p-type hexagonal boron nitride films with bis(cyclopentadienyl) magnesium as a doping gas in halide vapor phase epitaxy

We report an in situ carbon doping method for fabricating p-type hexagonal boron nitride thin films with a halide vapor phase epitaxy system by introducing bis(cyclopentadienyl) magnesium as a doping gas. The hBN films exhibited a growth rate of 3 μm/h, while the doped hBN films showed a considerabl...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2023-11, Vol.123 (20)
Hauptverfasser:	Liu, Xiaohang, Fan, Shengda, Chen, Xi, Liu, Jingrun, Zhao, Jihong, Liu, Xiuhuan, Hou, Lixin, Gao, Yanjun, Chen, Zhanguo
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Boron nitride Carbon Chemical bonds Doping Electrical resistivity Impurities Magnesium Photoelectrons Room temperature Temperature dependence Thin films Vapor phase epitaxy Vapor phases X ray photoelectron spectroscopy
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!