orcidid><orcidid>https://orcid.org/0000-0003-4548-1955</orcidid><orcidid>https://orcid.org/0000-0002-1877-6574</orcidid></search><sort><creationdate>20231204</creationdate><title>Origin of preferred orientation in an isotropic material: High pressure synthesis of bc8-Si</title><author>Butler, Sean L. ; Partridge, Jeffrey F. ; Huang, Xingshuo ; Suarez-Martinez, Irene ; Marks, Nigel A. ; Bradby, Jodie E. ; McCulloch, Dougal G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c287t-7a995dc93b3282a518a92fb1e3888a4fc71e9ae6a1d1808e876352ce4440e3923</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Applied physics</topic><topic>Crystallography</topic><topic>Elastic properties</topic><topic>Hexagonal phase</topic><topic>High pressure</topic><topic>Isotropic material</topic><topic>Modulus of elasticity</topic><topic>Phase transitions</topic><topic>Preferred orientation</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Butler, Sean L.</creatorcontrib><creatorcontrib>Partridge, Jeffrey F.</creatorcontrib><creatorcontrib>Huang, Xingshuo</creatorcontrib><creatorcontrib>Suarez-Martinez, Irene</creatorcontrib><creatorcontrib>Marks, Nigel A.</creatorcontrib><creatorcontrib>Bradby, Jodie E.</creatorcontrib><creatorcontrib>McCulloch, Dougal G.</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Butler, Sean L.</au><au>Partridge, Jeffrey F.</au><au>Huang, Xingshuo</au><au>Suarez-Martinez, Irene</au><au>Marks, Nigel A.</au><au>Bradby, Jodie E.</au><au>McCulloch, Dougal G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Origin of preferred orientation in an isotropic material: High pressure synthesis of bc8-Si</atitle><jtitle>Applied physics letters</jtitle><date>2023-12-04</date><risdate>2023</risdate><volume>123</volume><issue>23</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>High pressure experiments and ab initio calculations are used to investigate unexpected crystallographic preferred orientation in the bc8 phase of silicon formed under non-hydrostatic conditions. Microstructural characterization in two orthogonal directions reveals that the preferred orientation is only visible when the sample is viewed perpendicular to the compression axis. Curiously, the elastic constants of bc8-Si are almost perfectly isotropic, making it counter-intuitive that preferred crystallographic orientation is observed. This conundrum is resolved by tracking the phase transformation pathway and computing the three-dimensional Young's modulus. We find the preferred orientation most likely originates from the highly anisotropic simple-hexagonal phase and is passed on to subsequent daughter phases via displacive phase transformations. Our investigation of preferred orientation in bc8-Si complements other high pressure studies where preferred orientation in silicon phases is often observed but not explained.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0170712</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-2372-1284</orcidid><orcidid>https://orcid.org/0000-0002-7468-8616</orcidid><orcidid>https://orcid.org/0009-0000-2537-7304</orcidid><orcidid>https://orcid.org/0000-0002-9560-8400</orcidid><orcidid>https://orcid.org/0000-0001-8491-5176</orcidid><orcidid>https://orcid.org/0000-0003-4548-1955</orcidid><orcidid>https://orcid.org/0000-0002-1877-6574</orcidid><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0003-6951 |
ispartof | Applied physics letters, 2023-12, Vol.123 (23) |
issn | 0003-6951 1077-3118 |
language | eng |
recordid | cdi_proquest_journals_2897189118 |
source | AIP Journals Complete; Alma/SFX Local Collection |
subjects | Applied physics Crystallography Elastic properties Hexagonal phase High pressure Isotropic material Modulus of elasticity Phase transitions Preferred orientation Silicon |
title | Origin of preferred orientation in an isotropic material: High pressure synthesis of bc8-Si |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T12%3A15%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Origin%20of%20preferred%20orientation%20in%20an%20isotropic%20material:%20High%20pressure%20synthesis%20of%20bc8-Si&rft.jtitle=Applied%20physics%20letters&rft.au=Butler,%20Sean%20L.&rft.date=2023-12-04&rft.volume=123&rft.issue=23&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/5.0170712&rft_dat=%3Cproquest_cross%3E2897189118%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2897189118&rft_id=info:pmid/&rfr_iscdi=true |