Determination of lateral strain in InGaAsSb alloys and its effect on structural and optical properties
In x Ga 1 - x As y Sb 1 - y epilayers with a fixed In content of x = 0.145 were grown on GaSb(100) substrates using liquid-phase epitaxy (LPE). The lattice mismatch between the quaternary epilayers and substrates was analyzed for different As contents ( y ) by X-ray ω -2 θ . Epilayers with As conten...
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| creator | González-Morales, M. A. Villa-Martínez, G. Cruz-Bueno, J. J. Ramírez-López, M. Camacho-Reynoso, M. Rodríguez-Fragoso, P. Mendoza-Álvarez, J. G. Casallas-Moreno, Y. L. Herrera-Pérez, J. L. |
| description | In
x
Ga
1
-
x
As
y
Sb
1
-
y
epilayers with a fixed In content of
x
= 0.145 were grown on GaSb(100) substrates using liquid-phase epitaxy (LPE). The lattice mismatch between the quaternary epilayers and substrates was analyzed for different As contents (
y
) by X-ray
ω
-2
θ
. Epilayers with As content between
y
= 0.120 and
y
= 0.124 exhibited a positive lattice mismatch, leading to compressive strain. These samples showed a high crystalline quality and flat surfaces, as confirmed by high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). Quaternary alloys with As content between
y
= 0.133 and
y
= 0.141 displayed a negative lattice mismatch, resulting in tensile strain. Structural defects in these samples were evidenced by HR-XRD and on AFM micrographs. Raman measurements also revealed that lateral strain has a direct impact on the intensities of the LO-like, phonon–plasmon and disorder-activated longitudinal acoustic modes. For all In
x
Ga
1
-
x
As
y
Sb
1
-
y
films, photoluminescence (PL) spectra showed a bound exciton (BE) transition, with additional features observed in samples under tensile strain, indicating the involvement of native defect centers and donor–acceptor pairs. This study provides new insights into the effect of lateral strain on the crystalline and surface quality, and optical properties of quaternary alloys, relevant for novel optoelectronic applications. |
| doi_str_mv | 10.1007/s10853-023-08991-6 |
| format | Article |
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x
Ga
1
-
x
As
y
Sb
1
-
y
epilayers with a fixed In content of
x
= 0.145 were grown on GaSb(100) substrates using liquid-phase epitaxy (LPE). The lattice mismatch between the quaternary epilayers and substrates was analyzed for different As contents (
y
) by X-ray
ω
-2
θ
. Epilayers with As content between
y
= 0.120 and
y
= 0.124 exhibited a positive lattice mismatch, leading to compressive strain. These samples showed a high crystalline quality and flat surfaces, as confirmed by high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). Quaternary alloys with As content between
y
= 0.133 and
y
= 0.141 displayed a negative lattice mismatch, resulting in tensile strain. Structural defects in these samples were evidenced by HR-XRD and on AFM micrographs. Raman measurements also revealed that lateral strain has a direct impact on the intensities of the LO-like, phonon–plasmon and disorder-activated longitudinal acoustic modes. For all In
x
Ga
1
-
x
As
y
Sb
1
-
y
films, photoluminescence (PL) spectra showed a bound exciton (BE) transition, with additional features observed in samples under tensile strain, indicating the involvement of native defect centers and donor–acceptor pairs. This study provides new insights into the effect of lateral strain on the crystalline and surface quality, and optical properties of quaternary alloys, relevant for novel optoelectronic applications.</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1007/s10853-023-08991-6</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Alloys ; Atomic force microscopy ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Classical Mechanics ; Compressive properties ; Crystal defects ; Crystallography and Scattering Methods ; Diffraction ; Electronic Materials ; Epitaxial growth ; Epitaxy ; Excitons ; Flat surfaces ; Force and energy ; Lattice vibration ; Liquid phase epitaxy ; Liquid phases ; Materials Science ; Optical properties ; Optoelectronics ; Photoluminescence ; Photomicrographs ; Polymer Sciences ; Quaternary alloys ; Solid Mechanics ; Specialty metals industry ; Substrates ; Surface properties ; Tensile strain ; X-ray diffraction ; X-rays</subject><ispartof>Journal of materials science, 2023-11, Vol.58 (41), p.16172-16183</ispartof><rights>The Author(s) 2023</rights><rights>COPYRIGHT 2023 Springer</rights><rights>The Author(s) 2023. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c436t-9c92fa6a8cbd3cde5231eefd43264ffd6c859c379107ddcec5faa1317389282a3</citedby><cites>FETCH-LOGICAL-c436t-9c92fa6a8cbd3cde5231eefd43264ffd6c859c379107ddcec5faa1317389282a3</cites><orcidid>0000-0003-2782-6454 ; 0000-0003-4131-2345</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10853-023-08991-6$$EPDF$$P50$$Gspringer$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10853-023-08991-6$$EHTML$$P50$$Gspringer$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>González-Morales, M. A.</creatorcontrib><creatorcontrib>Villa-Martínez, G.</creatorcontrib><creatorcontrib>Cruz-Bueno, J. J.</creatorcontrib><creatorcontrib>Ramírez-López, M.</creatorcontrib><creatorcontrib>Camacho-Reynoso, M.</creatorcontrib><creatorcontrib>Rodríguez-Fragoso, P.</creatorcontrib><creatorcontrib>Mendoza-Álvarez, J. G.</creatorcontrib><creatorcontrib>Casallas-Moreno, Y. L.</creatorcontrib><creatorcontrib>Herrera-Pérez, J. L.</creatorcontrib><title>Determination of lateral strain in InGaAsSb alloys and its effect on structural and optical properties</title><title>Journal of materials science</title><addtitle>J Mater Sci</addtitle><description>In
x
Ga
1
-
x
As
y
Sb
1
-
y
epilayers with a fixed In content of
x
= 0.145 were grown on GaSb(100) substrates using liquid-phase epitaxy (LPE). The lattice mismatch between the quaternary epilayers and substrates was analyzed for different As contents (
y
) by X-ray
ω
-2
θ
. Epilayers with As content between
y
= 0.120 and
y
= 0.124 exhibited a positive lattice mismatch, leading to compressive strain. These samples showed a high crystalline quality and flat surfaces, as confirmed by high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). Quaternary alloys with As content between
y
= 0.133 and
y
= 0.141 displayed a negative lattice mismatch, resulting in tensile strain. Structural defects in these samples were evidenced by HR-XRD and on AFM micrographs. Raman measurements also revealed that lateral strain has a direct impact on the intensities of the LO-like, phonon–plasmon and disorder-activated longitudinal acoustic modes. For all In
x
Ga
1
-
x
As
y
Sb
1
-
y
films, photoluminescence (PL) spectra showed a bound exciton (BE) transition, with additional features observed in samples under tensile strain, indicating the involvement of native defect centers and donor–acceptor pairs. This study provides new insights into the effect of lateral strain on the crystalline and surface quality, and optical properties of quaternary alloys, relevant for novel optoelectronic applications.</description><subject>Alloys</subject><subject>Atomic force microscopy</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Classical Mechanics</subject><subject>Compressive properties</subject><subject>Crystal defects</subject><subject>Crystallography and Scattering Methods</subject><subject>Diffraction</subject><subject>Electronic Materials</subject><subject>Epitaxial growth</subject><subject>Epitaxy</subject><subject>Excitons</subject><subject>Flat surfaces</subject><subject>Force and energy</subject><subject>Lattice vibration</subject><subject>Liquid phase epitaxy</subject><subject>Liquid phases</subject><subject>Materials Science</subject><subject>Optical properties</subject><subject>Optoelectronics</subject><subject>Photoluminescence</subject><subject>Photomicrographs</subject><subject>Polymer Sciences</subject><subject>Quaternary alloys</subject><subject>Solid Mechanics</subject><subject>Specialty metals industry</subject><subject>Substrates</subject><subject>Surface properties</subject><subject>Tensile strain</subject><subject>X-ray diffraction</subject><subject>X-rays</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kU9rHCEYh6W00G2SL9CT0FMPk_hnxtHjkrbpQqDQNGcxzutimNWtOtB8-7zbKZRcgoqiz-Or_Aj5yNklZ2y8qpzpQXZM4NDG8E69IRs-jLLrNZNvyYYxITrRK_6efKj1kTE2jIJvSPgCDcohJtdiTjQHOjvccDOtrbiYKPZdunHbevdA3Tznp0pdmmhslUII4BtFDdnFt-WknQ7zsUWP62PJRygtQj0n74KbK1z8m8_I_bevv66_d7c_bnbX29vO91K1zngjglNO-4dJ-gkGITlAmHopVB_CpLwejJej4WycJg9-CM5xyUepjdDCyTPyab0XS_9eoDb7mJeSsKQVWqteMW4MUpcrtXcz2JhCxr96bBMcos8JQsT97ThyrXshJAqfXwjINPjT9m6p1e7ufr5kxcr6kmstEOyxxIMrT5YzewrLrmFZDMv-DcsqlOQqVYTTHsr_d79iPQNtZZea</recordid><startdate>20231101</startdate><enddate>20231101</enddate><creator>González-Morales, M. A.</creator><creator>Villa-Martínez, G.</creator><creator>Cruz-Bueno, J. J.</creator><creator>Ramírez-López, M.</creator><creator>Camacho-Reynoso, M.</creator><creator>Rodríguez-Fragoso, P.</creator><creator>Mendoza-Álvarez, J. G.</creator><creator>Casallas-Moreno, Y. L.</creator><creator>Herrera-Pérez, J. L.</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><orcidid>https://orcid.org/0000-0003-2782-6454</orcidid><orcidid>https://orcid.org/0000-0003-4131-2345</orcidid></search><sort><creationdate>20231101</creationdate><title>Determination of lateral strain in InGaAsSb alloys and its effect on structural and optical properties</title><author>González-Morales, M. A. ; Villa-Martínez, G. ; Cruz-Bueno, J. J. ; Ramírez-López, M. ; Camacho-Reynoso, M. ; Rodríguez-Fragoso, P. ; Mendoza-Álvarez, J. G. ; Casallas-Moreno, Y. L. ; Herrera-Pérez, J. 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A.</creatorcontrib><creatorcontrib>Villa-Martínez, G.</creatorcontrib><creatorcontrib>Cruz-Bueno, J. J.</creatorcontrib><creatorcontrib>Ramírez-López, M.</creatorcontrib><creatorcontrib>Camacho-Reynoso, M.</creatorcontrib><creatorcontrib>Rodríguez-Fragoso, P.</creatorcontrib><creatorcontrib>Mendoza-Álvarez, J. G.</creatorcontrib><creatorcontrib>Casallas-Moreno, Y. L.</creatorcontrib><creatorcontrib>Herrera-Pérez, J. L.</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>CrossRef</collection><collection>Gale In Context: Science</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><jtitle>Journal of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>González-Morales, M. A.</au><au>Villa-Martínez, G.</au><au>Cruz-Bueno, J. J.</au><au>Ramírez-López, M.</au><au>Camacho-Reynoso, M.</au><au>Rodríguez-Fragoso, P.</au><au>Mendoza-Álvarez, J. G.</au><au>Casallas-Moreno, Y. L.</au><au>Herrera-Pérez, J. L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Determination of lateral strain in InGaAsSb alloys and its effect on structural and optical properties</atitle><jtitle>Journal of materials science</jtitle><stitle>J Mater Sci</stitle><date>2023-11-01</date><risdate>2023</risdate><volume>58</volume><issue>41</issue><spage>16172</spage><epage>16183</epage><pages>16172-16183</pages><issn>0022-2461</issn><eissn>1573-4803</eissn><abstract>In
x
Ga
1
-
x
As
y
Sb
1
-
y
epilayers with a fixed In content of
x
= 0.145 were grown on GaSb(100) substrates using liquid-phase epitaxy (LPE). The lattice mismatch between the quaternary epilayers and substrates was analyzed for different As contents (
y
) by X-ray
ω
-2
θ
. Epilayers with As content between
y
= 0.120 and
y
= 0.124 exhibited a positive lattice mismatch, leading to compressive strain. These samples showed a high crystalline quality and flat surfaces, as confirmed by high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). Quaternary alloys with As content between
y
= 0.133 and
y
= 0.141 displayed a negative lattice mismatch, resulting in tensile strain. Structural defects in these samples were evidenced by HR-XRD and on AFM micrographs. Raman measurements also revealed that lateral strain has a direct impact on the intensities of the LO-like, phonon–plasmon and disorder-activated longitudinal acoustic modes. For all In
x
Ga
1
-
x
As
y
Sb
1
-
y
films, photoluminescence (PL) spectra showed a bound exciton (BE) transition, with additional features observed in samples under tensile strain, indicating the involvement of native defect centers and donor–acceptor pairs. This study provides new insights into the effect of lateral strain on the crystalline and surface quality, and optical properties of quaternary alloys, relevant for novel optoelectronic applications.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10853-023-08991-6</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0003-2782-6454</orcidid><orcidid>https://orcid.org/0000-0003-4131-2345</orcidid><oa>free_for_read</oa></addata></record> |
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| language | eng |
| recordid | cdi_proquest_journals_2886460199 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Alloys Atomic force microscopy Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics Compressive properties Crystal defects Crystallography and Scattering Methods Diffraction Electronic Materials Epitaxial growth Epitaxy Excitons Flat surfaces Force and energy Lattice vibration Liquid phase epitaxy Liquid phases Materials Science Optical properties Optoelectronics Photoluminescence Photomicrographs Polymer Sciences Quaternary alloys Solid Mechanics Specialty metals industry Substrates Surface properties Tensile strain X-ray diffraction X-rays |
| title | Determination of lateral strain in InGaAsSb alloys and its effect on structural and optical properties |
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