Methods of Charge-Carrier Mobility Measurements in Structures Based on High-Resistivity Gallium Arsenide with Deep Centers
One of the most important parameters determining the efficiency of X-ray sensors is the μ∙τ product, where μ is the charge-carrier mobility and τ is the carrier lifetime. This paper presents results of measurements of the charge-carrier mobility in high-resistivity (HR) GaAs:Cr sensors using two met...
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| Veröffentlicht in: | Russian physics journal 2023-10, Vol.66 (6), p.626-631 |
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| creator | Chsherbakov, I. D. Shaimerdenova, L. K. Shemeryankina, A. V. Skakunov, M. S. Tolbanov, O. P. Tyazhev, A. V. Zarubin, A. N. Trofimov, M. S. |
| description | One of the most important parameters determining the efficiency of X-ray sensors is the μ∙τ product, where μ is the charge-carrier mobility and τ is the carrier lifetime. This paper presents results of measurements of the charge-carrier mobility in high-resistivity (HR) GaAs:Cr sensors using two methods: the laser-induced transient-current technique (LTCT) and the Hall measurements. It has been found that the concentration of holes in the HR GaAs:Cr material exceeds that of electrons, whereas the value of the electron drift mobility is in the range 4000–4300 cm
2
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| doi_str_mv | 10.1007/s11182-023-02985-2 |
| format | Article |
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2
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D.</creatorcontrib><creatorcontrib>Shaimerdenova, L. K.</creatorcontrib><creatorcontrib>Shemeryankina, A. V.</creatorcontrib><creatorcontrib>Skakunov, M. S.</creatorcontrib><creatorcontrib>Tolbanov, O. P.</creatorcontrib><creatorcontrib>Tyazhev, A. V.</creatorcontrib><creatorcontrib>Zarubin, A. N.</creatorcontrib><creatorcontrib>Trofimov, M. S.</creatorcontrib><collection>CrossRef</collection><jtitle>Russian physics journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chsherbakov, I. D.</au><au>Shaimerdenova, L. K.</au><au>Shemeryankina, A. V.</au><au>Skakunov, M. S.</au><au>Tolbanov, O. P.</au><au>Tyazhev, A. V.</au><au>Zarubin, A. N.</au><au>Trofimov, M. 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It has been found that the concentration of holes in the HR GaAs:Cr material exceeds that of electrons, whereas the value of the electron drift mobility is in the range 4000–4300 cm
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| subjects | Carrier lifetime Carrier mobility Condensed Matter Physics Current carriers Electric properties Electrical resistivity Electrons Gallium arsenide Hadrons Heavy Ions Lasers Mathematical and Computational Physics Measurement Methods Nuclear Physics Optical Devices Optics Photonics Physics Physics and Astronomy Physics of Semiconductors and Dielectrics Radiation Sensors Theoretical Transient current |
| title | Methods of Charge-Carrier Mobility Measurements in Structures Based on High-Resistivity Gallium Arsenide with Deep Centers |
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