Impedance spectroscopy data for 2D biintercalate clathrate InSe< + >

Using the intercalation technology, a biintercalated clathrate InSe was formed in which the guest components are placed in separate layers and alternately stage-ordered. Confirmation of this was obtained based on analysis of X-ray diffraction spectra for the initial single crystal and the single crystal intercalated with a ferroelectric and biintercalant. Due to weak interactions between the semiconductor matrix and guest components, periodic potential barriers of different natures (ferroelectric and ferromagnetic) were formed. This allowed observing such phenomena as quantum capacitance and negative capacitance. By the formation of magnetically active nano-centers through which it was possible to achieve the conditions of resonance tunneling, which as a consequence leads to the creation of EMF under normal conditions and under the influence of a constant magnetic field. This biintercalant clathrate acquires practical appeal for the manufacture of high-Q radio-frequency capacitors in terms of anomalous increase in dielectric constant in the megahertz range ( ε max ≈ 5.5·10 4 ), simultaneously accepting the value of the dielectric loss tangent less than 1. At the same time, it also shows a negative magneto-capacitive effect was also obtained, which can be used for the construction of highly sensitive magnetic field sensors of capacitive type. Due to the ferroelectric guest component, this clathrate exhibits charge storage properties that can be used to create non-volatile memory so-called memristors.