First principles study of photogalvanic effect of monolayer SnS

The photogalvanic effect of monolayer SnS was investigated at a small bias voltage under perpendicular irradiation using density functional theory combined with the non-equilibrium Green’s function method. The photocurrent was generated over the entire visible light range, and it was saturated at a...

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Veröffentlicht in:Nanomaterials and nanotechnology 2022-04, Vol.12, p.184798042210982
Hauptverfasser: Yu, Deyang, Hu, YangYang, Ku, Ruiqi, Zhang, Guiling, Li, Weiqi, Jiang, Yongyuan
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Zhang, Guiling
Li, Weiqi
Jiang, Yongyuan
description The photogalvanic effect of monolayer SnS was investigated at a small bias voltage under perpendicular irradiation using density functional theory combined with the non-equilibrium Green’s function method. The photocurrent was generated over the entire visible light range, and it was saturated at a small bias voltage for photon energies of 2.4, 2.6, 3.2 and 3.4 eV. The photocurrent shows cosine dependence of the polarization angle, which is attributed to the second-order response to the photoelectric field. These results provide a deeper understanding of the photogalvanic properties of the 2D SnS nanosheet based devices.
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subjects Bias
Density functional theory
Electric potential
First principles
Green's functions
Monolayers
Photoelectric effect
Photoelectric emission
Photoelectricity
Trigonometric functions
Voltage
title First principles study of photogalvanic effect of monolayer SnS
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