Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity
In this work, an improved method of metal-organic chemical vapor deposition was utilized to grow high-quality AlPN/GaN heterostructures. The characteristics of AlPN those are essential to achieving high linearity in the resulting devices were then investigated. High linearity AlPN/GaN high electron...
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| Veröffentlicht in: | Applied physics letters 2023-11, Vol.123 (20) |
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| container_title | Applied physics letters |
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| creator | Yao, Yixin Zhang, Yachao Zhu, Jiaduo Dang, Kui Su, Chunxu Ma, Jinbang Chen, Kai Wang, Baiqi Liu, Wenjun Xu, Shengrui Zhao, Shenglei Zhang, Jincheng Hao, Yue |
| description | In this work, an improved method of metal-organic chemical vapor deposition was utilized to grow high-quality AlPN/GaN heterostructures. The characteristics of AlPN those are essential to achieving high linearity in the resulting devices were then investigated. High linearity AlPN/GaN high electron mobility transistors (HEMTs) with flatter transconductance curves were fabricated, in which the gate voltage swings are 1.85 and 4.35 V at 300 and 400 K when Gm drops 5% from Gm,max. Additionally, the impact of P anti-site defects and surface states on the high linearity of AlPN/GaN HEMTs at different temperatures was discussed. It was found that while both factors benefit linearity at room temperature, only the P anti-site defects have a positive effect on linearity at high temperatures. The results demonstrate the significant advantages of AlPN-based structures in high linearity device applications and provide instructive principles for improving linearity. |
| doi_str_mv | 10.1063/5.0172376 |
| format | Article |
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The characteristics of AlPN those are essential to achieving high linearity in the resulting devices were then investigated. High linearity AlPN/GaN high electron mobility transistors (HEMTs) with flatter transconductance curves were fabricated, in which the gate voltage swings are 1.85 and 4.35 V at 300 and 400 K when Gm drops 5% from Gm,max. Additionally, the impact of P anti-site defects and surface states on the high linearity of AlPN/GaN HEMTs at different temperatures was discussed. It was found that while both factors benefit linearity at room temperature, only the P anti-site defects have a positive effect on linearity at high temperatures. The results demonstrate the significant advantages of AlPN-based structures in high linearity device applications and provide instructive principles for improving linearity.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0172376</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Defects ; Gallium nitrides ; Heterostructures ; High electron mobility transistors ; High temperature ; Linearity ; Metalorganic chemical vapor deposition ; Organic chemistry ; Room temperature ; Semiconductor devices ; Transconductance</subject><ispartof>Applied physics letters, 2023-11, Vol.123 (20)</ispartof><rights>Author(s)</rights><rights>2023 Author(s). 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The characteristics of AlPN those are essential to achieving high linearity in the resulting devices were then investigated. High linearity AlPN/GaN high electron mobility transistors (HEMTs) with flatter transconductance curves were fabricated, in which the gate voltage swings are 1.85 and 4.35 V at 300 and 400 K when Gm drops 5% from Gm,max. Additionally, the impact of P anti-site defects and surface states on the high linearity of AlPN/GaN HEMTs at different temperatures was discussed. It was found that while both factors benefit linearity at room temperature, only the P anti-site defects have a positive effect on linearity at high temperatures. The results demonstrate the significant advantages of AlPN-based structures in high linearity device applications and provide instructive principles for improving linearity.</description><subject>Applied physics</subject><subject>Defects</subject><subject>Gallium nitrides</subject><subject>Heterostructures</subject><subject>High electron mobility transistors</subject><subject>High temperature</subject><subject>Linearity</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Organic chemistry</subject><subject>Room temperature</subject><subject>Semiconductor devices</subject><subject>Transconductance</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp90EtLAzEQAOAgCtbHwX8Q8KSwbWaz2WSPpWgVShXU85Lm4aZsNzXJKv33rmzPnoZhvnkwCN0AmQIp6YxNCfCc8vIETYBwnlEAcYomhBCalRWDc3QR43ZIWU7pBMm31OsD9hanxuB5-7qeLeUaN-6zwaY1KgXf4Z3fuNalA05BdtHF5EPEPy412O32wX8bPVaU73SvkuyUwa3rjAxD0xU6s7KN5voYL9HH48P74ilbvSyfF_NVpnLBUybLspB0Y6DUmlrDbEFB6Y1WloDkUFmd51SwykqSk6rkAgZZKAWUsUqBopfodpw7XPTVm5jqre9DN6yscyGqooCKi0HdjUoFH2Mwtt4Ht5PhUAOp_z5Ys_r4wcHejzYql2RyvvsH_wJ6mXEm</recordid><startdate>20231113</startdate><enddate>20231113</enddate><creator>Yao, Yixin</creator><creator>Zhang, Yachao</creator><creator>Zhu, Jiaduo</creator><creator>Dang, Kui</creator><creator>Su, Chunxu</creator><creator>Ma, Jinbang</creator><creator>Chen, Kai</creator><creator>Wang, Baiqi</creator><creator>Liu, Wenjun</creator><creator>Xu, Shengrui</creator><creator>Zhao, Shenglei</creator><creator>Zhang, Jincheng</creator><creator>Hao, Yue</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3737-3436</orcidid><orcidid>https://orcid.org/0000-0002-0345-6121</orcidid><orcidid>https://orcid.org/0000-0001-7876-8878</orcidid><orcidid>https://orcid.org/0000-0002-1406-1088</orcidid><orcidid>https://orcid.org/0000-0002-9484-2035</orcidid><orcidid>https://orcid.org/0000-0003-0816-1434</orcidid><orcidid>https://orcid.org/0000-0002-9526-4871</orcidid><orcidid>https://orcid.org/0000-0001-6558-1107</orcidid></search><sort><creationdate>20231113</creationdate><title>Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity</title><author>Yao, Yixin ; 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The characteristics of AlPN those are essential to achieving high linearity in the resulting devices were then investigated. High linearity AlPN/GaN high electron mobility transistors (HEMTs) with flatter transconductance curves were fabricated, in which the gate voltage swings are 1.85 and 4.35 V at 300 and 400 K when Gm drops 5% from Gm,max. Additionally, the impact of P anti-site defects and surface states on the high linearity of AlPN/GaN HEMTs at different temperatures was discussed. It was found that while both factors benefit linearity at room temperature, only the P anti-site defects have a positive effect on linearity at high temperatures. 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| subjects | Applied physics Defects Gallium nitrides Heterostructures High electron mobility transistors High temperature Linearity Metalorganic chemical vapor deposition Organic chemistry Room temperature Semiconductor devices Transconductance |
| title | Study of the AlPN/GaN high electron mobility transistors with improved transconductance linearity |
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