193 nm laser annealing on p-GaN with enhanced hole concentration and wall-plug-efficiency in deep ultraviolet LED

The high acceptor ionization energy and, thus, low carrier concentration in p-type III-nitride have widely been recognized as the bottleneck preventing the development of high-efficiency light-emitting-diodes (LEDs). In this contribution, the influences of 193 nm pulsed laser annealing on the struct...

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Veröffentlicht in:	Applied physics letters 2023-10, Vol.123 (18)
Hauptverfasser:	Xu, Chenglong, Liu, Kunzi, Yu, Zhehan, Zhao, Zihui, Chen, Cong, Gao, Jianghong, Yang, Zhenhai, Ye, Jichun, Guo, Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Carrier density Fluence Gallium nitrides Laser beam annealing Light emitting diodes Optical properties Optoelectronic devices Plugs Pulsed lasers Quantum efficiency
Online-Zugang:	Volltext
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