First principles study of photogalvanic effect of monolayer SnS
The photogalvanic effect of monolayer SnS was investigated at a small bias voltage under perpendicular irradiation using density functional theory combined with the non-equilibrium Green’s function method. The photocurrent was generated over the entire visible light range, and it was saturated at a...
Gespeichert in:
Veröffentlicht in: | Nanomaterials and nanotechnology 2022-04, Vol.12, p.184798042210982 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | 184798042210982 |
container_title | Nanomaterials and nanotechnology |
container_volume | 12 |
creator | Yu, Deyang Hu, YangYang Ku, Ruiqi Zhang, Guiling Li, Weiqi Jiang, Yongyuan |
description | The photogalvanic effect of monolayer SnS was investigated at a small bias voltage under perpendicular irradiation using density functional theory combined with the non-equilibrium Green’s function method. The photocurrent was generated over the entire visible light range, and it was saturated at a small bias voltage for photon energies of 2.4, 2.6, 3.2 and 3.4 eV. The photocurrent shows cosine dependence of the polarization angle, which is attributed to the second-order response to the photoelectric field. These results provide a deeper understanding of the photogalvanic properties of the 2D SnS nanosheet based devices. |
doi_str_mv | 10.1177/18479804221098299 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2896886669</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sage_id>10.1177_18479804221098299</sage_id><sourcerecordid>2896886669</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-bf466a3729fb5ce7609f2a7b59cd0f0b40237e1fe94fd921959303ef9633fef13</originalsourceid><addsrcrecordid>eNp1UE1Lw0AQXUTBUvsDvAU8p-5Hsps5iRSrQsFD9Rw225makmbjbir035tQQUGcywyP98E8xq4FnwthzK0oMgMFz6QUHAoJcMYmI5aO4Pmv-5LNYtzxYSATSpoJu1vWIfZJF-rW1V2DMYn9YXNMPCXdu-_91jaftq1dgkTo-hHf-9Y39oghWbfrK3ZBtok4-95T9rZ8eF08pauXx-fF_Sp1Ks_7tKJMa6uMBKpyh0ZzIGlNlYPbcOJVxqUyKAghow1IATkorpBAK0VIQk3Zzcm3C_7jgLEvd_4Q2iGylAXootBaw8ASJ5YLPsaAVA6P7W04loKXY1Xln6oGzfykiXaLP67_C74AjVtn9A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2896886669</pqid></control><display><type>article</type><title>First principles study of photogalvanic effect of monolayer SnS</title><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><creator>Yu, Deyang ; Hu, YangYang ; Ku, Ruiqi ; Zhang, Guiling ; Li, Weiqi ; Jiang, Yongyuan</creator><creatorcontrib>Yu, Deyang ; Hu, YangYang ; Ku, Ruiqi ; Zhang, Guiling ; Li, Weiqi ; Jiang, Yongyuan</creatorcontrib><description>The photogalvanic effect of monolayer SnS was investigated at a small bias voltage under perpendicular irradiation using density functional theory combined with the non-equilibrium Green’s function method. The photocurrent was generated over the entire visible light range, and it was saturated at a small bias voltage for photon energies of 2.4, 2.6, 3.2 and 3.4 eV. The photocurrent shows cosine dependence of the polarization angle, which is attributed to the second-order response to the photoelectric field. These results provide a deeper understanding of the photogalvanic properties of the 2D SnS nanosheet based devices.</description><identifier>ISSN: 1847-9804</identifier><identifier>EISSN: 1847-9804</identifier><identifier>DOI: 10.1177/18479804221098299</identifier><language>eng</language><publisher>London, England: SAGE Publications</publisher><subject>Bias ; Density functional theory ; Electric potential ; First principles ; Green's functions ; Monolayers ; Photoelectric effect ; Photoelectric emission ; Photoelectricity ; Trigonometric functions ; Voltage</subject><ispartof>Nanomaterials and nanotechnology, 2022-04, Vol.12, p.184798042210982</ispartof><rights>The Author(s) 2022</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-bf466a3729fb5ce7609f2a7b59cd0f0b40237e1fe94fd921959303ef9633fef13</citedby><cites>FETCH-LOGICAL-c355t-bf466a3729fb5ce7609f2a7b59cd0f0b40237e1fe94fd921959303ef9633fef13</cites><orcidid>0000-0003-3413-5926</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,865,27928,27929</link.rule.ids></links><search><creatorcontrib>Yu, Deyang</creatorcontrib><creatorcontrib>Hu, YangYang</creatorcontrib><creatorcontrib>Ku, Ruiqi</creatorcontrib><creatorcontrib>Zhang, Guiling</creatorcontrib><creatorcontrib>Li, Weiqi</creatorcontrib><creatorcontrib>Jiang, Yongyuan</creatorcontrib><title>First principles study of photogalvanic effect of monolayer SnS</title><title>Nanomaterials and nanotechnology</title><description>The photogalvanic effect of monolayer SnS was investigated at a small bias voltage under perpendicular irradiation using density functional theory combined with the non-equilibrium Green’s function method. The photocurrent was generated over the entire visible light range, and it was saturated at a small bias voltage for photon energies of 2.4, 2.6, 3.2 and 3.4 eV. The photocurrent shows cosine dependence of the polarization angle, which is attributed to the second-order response to the photoelectric field. These results provide a deeper understanding of the photogalvanic properties of the 2D SnS nanosheet based devices.</description><subject>Bias</subject><subject>Density functional theory</subject><subject>Electric potential</subject><subject>First principles</subject><subject>Green's functions</subject><subject>Monolayers</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Photoelectricity</subject><subject>Trigonometric functions</subject><subject>Voltage</subject><issn>1847-9804</issn><issn>1847-9804</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>AFRWT</sourceid><recordid>eNp1UE1Lw0AQXUTBUvsDvAU8p-5Hsps5iRSrQsFD9Rw225makmbjbir035tQQUGcywyP98E8xq4FnwthzK0oMgMFz6QUHAoJcMYmI5aO4Pmv-5LNYtzxYSATSpoJu1vWIfZJF-rW1V2DMYn9YXNMPCXdu-_91jaftq1dgkTo-hHf-9Y39oghWbfrK3ZBtok4-95T9rZ8eF08pauXx-fF_Sp1Ks_7tKJMa6uMBKpyh0ZzIGlNlYPbcOJVxqUyKAghow1IATkorpBAK0VIQk3Zzcm3C_7jgLEvd_4Q2iGylAXootBaw8ASJ5YLPsaAVA6P7W04loKXY1Xln6oGzfykiXaLP67_C74AjVtn9A</recordid><startdate>20220401</startdate><enddate>20220401</enddate><creator>Yu, Deyang</creator><creator>Hu, YangYang</creator><creator>Ku, Ruiqi</creator><creator>Zhang, Guiling</creator><creator>Li, Weiqi</creator><creator>Jiang, Yongyuan</creator><general>SAGE Publications</general><general>Hindawi Limited</general><scope>AFRWT</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3413-5926</orcidid></search><sort><creationdate>20220401</creationdate><title>First principles study of photogalvanic effect of monolayer SnS</title><author>Yu, Deyang ; Hu, YangYang ; Ku, Ruiqi ; Zhang, Guiling ; Li, Weiqi ; Jiang, Yongyuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-bf466a3729fb5ce7609f2a7b59cd0f0b40237e1fe94fd921959303ef9633fef13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Bias</topic><topic>Density functional theory</topic><topic>Electric potential</topic><topic>First principles</topic><topic>Green's functions</topic><topic>Monolayers</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Photoelectricity</topic><topic>Trigonometric functions</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yu, Deyang</creatorcontrib><creatorcontrib>Hu, YangYang</creatorcontrib><creatorcontrib>Ku, Ruiqi</creatorcontrib><creatorcontrib>Zhang, Guiling</creatorcontrib><creatorcontrib>Li, Weiqi</creatorcontrib><creatorcontrib>Jiang, Yongyuan</creatorcontrib><collection>Sage Journals GOLD Open Access 2024</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nanomaterials and nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yu, Deyang</au><au>Hu, YangYang</au><au>Ku, Ruiqi</au><au>Zhang, Guiling</au><au>Li, Weiqi</au><au>Jiang, Yongyuan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>First principles study of photogalvanic effect of monolayer SnS</atitle><jtitle>Nanomaterials and nanotechnology</jtitle><date>2022-04-01</date><risdate>2022</risdate><volume>12</volume><spage>184798042210982</spage><pages>184798042210982-</pages><issn>1847-9804</issn><eissn>1847-9804</eissn><abstract>The photogalvanic effect of monolayer SnS was investigated at a small bias voltage under perpendicular irradiation using density functional theory combined with the non-equilibrium Green’s function method. The photocurrent was generated over the entire visible light range, and it was saturated at a small bias voltage for photon energies of 2.4, 2.6, 3.2 and 3.4 eV. The photocurrent shows cosine dependence of the polarization angle, which is attributed to the second-order response to the photoelectric field. These results provide a deeper understanding of the photogalvanic properties of the 2D SnS nanosheet based devices.</abstract><cop>London, England</cop><pub>SAGE Publications</pub><doi>10.1177/18479804221098299</doi><orcidid>https://orcid.org/0000-0003-3413-5926</orcidid><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 1847-9804 |
ispartof | Nanomaterials and nanotechnology, 2022-04, Vol.12, p.184798042210982 |
issn | 1847-9804 1847-9804 |
language | eng |
recordid | cdi_proquest_journals_2896886669 |
source | DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals |
subjects | Bias Density functional theory Electric potential First principles Green's functions Monolayers Photoelectric effect Photoelectric emission Photoelectricity Trigonometric functions Voltage |
title | First principles study of photogalvanic effect of monolayer SnS |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-16T22%3A54%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=First%20principles%20study%20of%20photogalvanic%20effect%20of%20monolayer%20SnS&rft.jtitle=Nanomaterials%20and%20nanotechnology&rft.au=Yu,%20Deyang&rft.date=2022-04-01&rft.volume=12&rft.spage=184798042210982&rft.pages=184798042210982-&rft.issn=1847-9804&rft.eissn=1847-9804&rft_id=info:doi/10.1177/18479804221098299&rft_dat=%3Cproquest_cross%3E2896886669%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2896886669&rft_id=info:pmid/&rft_sage_id=10.1177_18479804221098299&rfr_iscdi=true |