Impact of Nanosheet Thickness on Performance and Reliability of Polycrystalline-Silicon Thin-Film Transistors With Double-Gate Operation

In this work, the polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with double gates and nanosheet (NSH) channel structures were fabricated to investigate the impact of NSH channel thickness (t Si ) ranging from 15 nm to 2 nm on device performance and reliability. Thinning t Si from 15...

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Veröffentlicht in:	IEEE transactions on nanotechnology 2023, Vol.22, p.740-746
Hauptverfasser:	Ma, William Cheng-Yu, Su, Chun-Jung, Kao, Kuo-Hsing, Guo, Jing-Qiang, Wu, Cheng-Jun, Wu, Po-Ying, Hung, Jia-Yuan
Format:	Artikel
Sprache:	eng
Schlagworte:	double gate Electric fields Electron transport Grain size Integrated circuit reliability Logic gates nanosheet channel Nanosheets Polycrystals Polysilicon Quantum confinement reliability Reliability aspects Semiconductor devices Silicon Silicon films Stress Thickness Thin film transistors Thin-film transistor Thinning Threshold voltage Transistors
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