Analysis of Single Event Response and Hardening Methods in 1.2 kV SiC Power MOSFET With Multicell and Termination Structure

In this article, the single event response and hardening methods of 1.2 kV silicon carbide (SiC) power MOSFET with multicell and field limiting rings (FLRs) termination structure are investigated by using numerical simulations. Our studies reveal that the termination region is insensitive to single-...

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Veröffentlicht in:	IEEE transactions on electron devices 2023-12, Vol.70 (12), p.6459-6464
Hauptverfasser:	Lu, Jiang, Song, Wenjun, Liu, Tao, Tang, Jun, Zhao, Wen, Li, Duoli, Li, Bo
Format:	Artikel
Sprache:	eng
Schlagworte:	Contact holes Electric contacts Electric field Electric fields field limiting rings (FLRs) Hardening Ions Junctions Kirk effect Metal plates MOSFET MOSFETs multicell Semiconductor process modeling Silicon carbide silicon carbide (SiC) power MOSFET single event burnout (SEB) termination Transient analysis
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