Spark plasma sintering on the thermoelectric sulfide Ta2PdS6
We have prepared a dense ceramic sample of a novel thermoelectric sulfide Ta2PdS6 by means of spark plasma sintering technique under a uniaxial pressure. The Rietveld analyses of the X-ray diffraction patterns have clarified occurrence of weak preferred orientation in the sintering process. Resistiv...
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Veröffentlicht in: | Journal of the Ceramic Society of Japan 2023/10/01, Vol.131(10), pp.669-674 |
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creator | Nakano, Akitoshi Suekuni, Koichiro Hattori, Nanako Terasaki, Ichiro |
description | We have prepared a dense ceramic sample of a novel thermoelectric sulfide Ta2PdS6 by means of spark plasma sintering technique under a uniaxial pressure. The Rietveld analyses of the X-ray diffraction patterns have clarified occurrence of weak preferred orientation in the sintering process. Resistivity, thermopower, and Hall resistivity measurements on the ceramic sample have indicated that it shows higher carrier density and lower carrier mobility than a single crystal. The inferior carrier mobility in the ceramic sample may partly come from increased point-defect and/or grain-boundary scattering, to which poor power factor is attributed. |
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The Rietveld analyses of the X-ray diffraction patterns have clarified occurrence of weak preferred orientation in the sintering process. Resistivity, thermopower, and Hall resistivity measurements on the ceramic sample have indicated that it shows higher carrier density and lower carrier mobility than a single crystal. The inferior carrier mobility in the ceramic sample may partly come from increased point-defect and/or grain-boundary scattering, to which poor power factor is attributed.</description><identifier>ISSN: 1882-0743</identifier><identifier>EISSN: 1348-6535</identifier><identifier>DOI: 10.2109/jcersj2.23038</identifier><language>eng ; jpn</language><publisher>Tokyo: The Ceramic Society of Japan</publisher><subject>Carrier density ; Carrier mobility ; Ceramics ; Crystal defects ; Diffraction patterns ; Electrical resistivity ; Low dimensionality ; Point defects ; Power factor ; Preferred orientation ; Single crystals ; Spark plasma sintering ; Sulfide ; Thermoelectric effect ; Thermoelectricity</subject><ispartof>Journal of the Ceramic Society of Japan, 2023/10/01, Vol.131(10), pp.669-674</ispartof><rights>2023 The Ceramic Society of Japan</rights><rights>2023. This work is published under https://creativecommons.org/licenses/by/4.0/deed.ja (the “License”). 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Japan</addtitle><description>We have prepared a dense ceramic sample of a novel thermoelectric sulfide Ta2PdS6 by means of spark plasma sintering technique under a uniaxial pressure. The Rietveld analyses of the X-ray diffraction patterns have clarified occurrence of weak preferred orientation in the sintering process. Resistivity, thermopower, and Hall resistivity measurements on the ceramic sample have indicated that it shows higher carrier density and lower carrier mobility than a single crystal. The inferior carrier mobility in the ceramic sample may partly come from increased point-defect and/or grain-boundary scattering, to which poor power factor is attributed.</description><subject>Carrier density</subject><subject>Carrier mobility</subject><subject>Ceramics</subject><subject>Crystal defects</subject><subject>Diffraction patterns</subject><subject>Electrical resistivity</subject><subject>Low dimensionality</subject><subject>Point defects</subject><subject>Power factor</subject><subject>Preferred orientation</subject><subject>Single crystals</subject><subject>Spark plasma sintering</subject><subject>Sulfide</subject><subject>Thermoelectric effect</subject><subject>Thermoelectricity</subject><issn>1882-0743</issn><issn>1348-6535</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNo9kEFLw0AQhRdRsFaP3gOeU2d3sskGvEixVSgotJ6XzWbSJqZJ3E0P_nuTtvQwvDl884b3GHvkMBMc0ufKkvOVmAkEVFdswjFSYSxRXg-7UiKEJMJbdud9BRCLCNWEvaw7436CrjZ-bwJfNj25stkGbRP0OxrH7VuqyfautIE_1EWZU7Ax4itfx_fspjC1p4ezTtn34m0zfw9Xn8uP-esqtBEkfZhnkYhNnomcMgIreYaQJKqIY4ugZIG5yFQOhJShQcllIgHSBBQRpRIJp-zp5Nu59vdAvtdVe3DN8FILpVKl5JByoMITZV3rvaNCd67cG_enOeixIH0uSB8LGvjFia98b7Z0oY3rS1vThebIR4dRjocXwO6M09TgP10gcgs</recordid><startdate>20231001</startdate><enddate>20231001</enddate><creator>Nakano, Akitoshi</creator><creator>Suekuni, Koichiro</creator><creator>Hattori, Nanako</creator><creator>Terasaki, Ichiro</creator><general>The Ceramic Society of Japan</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20231001</creationdate><title>Spark plasma sintering on the thermoelectric sulfide Ta2PdS6</title><author>Nakano, Akitoshi ; Suekuni, Koichiro ; Hattori, Nanako ; Terasaki, Ichiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c407t-db426adb2debe0c51b30778f66c3085f3d2b8d0e3eb3a351575009708eee953e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>Carrier density</topic><topic>Carrier mobility</topic><topic>Ceramics</topic><topic>Crystal defects</topic><topic>Diffraction patterns</topic><topic>Electrical resistivity</topic><topic>Low dimensionality</topic><topic>Point defects</topic><topic>Power factor</topic><topic>Preferred orientation</topic><topic>Single crystals</topic><topic>Spark plasma sintering</topic><topic>Sulfide</topic><topic>Thermoelectric effect</topic><topic>Thermoelectricity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakano, Akitoshi</creatorcontrib><creatorcontrib>Suekuni, Koichiro</creatorcontrib><creatorcontrib>Hattori, Nanako</creatorcontrib><creatorcontrib>Terasaki, Ichiro</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the Ceramic Society of Japan</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakano, Akitoshi</au><au>Suekuni, Koichiro</au><au>Hattori, Nanako</au><au>Terasaki, Ichiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spark plasma sintering on the thermoelectric sulfide Ta2PdS6</atitle><jtitle>Journal of the Ceramic Society of Japan</jtitle><addtitle>J. Ceram. Soc. Japan</addtitle><date>2023-10-01</date><risdate>2023</risdate><volume>131</volume><issue>10</issue><spage>669</spage><epage>674</epage><pages>669-674</pages><artnum>23038</artnum><issn>1882-0743</issn><eissn>1348-6535</eissn><abstract>We have prepared a dense ceramic sample of a novel thermoelectric sulfide Ta2PdS6 by means of spark plasma sintering technique under a uniaxial pressure. The Rietveld analyses of the X-ray diffraction patterns have clarified occurrence of weak preferred orientation in the sintering process. Resistivity, thermopower, and Hall resistivity measurements on the ceramic sample have indicated that it shows higher carrier density and lower carrier mobility than a single crystal. 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subjects | Carrier density Carrier mobility Ceramics Crystal defects Diffraction patterns Electrical resistivity Low dimensionality Point defects Power factor Preferred orientation Single crystals Spark plasma sintering Sulfide Thermoelectric effect Thermoelectricity |
title | Spark plasma sintering on the thermoelectric sulfide Ta2PdS6 |
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